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公开(公告)号:US10236281B1
公开(公告)日:2019-03-19
申请号:US15695629
申请日:2017-09-05
申请人: Qorvo US, Inc.
发明人: Julio C. Costa , George Maxim
IPC分类号: H01L25/065 , H01L25/00 , H01L21/56
摘要: The present disclosure relates to a microelectronics package with a self-aligned stacked-die assembly and a process for making the same. The disclosed microelectronics package includes a module substrate, a first die with a first coupling component, a second die with a second coupling component, and a first mold compound. The first die is attached to the module substrate. The first mold compound resides over the module substrate, surrounds the first die, and extends above an upper surface of the first die to define a first opening. Herein, the first mold compound provides vertical walls of the first opening, which are aligned with edges of the first die in X-direction and Y-direction. The second die is stacked with the first die and in the first opening, such that the second coupling component is mirrored to the first coupling component.
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32.
公开(公告)号:US10090262B2
公开(公告)日:2018-10-02
申请号:US15287202
申请日:2016-10-06
申请人: Qorvo US, Inc.
摘要: The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, the magnetically enhanced mold compound component, and a mold compound component. The thinned flip-chip die is attached to the module substrate and includes a device layer with an inductive element embedded therein. Herein, the inductive element is underlying the first surface portion and not underlying the second surface portion. The magnetically enhanced mold compound component is formed over the first surface portion. The mold compound component is formed over the second surface portion, not over the first surface portion, and surrounding the magnetically enhanced mold compound component.
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公开(公告)号:US09973154B2
公开(公告)日:2018-05-15
申请号:US15467829
申请日:2017-03-23
申请人: Qorvo US, Inc.
发明人: George Maxim , Marcus Granger-Jones , Kelvin Kai Tuan Yan , Dirk Robert Walter Leipold , Baker Scott
CPC分类号: H03F1/56 , H03F1/0266 , H03F1/223 , H03F3/19 , H03F3/72 , H03F2200/111 , H03F2200/18 , H03F2200/222 , H03F2200/27 , H03F2200/294 , H03F2200/387 , H03F2200/451 , H03F2203/7206 , H03F2203/7209 , H03F2203/7215 , H03F2203/7221 , H03F2203/7236 , H04B1/109 , H04B1/18
摘要: RF receive circuitry, which includes a first output impedance matching circuit coupled to a first alpha output of a first alpha LNA, a second output impedance matching circuit coupled to a first beta output of a first beta LNA, and a first dual output RF LNA, is disclosed. The first dual output RF LNA includes the first alpha LNA, the first beta LNA, and a first gate bias control circuit, which is coupled between a first alpha input of the first alpha LNA and ground; is further coupled between a first beta input of the first beta LNA and the ground; is configured to select one of enabled and disabled of the first alpha LNA using an alpha bias signal via the first alpha input; and is further configured to select one of enabled and disabled of the first beta LNA using a beta bias signal via the first beta input.
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公开(公告)号:US09966981B2
公开(公告)日:2018-05-08
申请号:US15415538
申请日:2017-01-25
申请人: Qorvo US, Inc.
CPC分类号: H04B1/1018 , H03F1/565 , H03F3/19 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/267 , H03F2200/294 , H03F2200/451 , H03F2203/7209 , H03H7/09 , H03H7/1775 , H03H7/38 , H03H7/46 , H03H9/64 , H03H2210/012 , H03H2210/025 , H03H2210/04 , H04B1/18 , H04W4/70 , H04W52/0209 , Y02D70/40
摘要: A radio frequency (RF) receiver, which has an RF filter and impedance matching circuit and an RF low noise amplifier (LNA), is disclosed. The RF filter and impedance matching circuit includes a first passive RF acoustic resonator; provides an RF bandpass filter having an RF receive band based on the first passive RF acoustic resonator; and presents an input impedance at an RF input and an output impedance at an RF output, such that a ratio of the output impedance to the input impedance is greater than 40. The RF LNA is coupled to the RF output.
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35.
公开(公告)号:US09960095B2
公开(公告)日:2018-05-01
申请号:US15353346
申请日:2016-11-16
申请人: Qorvo US, Inc.
