公开(公告)号：US20170287864A1

公开(公告)日：2017-10-05

申请号：US15627314

申请日：2017-06-19

Applicant: Micron Technology, Inc.

Inventor： Aibin Yu ,  Wei Zhou ,  Zhaohui Ma

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L24/14 ,  H01L21/76898 ,  H01L23/00 ,  H01L23/481 ,  H01L24/00 ,  H01L24/09 ,  H01L24/81 ,  H01L2224/1701 ,  H01L2924/01029

Abstract: A bond pad with micro-protrusions for direct metallic bonding. In one embodiment, a semiconductor device comprises a semiconductor substrate, a through-silicon via (TSV) extending through the semiconductor substrate, and a copper pad electrically connected to the TSV and having a coupling side. The semiconductor device further includes a copper element that projects away from the coupling side of the copper pad. In another embodiment, a bonded semiconductor assembly comprises a first semiconductor substrate with a first TSV and a first copper pad electrically coupled to the first TSV, wherein the first copper pad has a first coupling side. The bonded semiconductor assembly further comprises a second semiconductor substrate, opposite to the first semiconductor substrate, the second semiconductor substrate comprising a second copper pad having a second coupling side. A plurality of copper connecting elements extend between the first and second coupling sides of the first and second copper pads.

公开(公告)号：US09349670B2

公开(公告)日：2016-05-24

申请号：US14451192

申请日：2014-08-04

Applicant: Micron Technology, Inc.

Inventor： Wei Zhou ,  Zhaohui Ma ,  Aibin Yu

IPC: H01L23/02 ,  H01L23/12 ,  H01L23/373 ,  H01L25/065 ,  H01L23/367 ,  H01L25/00 ,  H01L21/48

CPC classification number: H01L21/4882 ,  H01L21/4878 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3738 ,  H01L23/4334 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/17519 ,  H01L2224/29191 ,  H01L2224/293 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/83104 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/15787

Abstract: Semiconductor die assemblies with heat sinks are disclosed herein. In one embodiment, a semiconductor die assembly includes a stack of semiconductor dies and a mold material surrounding at least a portion of the stack of semiconductor dies. A heat sink is disposed on the stack of semiconductor dies and adjacent the mold material. The heat sink includes an exposed surface and a plurality of heat transfer features along the exposed surface that are configured to increase an exposed surface area compared to a planar surface.

Abstract translation: 本文公开了具有散热器的半导体模具组件。 在一个实施例中，半导体管芯组件包括一叠半导体管芯和围绕至少一部分半导体管芯的模具材料。 散热器设置在半导体管芯的叠层上并与模具材料相邻。 散热器包括暴露表面和沿着暴露表面的多个传热特征，其被配置为与平坦表面相比增加暴露的表面积。