公开(公告)号：US20110096803A1

公开(公告)日：2011-04-28

申请号：US11963365

申请日：2007-12-21

申请人： Ralph H. Johnson ,  James Guenter

发明人： Ralph H. Johnson ,  James Guenter

IPC分类号： H01S5/183 ,  H01L33/46

CPC分类号： H01S5/18361 ,  H01L33/0045 ,  H01L33/105 ,  H01S5/0425 ,  H01S5/18344 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3077

摘要： An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.

摘要翻译： 用于改善传导和反射率并最小化吸收的光学装置。 该光学装置包括第一反射镜，该第一反射镜包括被设计成反射预定波长的光场的第一多个反射镜周期，其中光场具有峰值和零点。 多个反射镜周期中的每一个包括具有高载流子迁移率的第一层，具有较低载流子迁移率的第二层以及第一和第二层之间的第一组成斜面。 第一和第二层的厚度对于第一多个反射镜周期的至少一部分被建立为使得光场的零点发生在第一层内而不在组成斜坡内。 第一多个反射镜周期内的第一层的至少部分包括在光场的零点的位置处的升高的掺杂浓度。

公开(公告)号：US20110086452A1

公开(公告)日：2011-04-14

申请号：US12973754

申请日：2010-12-20

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L33/60

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/305 ,  H01S5/3095

摘要： Methods for fabricating semiconductors with enhanced strain. One embodiment includes fabrication of a semiconductor device with an epitaxial structure. The epitaxial structure is formed with one or more semiconductor layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial growth to form periods where surfaces are group III rich.

摘要翻译： 制造具有增强应变的半导体的方法。 一个实施例包括制造具有外延结构的半导体器件。 外延结构由一个或多个半导体层形成。 层中的一个或多个包括在外延生长期间包含少量Al和重复δ掺杂的掺杂剂，以形成表面为III族富集的时期。

公开(公告)号：US20110049471A1

公开(公告)日：2011-03-03

申请号：US12941940

申请日：2010-11-08

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L33/06

CPC分类号： H01L29/201 ,  H01L33/06 ,  H01L33/30 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/3211

摘要： Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.

摘要翻译： 制造诸如VCSEL，SEL，LED和HBT的半导体器件在窄带隙材料附近具有宽带隙材料。 通过位于宽带隙材料和窄带隙材料之间的中间结构来改善电子注入。 中间结构是在宽带隙材料和窄带隙材料之间的组成的斜坡中的拐点，例如平台。 中间结构是高度掺杂的并且具有期望的低电子亲和力的组成。 注入结构可以在具有高孔亲和力的p掺杂中间结构的器件的p侧上使用。

公开(公告)号：US07829912B2

公开(公告)日：2010-11-09

申请号：US11735993

申请日：2007-04-16

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L31/167

CPC分类号： H01L29/201 ,  H01L33/06 ,  H01L33/30 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/3211

摘要： Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.

摘要翻译： 制造诸如VCSEL，SEL，LED和HBT的半导体器件在窄带隙材料附近具有宽带隙材料。 通过位于宽带隙材料和窄带隙材料之间的中间结构来改善电子注入。 中间结构是在宽带隙材料和窄带隙材料之间的组成的斜坡中的拐点，例如平台。 中间结构是高度掺杂的并且具有期望的低电子亲和力的组成。 注入结构可以在具有高孔亲和力的p掺杂中间结构的器件的p侧上使用。

公开(公告)号：US07483462B2

公开(公告)日：2009-01-27

申请号：US10836176

申请日：2004-04-30

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S5/32366 ,  H01S5/3406 ,  H01S5/34306

摘要： Disclosed is a structure for an active region of a GaAs based VCSEL with strong optical output substantially within the range of 1.3 μm and potentially for the 1.5 um range, making it well suited for the transmissivity of silica core fiberoptics. The active region of the VCSEL incorporates antimony in the quantum wells and portions of the barriers. The presence of Sb substantially smooths the surface of the barriers and quantum wells during the process of beam epitaxy, causing a higher critical thickness of each of the layers, thereby enabling fabrication with significantly reduced defects.

摘要翻译： 公开了一种基于GaAs的VCSEL的有源区的结构，其具有基本上在1.3μm范围内的强光学输出，并且潜在地为1.5μm的范围，使得其非常适合于硅芯光纤的透射率。 VCSEL的有源区域在量子阱和屏障的一部分中并入锑。 在光束外延过程中，Sb的存在使得势垒和量子阱的表面基本上平滑，从而导致每个层的更高的临界厚度，从而能够以显着减少的缺陷进行制造。

公开(公告)号：US20080023688A1

公开(公告)日：2008-01-31

申请号：US11735993

申请日：2007-04-16

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L33/00 ,  H01L29/737

CPC分类号： H01L29/201 ,  H01L33/06 ,  H01L33/30 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/3211

摘要： Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.

