公开(公告)号：US20080076266A1

公开(公告)日：2008-03-27

申请号：US11525147

申请日：2006-09-21

申请人： Atsuki Fukazawa ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Nobuo Matsuki

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3105 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612

摘要： A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: introducing into a reaction chamber a source gas of a silicon-containing hydrocarbon compound comprising in its molecule at least one Si—O bond and at least one bond selected from the group consisting of a Si—Si bond, Si—N bond, and Si—H bond; introducing into the reaction chamber an additive gas constituted by C, H, and optionally O; controlling a susceptor at a temperature of −50° C. to 50° C.; forming by plasma reaction an insulation film constituted by Si, O, H, and optionally N on an irregular surface of a substrate at a deposition rate of 100 nm/min or less; and heat-treating the substrate with the insulation film, thereby increasing a density of the insulation film to more than 2.1 g/cm3 as a result of the heat treatment.

摘要翻译： 通过等离子体反应在半导体基板上形成绝缘膜的方法包括：在反应室中引入含有分子中的含硅烃化合物的源气体，所述含硅烃化合物的分子中含有至少一个Si-O键和至少一个选自 由Si-Si键，Si-N键和Si-H键组成的组; 将由C，H和任选的O构成的添加气体引入反应室; 在-50℃至50℃的温度下控制基座; 通过等离子体反应在100nm / min以下的沉积速率下在基板的不规则表面上形成由Si，O，H和任选的N构成的绝缘膜; 并且利用绝缘膜对衬底进行热处理，由此通过热处理将绝缘膜的密度提高到2.1g / cm 3以上。

公开(公告)号：US20060216433A1

公开(公告)日：2006-09-28

申请号：US11086598

申请日：2005-03-22

申请人： Atsuki Fukazawa ,  Kiyoto Itoh ,  Tsunayuki Kimura ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Kiyoto Itoh ,  Tsunayuki Kimura ,  Nobuo Matsuki

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01L21/31633 ,  C23C16/30 ,  C23C16/5096 ,  H01J37/32082 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122

摘要： A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper and lower electrodes by controlling a gas flow ratio, generating a plasma by applying RF power to the space between the upper and lower electrodes in a state in which an interval between the upper electrode and the substrate is narrower in the vicinity of a center of the substrate than that in the vicinity of its periphery, and forming a film having a low dielectric constant on the substrate at a deposition rate of less than approx. 790 nm/min by controlling a flow rate of the process gas.

公开(公告)号：US20050042884A1

公开(公告)日：2005-02-24

申请号：US10644195

申请日：2003-08-20

申请人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

发明人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

IPC分类号： H01L21/312 ,  H01L21/205 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

摘要翻译： 通过引入包含（i）包含含有至少一个乙烯基的含硅烃化合物的源气体（Si-乙烯基化合物））的反应气体，通过等离子体聚合在基板上形成含硅绝缘膜，和（ii） 添加气体，放入放置基板的反应室中; 并向气体施加射频电力以引起等离子体聚合，由此在基板上沉积绝缘膜。

公开(公告)号：US06653719B2

公开(公告)日：2003-11-25

申请号：US10253665

申请日：2002-09-24

申请人： Nobuo Matsuki

发明人： Nobuo Matsuki

IPC分类号： H01L2358

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10S257/914 ,  C08G77/00 ,  H01L2924/00

摘要： A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has —SiR2O— repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&bgr;CxHy (&agr;, &bgr;, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

摘要翻译： 硅氧烷聚合物绝缘膜的介电常数为3.3以下，具有-SiR2O-重复结构单元。 硅氧烷聚合物在半导体衬底上具有介电常数，高热稳定性和高耐湿性。 硅氧烷聚合物通过直接蒸发由通式SialphaObeta C x H y（α，β，x和y为整数）表示的含硅烃化合物形成，然后将蒸发的化合物引入等离子体CVD装置的反应室。 通过减少反应气体的总流量来延长源气体的停留时间，以形成具有低介电常数的微孔多孔结构的硅氧烷聚合物膜。

公开(公告)号：US06432846B1

公开(公告)日：2002-08-13

申请号：US09691376

申请日：2000-10-18

申请人： Nobuo Matsuki

发明人： Nobuo Matsuki

IPC分类号： B05D306

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  C08G77/00

摘要： A method for forming a silicone polymer insulation film having low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is vaporizing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&bgr;CxHy (&agr;=3, &bgr;=3 or 4, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The next step is introducing additive gas into the reaction chamber. The residence time of the material gas is lengthened by reducing the total flow of the reaction gas, in such a way as to formed a silicone polymer film having a micropore porous structure with low relative dielectric constant.

