摘要:
An object of the present invention is to suppress measurement errors caused by the fact that the shrink amount due to scan of an electron beam differs pattern by pattern. To accomplish this object, according to the invention, functions indicative of a process of change of pattern dimension when the electron beam is irradiated on a sample are prepared in respect of the kinds of sample patterns, and dimension values of a particular pattern measured by scanning the electron beam on the particular pattern are fitted to a function prepared for the particular pattern to calculate a dimension of the particular pattern before it changes.
摘要:
A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.
摘要:
A width-measurement method of reducing or eliminating an error in measurement of a width of an object on a sample resulting from the dimension of the beam diameter, wherein a width-measured value of the object to be width-measured which has been obtained on the basis of a secondary signal obtained from secondary particles emitted from the sample having thereon the object to be width-measured is corrected with a value with respect to a dimension value of a beam diameter.
摘要:
A method of measuring length with a scanning type electron microscope (SEM) includes the steps of: performing length measurement with the SEM of an already know pattern provided in advance in a predetermined region on a specimen (S 101˜S 104); obtaining a magnification correction coefficient through comparison of the length measurement result with the designed value of the already known pattern (S 105, S 108); and determining a true size by multiplying a measured length value of a measurement point performed by the SEM by the obtained magnification correction coefficient (S 109˜S 111), thereby, a method which is free from a length measurement error regardless to the constitution of the specimen and the film type thereof.
摘要:
The inspection apparatus uses a particle beam and has a high throughput by obtaining a characteristic frequency corresponding to the characteristic quantity of focusing-shift from a Fourier spectrum of a sample image using a focusing-shift evaluator. A beam blur profile is produced corresponding to the characteristic frequency in a beam blur profile generator. A component of the beam-blur profile is removed from the sample image stored in one dimensional image memory using a de-convolution operator. A dimensional measurement is performed in a critical dimension evaluator for an obtained sample image. Since time spent for focus adjustment using particle beam scanning is obviated, it is possible to reduce the inspection time for a dimension and an appearance abnormality of a semiconductor element.
摘要:
An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A cubic model is assumed, the cubic model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified cubic model.
摘要:
A charged particle beam apparatus includes a charged particle beam generating system for causing a charged particle source to generate a charged particle beam. A focusing system focuses the charged particle beam onto a sample. A deflecting system causes the focused charged particle beam to scan the surface of the sample. An evacuating system evacuates a space through which the charged particle beam passes. A detector detects information obtained by irradiating the charged particle beam onto the sample. An image display system displays as an image the status of distribution of the information over the sample surface based on a detection signal forwarded from the detector. The focusing system is entirely constituted by an electrostatic lens containing a plurality of lens electrodes, one of the lens electrodes being a final electrode located closest to the sample. All of the lens electrodes except for the final electrode are supplied with positive voltages as opposed to a negative voltage to the final electrode when the charged particle beam is negatively charged (e.g., electron beam). All of the lens electrodes except for the final electrode are supplied with negative voltages as opposed to a positive voltage to the final electrode when the charged electron beam is positively charged (e.g., positive ion beam). The deflecting system is so constructed as to deflect the charged particle beam within the inner space of the plurality of lens electrodes excluding the final electrode.
摘要:
Improvements in a charged particle beam apparatus are contemplated and especially a column structure incorporating a superhigh vacuum evacuation system is provided which is reduced in size and weight and has high performance. In order to evacuate surrounding space of a charged particle source to superhigh vacuum, ion pumps are built in a vacuum enclosure of a column. Each ion pump includes a magnet unit 15, a yoke and an electrode, and the magnet unit per se is built in the vacuum enclosure. A charged particle beam focusing optics for focusing and deflecting a charged particle beam from the charged particle beam source is arranged in a space which is defined interiorly of the yoke. The column structure can be reduced in size and weight and a charged particle beam apparatus having high performance can be obtained.
摘要:
A charged particle beam apparatus includes a charged particle beam generating system for causing a charged particle source to generate a charged particle beam. A focusing system focuses the charged particle beam onto a sample. A deflecting system causes the focused charged particle beam to scan the surface of the sample. An evacuating system evacuates a space through which the charged particle beam passes. A detector detects information obtained by irradiating the charged particle beam onto the sample. An image display system displays as an image the status of distribution of the information over the sample surface based on a detection signal forwarded from the detector. The focusing system is entirely constituted by an electrostatic lens containing a plurality of lens electrodes, one of the lens electrodes being a final electrode located closest to the sample. All of the lens electrodes except for the final electrode are supplied with positive voltages as opposed to a negative voltage to the final electrode when the charged particle beam is negatively charged (e.g., electron beam). All of the lens electrodes except for the final electrode are supplied with negative voltages as opposed to a positive voltage to the final electrode when the charged electron beam is positively charged (e.g., positive ion beam). The deflecting system is so constructed as to deflect the charged particle beam within the inner space of the plurality of lens electrodes excluding the final electrode.
摘要:
According to a charged particle beam apparatus of this invention, an inspection position on a test sample (wafer coordinate system) is converted to a setting position of an inspection mechanism (stage coordinate system (polar coordinate system)), a rotating arm (102,1012) and a rotating stage (103,1011) being rotated to be moved for the inspection position on the test sample.In this case, a plurality of inspection devices are arranged over a locus that is drawn by the center of the rotating stage according to the rotation of the rotating arm. A function for calculating errors (e.g., center shift of the rotating stage) and compensating for the errors is provided, by which the precision of inspection is improved in a charged particle beam apparatus equipped with a biaxial rotating stage mechanism. With this configuration, a charged particle beam apparatus which is small-sized and capable of easy stage control can be realized.