摘要翻译： 制造诸如VCSEL，SEL，LED和HBT的半导体器件在窄带隙材料附近具有宽带隙材料。 通过位于宽带隙材料和窄带隙材料之间的中间结构来改善电子注入。 中间结构是在宽带隙材料和窄带隙材料之间的组成的斜坡中的拐点，例如平台。 中间结构是高度掺杂的并且具有期望的低电子亲和力的组成。 注入结构可以在具有高孔亲和力的p掺杂中间结构的器件的p侧上使用。

公开(公告)号：US07095770B2

公开(公告)日：2006-08-22

申请号：US10026016

申请日：2001-12-20

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S5/3211 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34353

摘要： Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well comprised of InGaAsSbN; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Confinement and barrier layers can comprise AlGaAs. Barrier layer, in the alternative, can also comprise GaAsP. Nitrogen can be placed in the quantum wells. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

公开(公告)号：US06850548B2

公开(公告)日：2005-02-01

申请号：US10028435

申请日：2001-12-28

申请人： Samuel S. Villareal ,  Ralph H. Johnson

发明人： Samuel S. Villareal ,  Ralph H. Johnson

IPC分类号： H01S5/183 ,  H01S5/30 ,  H01S3/082

CPC分类号： H01S5/18313 ,  H01S5/18358 ,  H01S5/3054

摘要： An asymmetric distributed Bragg reflector (DBR) suitable for use in vertical cavity surface emitting lasers. The asymmetric DBR is comprised of stacked material layers having different indexes of refraction that are joined using asymmetrical transition regions in which the transition steps within a transition region have different material compositions, different doping levels, and different layer thicknesses. Adjacent transition regions have different transition steps. Thinner transition regions are relatively highly doped and are located where the optical standing wave within the DBR has a low field strength. Thicker transition regions are relatively lightly doped and are located where the optical standing wave has a relatively high field strength. Beneficially, in the AlXGa(1−X)As material system the stacked material layers are alternating layers of AlAs and GaAs. Other material systems will use other alternating layers.

摘要翻译： 适用于垂直腔表面发射激光器的非对称分布布拉格反射器（DBR）。 非对称DBR由具有不同折射率的堆叠材料层组成，其使用不对称过渡区域连接，其中过渡区域内的转变步骤具有不同的材料组成，不同的掺杂水平和不同的层厚度。 相邻的过渡区域具有不同的过渡步骤。 较薄的过渡区域相对高掺杂，位于DBR内的光驻波具有低场强。 较厚的过渡区域相对较轻地掺杂，并且位于光驻波具有相对高的场强的位置。 有利地，在AlXGa（1-X）As材料体系中，堆叠的材料层是AlAs和GaAs的交替层。 其他材料系统将使用其他交替层。

公开(公告)号：US06256333B1

公开(公告)日：2001-07-03

申请号：US08989731

申请日：1997-12-12

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S3085

CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/18333 ,  H01S5/18358 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3211 ,  H01S5/3432

摘要： An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.

摘要翻译： 在一个（即，n掺杂）端具有扩展的有效未掺杂区域的VCSEL的有源区和另一个（即，p掺杂）端，其具有直到甚至包括有源区的一部分的显着掺杂区。 之前的方式是将n和p掺杂区域重掺杂到活性区域，至少接近或甚至部分地掺入其中。

公开(公告)号：US5940422A

公开(公告)日：1999-08-17

申请号：US674230

申请日：1996-06-28

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/028 ,  H01S5/10 ,  H01S5/183 ,  H01S3/19

CPC分类号： H01S5/18391 ,  H01S2301/166 ,  H01S2301/203 ,  H01S5/18308 ,  H01S5/18361 ,  H01S5/2059

摘要： A vertical cavity surface emitting laser is provided with a mode control structure that selectively encourages or inhibits the lasing of the laser in regions of the mode control structure. Light is encouraged to lase and emit light through first portions of the mode control structure while lasing is inhibited in second portions. The first and second portions of the mode control structure are patterned by providing different thicknesses for the first and second portions of the mode control structure.

摘要翻译： 垂直腔表面发射激光器设置有模式控制结构，其在模式控制结构的区域中选择性地鼓励或禁止激光器的激光。 鼓励光通过模式控制结构的第一部分发光并在第二部分抑制激光的同时发光。 通过为模式控制结构的第一和第二部分提供不同的厚度来对模式控制结构的第一和第二部分进行图案化。