摘要翻译： 在等离子体CVD装置上应用了在半导体衬底上形成具有低相对介电常数，高热稳定性和高耐湿性的有机硅聚合物绝缘膜的方法。 第一步是将由通式SialphaObetaCxHy（α= 3，β= 3或4，x和y为整数）表示的含硅烃化合物汽化，然后将汽化的化合物引入等离子体CVD装置的反应室 。 下一步是将添加气体引入反应室。 通过减少反应气体的总流量来延长材料气体的停留时间，以形成具有低相对介电常数的微孔多孔结构的硅氧烷聚合物膜。

公开(公告)号：US07781352B2

公开(公告)日：2010-08-24

申请号：US11759159

申请日：2007-06-06

申请人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Jeongseok Ha

发明人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Jeongseok Ha

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02326 ,  C23C16/34 ,  C23C16/345 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348

摘要： A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.

摘要翻译： 形成无机硅氮烷类电介质膜的方法包括：将由Si和H构成的气体以及由N和任选H构成的气体引入放置物体的反应室中; 将物体的温度控制在-50℃至50℃; 并通过等离子体反应沉积由含有无机硅氮烷键的Si，N和H构成的膜。

公开(公告)号：US07655577B2

公开(公告)日：2010-02-02

申请号：US11550930

申请日：2006-10-19

申请人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

发明人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

IPC分类号： H01L21/00

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

摘要翻译： 通过等离子体聚合在基板上形成含硅绝缘膜的方法包括：引入反应气体，该反应气体包含（i）包含含有至少一个乙烯基（Si-乙烯基化合物）的含硅烃环状化合物的源气体， 和（ii）添加气体，放入放置基板的反应室中; 并向气体施加射频电力以引起等离子体聚合，由此在基板上沉积绝缘膜。

公开(公告)号：US20090298257A1

公开(公告)日：2009-12-03

申请号：US12130522

申请日：2008-05-30

申请人： Woo Jin Lee ,  Atsuki Fukazawa ,  Nobuo Matsuki

发明人： Woo Jin Lee ,  Atsuki Fukazawa ,  Nobuo Matsuki

IPC分类号： H01L21/31

CPC分类号： H01L21/76229 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing.

摘要翻译： 在沟槽形成的硅衬底上形成器件隔离区并从中除去残留碳的方法包括提供由硅，碳，氮，氢，氧或其两种或多种的任何组合构成的可流动的绝缘材料; 通过在位于半导体衬底上的沟槽中使用可流动的绝缘材料形成薄的绝缘层，其中可流动的绝缘材料在富含硅和氮的条件下形成保形涂层，而在富含碳的条件下，可流动的，绝缘的 材料从沟槽的底部垂直生长; 并通过多步固化如O2热退火，臭氧UV固化，然后进行N2热退火，从可流动的绝缘材料中除去残留的碳沉积物。

公开(公告)号：US07622369B1

公开(公告)日：2009-11-24

申请号：US12130522

申请日：2008-05-30

申请人： Woo Jin Lee ,  Atsuki Fukazawa ,  Nobuo Matsuki

发明人： Woo Jin Lee ,  Atsuki Fukazawa ,  Nobuo Matsuki

IPC分类号： H01L21/76 ,  H01L21/36 ,  H01L21/20 ,  H01L21/205 ,  H01L21/469

CPC分类号： H01L21/76229 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing.

摘要翻译： 在沟槽形成的硅衬底上形成器件隔离区并从中除去残留碳的方法包括提供由硅，碳，氮，氢，氧或其两种或多种的任何组合构成的可流动的绝缘材料; 通过在位于半导体衬底上的沟槽中使用可流动的绝缘材料形成薄的绝缘层，其中可流动的绝缘材料在富含硅和氮的条件下形成保形涂层，而在富含碳的条件下，可流动的，绝缘的 材料从沟槽的底部垂直生长; 并通过多步固化如O2热退火，臭氧UV固化，然后进行N2热退火，从可流动的绝缘材料中除去残留的碳沉积物。

公开(公告)号：US20070009673A1

公开(公告)日：2007-01-11

申请号：US11175511

申请日：2005-07-06

申请人： Atsuki Fukazawa ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Nobuo Matsuki

IPC分类号： H05H1/24 ,  C08F2/46

CPC分类号： C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31058 ,  H01L21/3122

摘要： A method for forming a low-dielectric-constant thin film includes forming on a substrate placed on a susceptor a thin film having a dielectric constant of 2.7 or higher and a modulus of 5 GPa or less by plasma CVD using an organosilicon gas and an additive gas such as CnH2n+2O in the absence of oxidizing gas at a susceptor temperature of lower than 350° C.; and curing the thin film with UV irradiation, thereby decreasing the dielectric constant by at least 10% and increasing the modulus by at least 200%.

摘要翻译： 形成低介电常数薄膜的方法包括使用有机硅气体和添加剂在等离子体CVD上在放置在基座上的基板上形成介电常数为2.7以上且模量为5GPa以下的薄膜 在不存在氧化气体的条件下，在低于350℃的基座温度下，例如C n H 2n + 2 O 2的气体; 并通过UV照射固化该薄膜，从而将介电常数降低至少10％，并将模量提高至少200％。