MEMORY AUTHENTICATION
    34.
    发明申请

    公开(公告)号:US20220027066A1

    公开(公告)日:2022-01-27

    申请号:US17497212

    申请日:2021-10-08

    Abstract: Apparatuses and methods related to memory authentication. Memory devices can be authenticated utilizing authentication codes. An authentication code can be generated based on information stored in a fuse array of the memory device. The authentication code can be stored in the memory device. The stored authentication code can be compared to a captured authentication code based on fuse array information broadcast to memory components of the memory device. The authenticity of the memory device can be determined based on the comparison and can result in placing the memory device in an unlocked state.

    Semiconductor packages and associated methods with antennas and EMI isolation shields

    公开(公告)号:US11177222B2

    公开(公告)日:2021-11-16

    申请号:US16524989

    申请日:2019-07-29

    Abstract: Semiconductor devices with antennas and electromagnetic interference (EMI) shielding, and associated systems and methods, are described herein. In one embodiment, a semiconductor device includes a semiconductor die coupled to a package substrate. An antenna structure is disposed over and/or adjacent the semiconductor die. An electromagnetic interference (EMI) shield is disposed between the semiconductor die and the antenna structure to shield at least the semiconductor die from electromagnetic radiation generated by the antenna structure and/or to shield the antenna structure from interference generated by the semiconductor die. A first dielectric material and/or a thermal interface material can be positioned between the semiconductor die and the EMI shield, and a second dielectric material can be positioned between the EMI shield and the antenna structure. In some embodiments, the semiconductor device includes a package molding over at least a portion of the antenna, the EMI shield, and/or the second dielectric material.

    RESPONDING TO CHANGES IN AVAILABLE POWER SUPPLY

    公开(公告)号:US20210065820A1

    公开(公告)日:2021-03-04

    申请号:US16553241

    申请日:2019-08-28

    Abstract: Methods of operating a memory having a first pool of memory cells having a first storage density and a second pool of memory cells having a second storage density greater than the first storage density, as well as apparatus configured to perform similar methods, might include determining whether a value of an indication of available power is less than a threshold, and, in response to determining that the value of the indication of available power is less than the threshold, increasing a size of the first pool of memory cells, limiting write operations of the memory to the first pool of memory cells, and postponing movement of data from the first pool of memory cells to the second pool of memory cells.

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