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公开(公告)号：US11411586B2
公开(公告)日：2022-08-09
申请号：US17189291
申请日：2021-03-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hidetaka Takahashi , Satoshi Goto , Yoshiki Yasutomo , Daerok Oh , Yuuto Aoki , Yoshihiro Daimon , Naoya Matsumoto
Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier includes: an input terminal; an output terminal; first and second amplifying elements disposed parallel to the input terminal; and an output transformer connected between the output terminal and output terminals of the first and second amplifying elements. The PA control circuit is disposed on the second principal surface, and the first and second amplifying elements are both disposed on the first principal surface.
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公开(公告)号：US10985712B2
公开(公告)日：2021-04-20
申请号：US16351916
申请日：2019-03-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Arayashiki , Satoshi Goto , Satoshi Tanaka , Yasuhisa Yamamoto
Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
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公开(公告)号：US10027291B2
公开(公告)日：2018-07-17
申请号：US15430890
申请日：2017-02-13
Applicant: MURATA MANUFACTURING CO., LTD.
Inventor： Satoshi Goto
Abstract: A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.
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公开(公告)号：US12243836B2
公开(公告)日：2025-03-04
申请号：US17548679
申请日：2021-12-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shunji Yoshimi , Satoshi Goto , Mikiko Fukasawa
IPC: H03F3/04 , H01L23/498 , H01L23/66 , H01L25/065 , H03F1/02 , H03F3/14 , H03F3/19 , H03F1/56
Abstract: In a semiconductor device, a first member having a first surface includes a plurality of circuit blocks disposed in an inner region of the first surface when the first surface is viewed in plan. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of first transistors that are connected in parallel to each other and form a first amplifier circuit. A conductive protrusion protrudes from the second member on an opposite side to the first member. The first transistors are disposed in a region not overlapping any of the circuit blocks in the first member in a plan view.
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公开(公告)号：US11569787B2
公开(公告)日：2023-01-31
申请号：US17211072
申请日：2021-03-24
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Arayashiki , Satoshi Goto , Satoshi Tanaka , Yasuhisa Yamamoto
Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
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Patent Agency Ranking
公开(公告)号：US11489547B2
公开(公告)日：2022-11-01
申请号：US17066492
申请日：2020-10-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shigeru Tsuchida , Daerok Oh , Takahiro Katamata , Satoshi Goto , Mitsunori Samata , Yoshiki Yasutomo
Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.
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公开(公告)号：US11190154B2
公开(公告)日：2021-11-30
申请号：US16898907
申请日：2020-06-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yuri Honda , Satoshi Goto , Fumio Harima
Abstract: A power amplifier circuit includes a power splitter, a first amplifier configured to output a first amplified signal from a first output terminal, and a second amplifier configured to output a second amplified signal from a second output terminal. The power amplifier circuit further includes a first termination circuit connected between the first output terminal and the second output terminal, a first transmission line, a second transmission line, a second termination circuit connected between another end of the first transmission line and another end of the second transmission line, and a power combiner.
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公开(公告)号：US10666201B2
公开(公告)日：2020-05-26
申请号：US16154861
申请日：2018-10-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hisanori Namie , Satoshi Goto , Satoshi Tanaka
Abstract: A power amplifier module includes a first power amplifier circuit configured to output a first amplified signal obtained by amplifying an input signal; a second power amplifier circuit configured to output a second amplified signal obtained by amplifying the first amplified signal; and a matching network connected between the first power amplifier circuit and the second power amplifier circuit. The matching network includes a first capacitor connected in series between the first power amplifier circuit and the second power amplifier circuit, a second capacitor connected in series between the first capacitor and the second power amplifier circuit, a first inductor connected between a point between the first capacitor and the second capacitor and a ground, and a second inductor connected in series between the first power amplifier circuit and the first capacitor.
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公开(公告)号：US20170214375A1
公开(公告)日：2017-07-27
申请号：US15482055
申请日：2017-04-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Arayashiki , Satoshi Goto
CPC classification number: H03G3/3042 , H03F1/0205 , H03F3/19 , H03F3/191 , H03F3/21 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/21 , H03F2200/324 , H03F2200/451 , H03F2203/21181 , H03G1/0088
Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
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公开(公告)号：US20160315594A1
公开(公告)日：2016-10-27
申请号：US15092362
申请日：2016-04-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Arayashiki , Satoshi Goto
CPC classification number: H03G3/3042 , H03F1/0205 , H03F3/19 , H03F3/191 , H03F3/21 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/21 , H03F2200/324 , H03F2200/451 , H03F2203/21181 , H03G1/0088
Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
Abstract translation: 提供了一种功率放大模块，其包括：第一晶体管，输入到其基极的第一信号; 第二晶体管，第一信号被输入到其基极，其集电极连接到第一晶体管的集电极; 第一电阻器，第一偏置电流被提供给其一端，另一端连接到第一晶体管的基极; 第二电阻器，其一端连接到第一电阻器的一端，另一端连接到第二晶体管的基极; 和第三电阻器，第二偏置电流被提供给其一端，另一端连接到第二晶体管的基极。
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