摘要:
A method for fabricating a semiconductor device using a solder ball forming plate having cavities. The plate is made from a silicon plate having a flat surface in a crystallographic plane, and an orientation flat in a crystallographic plane. The cavities are formed on the flat surface of the plate by etching, using a mask having openings in the shape of rhombus arranged such that one side of the rhombus is generally parallel to the crystallographic plane. As a result, the cavities having wedge-shaped bottom are formed. The cavities are then filled with a solder paste and are heated to form solder balls in the cavities while the plate in an inclined position. The solder balls are then transferred from the plate to a semiconductor chip.
摘要:
First and second ball forming plates are prepared. The cavities of the first plate and the cavities of the second plate 20 are filled with solder paste, respectively. The first plate and the second plate are placed in a facing relationship to each other and heated to form metal balls each of which corresponds to the total metal components of the solder paste in one cavity of the first plate and one cavity in the second plate. The metal balls are formed in the cavities of the lower plate 10. The metal balls are transferred from the cavities of the first plate to a device on which bumps are to be formed.
摘要:
A method for fabricating solder bumps onto a semiconductor chip. A solder ball forming member having a flat surface and a plurality of cavities arranged on the flat surface in a predetermined pattern is prepared. The cavities are then filled with a solder paste, and the solder ball forming member is heated to a temperature higher than the melting point of the solder so that the molten solder powder in the solder paste form solder balls due to surface tension. The semiconductor chip is then moved toward the solder ball forming member to transfer the heated solder balls from the solder ball forming member to the semiconductor chip.
摘要:
Disclosed is a process for forming a super-conducting film, which a multi-layer metal film (buffer film) is formed at a specific temperature on a ceramic substrate and a superconducting film is formed at a specific temperature on the multi-layer metal film. According to this process, a superconducting film having a high critical temperature can be formed over the ceramic substrate while controlling or suppressing the occurrence of a chemical reaction between the substrate and the superconducting film, and required superconducting performances can be manifested or exhibited.
摘要:
A superconducting circuit board is provided comprising a sintered alumina board containing more than 99% by weight of alumina and an interconnection pattern of an superconducting ceramics formed on the alumina board. Adhesion of the interconnection pattern to the alumina board is improved by an addition of Ti or Si coupling agent to a paste for forming the interconnection pattern. The use of copper powder in place of copper oxide powder as an ingredient forming a superconducting ceramics in the paste is advantageous for printing and obtaining a uniform superconducting ceramic pattern.
摘要:
Superconductors of the Bi-Pb-Sr-Ca-Cu-O system and Tl-Pb-Ba-Ca-Cu-O system having a high Tc phase (about 110K and about 125K, respectively, or more) at a high proportion are obtained by adding a calcium compound which forms CaO and a liquid phase at a temperature for firing the superconductors, e.g., Ca.sub.2 PbO.sub.x (x=3 or 4); or by starting form a composition represented by the formula: Bi.sub.2 Pb.sub.(n-1)/2 Sr.sub.2 Ca.sub.n Cu.sub.n+1 O.sub.b, or Tl.sub.2 Pb.sub.(n-1)/2 Ba.sub.2 Ca.sub.n Cu.sub.n+1 Ob where 2.ltoreq.n.ltoreq.10, 5.ltoreq.b.ltoreq.40.5, i.e., at a ratio of Ca:Pb=2:1.
摘要:
A method for producing a multilayer ceramic circuit board including the steps of forming a multilayer structure consisting of patterns of copper-based paste and glass-ceramic layers, the glass-ceramic layers consisting of a mixture of 10 percent to 75 percent by weight of .alpha.-alumina, 20 percent to 60 percent by weight of crystallizable or noncrystallizable glass which can be sintered at a temperature lower than the melting point of copper, and 5 percent to 70 percent by weight of quartz glass, based on the total weight of the glass-ceramic, blended with a binder containing a thermally depolymerizable resin; prefiring the multilayer structure in an inert atmosphere containing water vapor, the partial pressure of which is 0.005 to 0.3 atmosphere, at a temperature where the thermally depolymerizable resin is eliminated; and firing the multilayer structure in an inert atmosphere containing no water vapor at a temperature below the melting point of copper so as to sinter the glass-ceramic.
摘要:
A process for manufacturing a multi-layer glass ceramic substrate which includes the steps of forming green sheets containing ceramic powders and glass powders as main ingredients, laminating the green sheets, and firing the laminated green sheets to form a multi-layer glass ceramic substrate, wherein at least one green sheet containing porous glass powders as a part of the glass powders, is provided to control the shrinkage of the green sheets and prevent cracks or delamination. The preferred process includes the steps of forming a single layer by i) forming first green sheets containing ceramic powders, glass powders, hollow glass spheres and porous glass powders as main ingredients, ii) forming an interconnection layer on each of the first green sheets, and iii) laminating the first green sheets with the interconnection layer; sandwiching the signal layer between upper and lower green sheets containing ceramic powders and glass powders as main ingredients; and firing the sandwiched signal layer to form the multi-layer glass ceramic substrate.
摘要:
A process for producing a Bi-based perovskite superconducting film, comprising the steps of forming on a substrate a Pb-film, containing Bi-base material film comprising Bi, Pb, Sr, Ca and Cu in a Bi:Pb:Sr:Ca:Cu molar ratio of (1.9 to 2.1):(1.2 to 2.2, preferably 1.5 to 1.8):2:(1.9 to 2.2):(3 to 3.5) and sintering the Pb-containing Bi-base material film in an oxygen-containing atmosphere. The sintering step includes a main sintering period of 20 to 120 minutes, in which the temperature is raised from a first temperature to a second temperature, with the second temperature being in a range of 850.degree. to 860.degree. C., and the temperature rise in the main sintering period of 20 to 120 minutes being from 3.degree. to 10.degree. C.
摘要:
A process of producing a multiple-layer glass-ceramic circuit board having a copper conductor, comprising the steps of: forming throughholes in a glass-ceramic green sheet at sites where via-contacts will be formed; filling the throughholes with a powder mixture of a copper powder blended with a ceramic powder, the copper powder and the ceramic powder having a powder particle size providing a packing density comparable with or greater than that of the glass-ceramic green sheet when filled in the throughholes; printing a conductor paste on the green sheet having the throughholes filled with the powder mixture, to form a circuit conductor pattern on the green sheet; laminating a plurality of the green sheets having the conductor pattern formed thereon, to form a laminate body; heating the laminate body to thereby remove a binder therefrom and preliminary-fire the laminate body; and firing the preliminary-fired body.