发明人: Julio C. Costa , George Maxim , Dirk Robert Walter Leipold , Baker Scott , Merrill Albert Hatcher, Jr. , Stephen Mobley
摘要: The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally enhanced mold compound component includes a lower portion filling a lower region of the cavity and residing over the upper surface of the thinned flip chip die, and an upper portion filling an upper region of the cavity and residing over the lower portion. A first average thermal conductivity of the lower portion is at least 1.2 times greater than a second average thermal conductivity of the upper portion.
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公开(公告)号:US20180114801A1
公开(公告)日:2018-04-26
申请号:US15789107
申请日:2017-10-20
申请人: Qorvo US, Inc.
IPC分类号: H01L27/13 , H01L23/528 , H01L23/522 , H01L27/12 , H01L29/45 , H01L29/08
CPC分类号: H01L27/13 , H01L23/4824 , H01L23/5226 , H01L23/528 , H01L27/1255 , H01L28/20 , H01L29/0847 , H01L29/458 , H01L29/786
摘要: Disclosed is a radio frequency (RF) switch that includes a substrate and a plurality of elongated drain/source (D/S) diffusion regions laterally disposed in parallel with one another and separated by a plurality of elongated channel regions. A plurality of elongated D/S resistor regions extends between an adjacent pair of plurality of elongated D/S diffusion regions, and a plurality of elongated gate structures resides over corresponding ones of the elongated channel regions. A silicide layer resides over a majority of at least top surfaces of the plurality of the elongated D/S diffusion regions and the plurality of elongated gate structures, wherein less than a majority of each of the plurality of the elongated D/S resistor regions are covered by the silicide layer.
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公开(公告)号:US09954498B2
公开(公告)日:2018-04-24
申请号:US15587581
申请日:2017-05-05
申请人: Qorvo US, Inc.
CPC分类号: H03F3/193 , H03F1/56 , H03F1/565 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/165 , H03F2200/222 , H03F2200/267 , H03F2200/294 , H03F2200/391 , H03F2200/451 , H03F2203/7209 , H03H7/09 , H03H7/1775 , H03H7/38 , H03H2210/012 , H03H2210/025 , H03H2210/04 , H03J3/06 , H03J5/242 , H04B1/04
摘要: RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first RF LNA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.
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38.
公开(公告)号:US09922847B2
公开(公告)日:2018-03-20
申请号:US15287273
申请日:2016-10-06
申请人: Qorvo US, Inc.
IPC分类号: H01L21/56 , H01L23/31 , H01L23/29 , H01L21/3105 , H01L23/00
摘要: The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, the magnetically enhanced mold compound component, and a mold compound component. The thinned flip-chip die is attached to the module substrate and includes a device layer with an inductive element embedded therein. Herein, the inductive element is underlying the first surface portion and not underlying the second surface portion. The magnetically enhanced mold compound component is formed over the first surface portion. The mold compound component is formed over the second surface portion, not over the first surface portion, and surrounding the magnetically enhanced mold compound component.
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39.
公开(公告)号:US09892938B2
公开(公告)日:2018-02-13
申请号:US15287273
申请日:2016-10-06
申请人: Qorvo US, Inc.
IPC分类号: H01L21/56 , H01L23/31 , H01L23/29 , H01L21/3105 , H01L23/00
摘要: The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, the magnetically enhanced mold compound component, and a mold compound component. The thinned flip-chip die is attached to the module substrate and includes a device layer with an inductive element embedded therein. Herein, the inductive element is underlying the first surface portion and not underlying the second surface portion. The magnetically enhanced mold compound component is formed over the first surface portion. The mold compound component is formed over the second surface portion, not over the first surface portion, and surrounding the magnetically enhanced mold compound component.
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40.
公开(公告)号:US20170358511A1
公开(公告)日:2017-12-14
申请号:US15353346
申请日:2016-11-16
申请人: Qorvo US, Inc.
发明人: Julio C. Costa , George Maxim , Dirk Robert Walter Leipold , Baker Scott , Merrill Albert Hatcher, JR. , Stephen Mobley
IPC分类号: H01L23/31 , H01L21/56 , H01L23/373 , H01L23/29
CPC分类号: H01L23/3135 , H01L21/56 , H01L23/295 , H01L23/3121 , H01L23/3737
摘要: The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally enhanced mold compound component includes a lower portion filling a lower region of the cavity and residing over the upper surface of the thinned flip chip die, and an upper portion filling an upper region of the cavity and residing over the lower portion. A first average thermal conductivity of the lower portion is at least 1.2 times greater than a second average thermal conductivity of the upper portion.
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