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公开(公告)号:US20190066775A1
公开(公告)日:2019-02-28
申请号:US15689989
申请日:2017-08-29
Applicant: Micron Technology, Inc.
Inventor: Sebastien Andre Jean , Ting Luo
CPC classification number: G11C11/5628 , G11C16/10 , G11C16/3418 , G11C16/3459 , G11C2211/5641
Abstract: Devices and techniques to reduce corruption of preloaded data during assembly are disclosed herein. A memory device can perform operations to store received data, including preloaded data, up to a threshold amount on a memory array in a reflow-protection mode, and to transition from the reflow-protection mode to a normal-operation mode after the initial data exceeds the threshold amount.
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公开(公告)号:US20190065085A1
公开(公告)日:2019-02-28
申请号:US15692299
申请日:2017-08-31
Applicant: Micron Technology, Inc.
Inventor: Sebastien Andre Jean
Abstract: Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.
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公开(公告)号:US10163498B1
公开(公告)日:2018-12-25
申请号:US15689989
申请日:2017-08-29
Applicant: Micron Technology, Inc.
Inventor: Sebastien Andre Jean , Ting Luo
CPC classification number: G11C11/5628 , G11C16/10 , G11C16/3418 , G11C16/3459 , G11C2211/5641
Abstract: Devices and techniques to reduce corruption of preloaded data during assembly are disclosed herein. A memory device can perform operations to store received data, including preloaded data, up to a threshold amount on a memory array in a reflow-protection mode, and to transition from the reflow-protection mode to a normal-operation mode after the initial data exceeds the threshold amount.
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公开(公告)号:US11726919B2
公开(公告)日:2023-08-15
申请号:US17471538
申请日:2021-09-10
Applicant: Micron Technology, Inc.
Inventor: Sebastien Andre Jean
IPC: G06F12/08 , G06F12/0871 , G06F9/54 , G06F9/50 , G06F12/02
CPC classification number: G06F12/0871 , G06F9/5016 , G06F9/544 , G06F12/0246 , G06F2212/1021 , G06F2212/222 , G06F2212/502 , G06F2212/7201
Abstract: Disclosed in some examples are methods, systems, and machine readable mediums that dynamically adjust the size of an L2P cache in a memory device in response to observed operational conditions. The L2P cache may borrow memory space from a donor memory location, such as a read or write buffer. For example, if the system notices a high amount of read requests, the system may increase the size of the L2P cache at the expense of the write buffer (which may be decreased). Likewise, if the system notices a high amount of write requests, the system may increase the size of the L2P cache at the expense of the read buffer (which may be decreased).
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公开(公告)号:US11687340B2
公开(公告)日:2023-06-27
申请号:US17129203
申请日:2020-12-21
Applicant: Micron Technology, Inc.
Inventor: Sebastien Andre Jean
CPC classification number: G06F9/30192 , G06F9/3004 , G06F13/1642 , G06F13/1668 , G06F13/18 , G11C16/04
Abstract: Devices and techniques for implementing quality-of-service (QoS) parameters in a managed memory device having a number of memory dies are disclosed herein.
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公开(公告)号:US20220357863A1
公开(公告)日:2022-11-10
申请号:US17870320
申请日:2022-07-21
Applicant: Micron Technology, Inc.
Inventor: Carla L. Christensen , Jianmin Huang , Sebastien Andre Jean , Kulachet Tanpairoj
IPC: G06F3/06 , G06F12/0893 , G06F12/02
Abstract: Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The configuration (e.g., the size and position) of the SLC cache may have an impact on power consumption, speed, and other performance of the memory device. An operating system of an electronic device to which the memory device is installed may wish to achieve different performance of the device based upon certain conditions detectable by the operating system. In this way, the performance of the memory device can be customized by the operating system through adjustments of the performance characteristics of the SLC cache.
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公开(公告)号:US20220113880A1
公开(公告)日:2022-04-14
申请号:US17558224
申请日:2021-12-21
Applicant: Micron Technology, Inc.
Inventor: Sebastien Andre Jean
Abstract: Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.
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公开(公告)号:US11288016B2
公开(公告)日:2022-03-29
申请号:US17084289
申请日:2020-10-29
Applicant: Micron Technology, Inc.
Inventor: Sebastien Andre Jean
Abstract: Apparatus and methods are disclosed, including providing available data operations for the storage system processor to a host processor, identifying data operations to be performed by the storage system processor, and assigning identified data operations to the storage system processor to reduce bus traffic between the host processor and the storage system processor, to improve host processor performance, and to reduce energy use by the host processor.
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公开(公告)号:US11222692B2
公开(公告)日:2022-01-11
申请号:US16915537
申请日:2020-06-29
Applicant: Micron Technology, Inc.
Inventor: Sebastien Andre Jean , Ting Luo
Abstract: Devices and techniques to reduce corruption of received data during assembly are disclosed herein. A memory device can perform operations to store received data, including preloaded data, in a first mode until the received data exceeds a threshold amount, and to transition from the first mode to a second mode after the received data exceeds the threshold amount.
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公开(公告)号:US20210342099A1
公开(公告)日:2021-11-04
申请号:US17373239
申请日:2021-07-12
Applicant: Micron Technology, Inc.
Inventor: Sebastien Andre Jean
Abstract: Apparatus and methods are disclosed, including enabling communication between a memory controller and multiple memory devices of a storage system using a storage-system interface, the multiple memory devices each comprising a device controller and a group of non-volatile memory cells, and compressing data using at least one of the device controllers prior to transfer over the storage-system interface to improve an effective internal data transmission speed of the storage system.
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