公开(公告)号：US5747874A

公开(公告)日：1998-05-05

申请号：US529784

申请日：1995-09-18

申请人： Masaaki Seki ,  Michio Sono ,  Ichiro Yamaguchi ,  Kazuhiko Mitobe ,  Lim Cheang Hai ,  Koki Otake ,  Susumu Abe ,  Junichi Kasai ,  Masao Sakuma ,  Yoshimi Suzuki ,  Yasuhiro Shinma

发明人： Masaaki Seki ,  Michio Sono ,  Ichiro Yamaguchi ,  Kazuhiko Mitobe ,  Lim Cheang Hai ,  Koki Otake ,  Susumu Abe ,  Junichi Kasai ,  Masao Sakuma ,  Yoshimi Suzuki ,  Yasuhiro Shinma

IPC分类号： H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/10 ,  H01L23/02

CPC分类号： H01L23/49816 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49805 ,  H01L25/105 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/8547 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1094 ,  H01L23/5387 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19107

摘要： A semiconductor device includes a semiconductor element, a semiconductor device base member having an element mounting portion on which the semiconductor element is mounted, external connection terminals provided on the semiconductor device base member and electrically connected to the semiconductor element, and a resin sealing the semiconductor element. The semiconductor device base member includes a base part and lead parts supported by the base part. The lead parts are electrically connected to the external connection terminals. The semiconductor device base member has bent portions in which the lead parts are located on outer sides of the semiconductor device base member. The bent portions are located in edge portions of the semiconductor device base member.

摘要翻译： 半导体器件包括半导体元件，半导体器件基底元件，其具有安装有半导体元件的元件安装部分，设置在半导体器件基底元件上并与半导体元件电连接的外部连接端子，以及密封半导体元件的树脂 元件。 半导体器件基底部件包括基部和由基部支撑的引线部。 引线部分电连接到外部连接端子。 半导体器件基体具有弯曲部分，其中引线部分位于半导体器件基底部件的外侧。 弯曲部分位于半导体器件基底部件的边缘部分。

公开(公告)号：US5643831A

公开(公告)日：1997-07-01

申请号：US547532

申请日：1995-10-24

申请人： Masayuki Ochiai ,  Hidefumi Ueda ,  Michio Sono ,  Ichiro Yamaguchi ,  Kazuhiko Mitobe ,  Koki Otake ,  Junichi Kasai ,  Nobuo Kamehara ,  Yasuo Yamagishi ,  Masataka Mizukoshi ,  Yutaka Yamada ,  Susumu Abe

发明人： Masayuki Ochiai ,  Hidefumi Ueda ,  Michio Sono ,  Ichiro Yamaguchi ,  Kazuhiko Mitobe ,  Koki Otake ,  Junichi Kasai ,  Nobuo Kamehara ,  Yasuo Yamagishi ,  Masataka Mizukoshi ,  Yutaka Yamada ,  Susumu Abe

IPC分类号： B23K3/06 ,  H01L21/48 ,  H01L21/60 ,  H01L21/68 ,  H05K3/34 ,  H01L21/283

CPC分类号： H05K3/3484 ,  B23K3/0623 ,  H01L21/4853 ,  H01L21/6835 ,  H01L24/11 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K2201/10992 ,  H05K2203/0113 ,  H05K2203/016 ,  H05K2203/0338 ,  H05K2203/041 ,  H05K2203/1476 ,  H05K3/3463 ,  H05K3/3489

摘要： A method for fabricating a semiconductor device using a solder ball forming plate having cavities. The plate is made from a silicon plate having a flat surface in a crystallographic plane, and an orientation flat in a crystallographic plane. The cavities are formed on the flat surface of the plate by etching, using a mask having openings in the shape of rhombus arranged such that one side of the rhombus is generally parallel to the crystallographic plane. As a result, the cavities having wedge-shaped bottom are formed. The cavities are then filled with a solder paste and are heated to form solder balls in the cavities while the plate in an inclined position. The solder balls are then transferred from the plate to a semiconductor chip.

摘要翻译： 一种使用具有空腔的焊球形成板制造半导体器件的方法。 该板由具有<110>结晶平面中的平坦表面的硅板制成，并且在<1-11>晶面中平行取向。 通过蚀刻在板的平坦表面上形成空腔，使用具有菱形形状的开口的掩模，其布置成使得菱形的一侧大致平行于<1-11>晶面。 结果，形成了具有楔形底部的空腔。 然后用焊膏填充空腔，并在板中处于倾斜位置的同时加热以在空腔中形成焊球。 然后将焊球从板转移到半导体芯片。

公开(公告)号：US4917866A

公开(公告)日：1990-04-17

申请号：US269339

申请日：1988-11-10

申请人： Susumu Abe ,  Tadayoshi Ikai ,  Masahiro Ogawa

发明人： Susumu Abe ,  Tadayoshi Ikai ,  Masahiro Ogawa

IPC分类号： C01B31/36 ,  C30B29/62 ,  D01F9/08

CPC分类号： B82Y30/00 ,  C01B31/36 ,  C01P2004/10 ,  C01P2004/64

摘要： A process for producing silicon carbide short fibers comprises oxidizing metallic silicon powder in an oxidizing gas atmosphere into silicon monoxide in the form of ultrafine particles or gas, and carbonizing said silicon monoxide in a reducing gas atmosphere containing carbon at temperatures being lower than temperatures for producing powder and falling in a temperature range for causing a heterogenous core formation of silicon carbide, thereby producing silicon carbide short fibers. The process of the present invention is capable of mass-producing silicon carbide short fibers continuously in a short time.

摘要翻译： 一种生产碳化硅短纤维的方法包括将氧化气体气氛中的金属硅粉末以超细颗粒或气体的形式氧化成一氧化硅，并且在低于生产温度的温度下在含有碳的还原气氛中碳化所述一氧化硅 粉末并在用于引起碳化硅的异质芯形成的温度范围内下降，由此制造碳化硅短纤维。 本发明的方法能够在短时间内连续地大量生产碳化硅短纤维。

公开(公告)号：US4719095A

公开(公告)日：1988-01-12

申请号：US825571

申请日：1986-02-03

申请人： Susumu Abe ,  Masahiro Ogawa

发明人： Susumu Abe ,  Masahiro Ogawa

IPC分类号： C01B21/068 ,  C01B31/36 ,  C01B33/113

CPC分类号： B82Y30/00 ,  C01B21/068 ,  C01B31/36 ,  C01B33/113 ,  C01P2004/64

摘要： A process for producing silicon ceramic powder, which comprises, oxidizing metallic silicon powder in an oxidizing gas atmosphere into silicon monoxide in the form of ultrafine particles or gas, and reducing said silicon monoxide in a reducing gas atmosphere containing at least nitrogen or carbon, thereby producing silicon nitride, silicon carbide or mixtures thereof.

摘要翻译： 一种硅陶瓷粉末的制造方法，其特征在于，将氧化性气体气氛中的金属硅粉末以超微粒子或气体形式的一氧化硅氧化，并在至少含有氮或碳的还原性气体气氛中还原所述一氧化硅，由此 生产氮化硅，碳化硅或其混合物。