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    Lighting arrangement, light guide arrangement and method
    31.
    发明授权
    Lighting arrangement, light guide arrangement and method 有权

    公开(公告)号：US12189280B2

    公开(公告)日：2025-01-07

    申请号：US17612834

    申请日：2020-03-26

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Peter Brick ,  Frank Singer

    IPC: G03B21/20 ,  G02B27/01 ,  G02B27/30 ,  H01L25/075 ,  H01L27/15

    Abstract: The invention relates to an illumination arrangement comprising a light-emitting optoelectronic element and an optical device for beam conversion of electromagnetic radiation generated by the light-emitting optoelectronic element. The light emitting optoelectronic element comprises a plurality of emission areas arranged in matrix form; and each emission region is associated with a main beam direction. At least a portion of the emission areas is arranged such that the centers of the emission areas lie on a curved surface.

    Radiation-emitting device
    32.
    发明授权
    Radiation-emitting device 有权

    公开(公告)号：US11415814B2

    公开(公告)日：2022-08-16

    申请号：US16366558

    申请日：2019-03-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Peter Brick ,  Hubert Halbritter ,  Mikko Perälä

    IPC: G02B30/27 ,  H04N13/305

    Abstract: A radiation-emitting device including a radiation source, an emission surface through which radiation from the radiation source passes during operation, wherein the emission surface includes a plurality of pixels, each pixel includes a plurality of subpixels, in plan view of the emission surface, each pixel forms a partial area of the emission surface and each subpixel forms a portion of such partial area, for each pixel, at least first subpixels are operable individually and independently of one another, and all subpixels of a pixel together make up at most 50% of the area of the pixel so that in simultaneous operation of all subpixels radiation is emitted via at most 50% of the area of the pixel.

    Optoelectronic device comprising a scattering element
    36.
    发明授权
    Optoelectronic device comprising a scattering element 有权

    公开(公告)号：US11143381B2

    公开(公告)日：2021-10-12

    申请号：US16328699

    申请日：2017-08-24

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Peter Brick ,  Hubert Halbritter

    IPC: F21V5/04 ,  F21V5/00 ,  G02B5/02 ,  F21Y105/10 ,  F21Y115/10 ,  F21Y115/30

    Abstract: In an embodiment, an arrangement includes an optoelectronic device including a plurality of components configured to generate electromagnetic radiation, wherein the components are arranged in a grid having identical spacings and a scattering element for expanding a radiation region of the electromagnetic radiation of the device, the scattering element comprising a first layer having first linear structures, the first structures being arranged parallel to one another and a second layer having second linear structures, the second linear structures being aligned parallel to one another, wherein the first linear structures and the second linear structures are arranged at a predefined angle of between 1° and 179°, wherein the first linear structures and/or the second linear structures constitute wave peaks and wave valleys, wherein adjacent wave valleys and adjacent wave peaks constitute a periodic spacing, and wherein the periodic spacing deviates at most by 20% from a multiple of the periodic spacing of the components.

    Radiation emitting device
    37.
    发明授权
    Radiation emitting device 有权

    公开(公告)号：US10582585B2

    公开(公告)日：2020-03-03

    申请号：US16256879

    申请日：2019-01-24

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Peter Brick ,  Stefan Grötsch ,  Stephan Pawlik ,  Michael Wittmann ,  Uli Hiller

    IPC: H01L27/14 ,  H01L27/30 ,  H01L27/32 ,  H01L33/50 ,  H05B33/08 ,  H01L27/15 ,  H01L33/44

    Abstract: A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.

    Radiation Emitting Device
    39.
    发明申请
    Radiation Emitting Device 审中-公开

    公开(公告)号：US20190230763A1

    公开(公告)日：2019-07-25

    申请号：US16256879

    申请日：2019-01-24

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Peter Brick ,  Stefan Grötsch ,  Stephan Pawlik ,  Michael Wittmann ,  Uli Hiller

    IPC: H05B33/08 ,  H01L27/15 ,  H01L33/50 ,  H01L33/44

    Abstract: A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.

    Optoelectronic Device Comprising a Scattering Element
    40.
    发明申请
    Optoelectronic Device Comprising a Scattering Element 审中-公开

    公开(公告)号：US20190204608A1

    公开(公告)日：2019-07-04

    申请号：US16328699

    申请日：2017-08-24

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Peter Brick ,  Hubert Halbritter

    IPC: G02B27/09 ,  F21V5/00 ,  G02B3/00

    CPC classification number: G02B27/0927 ,  F21V5/004 ,  F21V5/008 ,  F21V5/043 ,  F21Y2105/10 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B3/0068 ,  G02B5/0215 ,  G02B5/0278 ,  G02B27/0961 ,  G02B27/0966

    Abstract: In an embodiment, an arrangement includes an optoelectronic device including a plurality of components configured to generate electromagnetic radiation, wherein the components are arranged in a grid having identical spacings and a scattering element for expanding a radiation region of the electromagnetic radiation of the device, the scattering element comprising a first layer having first linear structures, the first structures being arranged parallel to one another and a second layer having second linear structures, the second linear structures being aligned parallel to one another, wherein the first linear structures and the second linear structures are arranged at a predefined angle of between 1° and 179°, wherein the first linear structures and/or the second linear structures constitute wave peaks and wave valleys, wherein adjacent wave valleys and adjacent wave peaks constitute a periodic spacing, and wherein the periodic spacing deviates at most by 20% from a multiple of the periodic spacing of the components.

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