摘要:
Systems and methods for scanning a beam of light over a specimen are provided. A system may include a pre-scan acousto-optical deflector (AOD) configured to deflect a beam of light, a second AOD configured as a traveling lens to focus the scanning beam, a relay lens, and an objective lens. The relay lens may be centered on the scan line produced by the second AOD, while the objective lens may be substantially de-centered with respect to the relay lens to produce a telecentric scanning spot with no field tilt. The system may modulate the amplitude of the sound wave in the first AOD to compensate for attenuation in the second AOD. The system may pre-fill one chirp packet in the second AOD while another chirp packet is scanning to substantially reduce a delay between consecutive scans.
摘要:
A miniature incandescent lamp assembly has an elongated substantially cylindrical glass envelope having a first end and a second end. A substantially cylindrical first metal end member seals the first end of the glass envelope with a seal of substantially cylindrical configuration where the glass of the envelope is in glass-to-metal contact with the first metal end member. A substantially cylindrical second metal end member seals the second end of the glass envelope with another seal of substantially cylindrical configuration. In this seal also, the glass of the envelope is in glass-to-metal contact with the second metal end member. An incandescent filament is disposed between the first and second metal end members within the interior of the glass envelope in electrical contact with the first and second metal end members. Each of the first and second metal end members has a metal cap attached to the outside of the glass envelope, with the metal caps being larger in diameter than the glass envelope. The metal caps serve as a surface mountable electric contacts for the miniature incandescent lamp.
摘要:
A light gathering module (10) has a body (12) with a first end (14) comprising a single light transmitting surface (16) and a second end (18) having a plurality of arms (20), each arm (20) having an independent light gathering terminus (22) that is rectangular. In a preferred embodiment of the invention, the first end (14) of the body also is rectangular. The light gathering module (10) can be fabricated from acrylic, plastic, glass or other suitable material and preferably has no cladding so that light output I maximized. When combined in a housing (32) with a projector lens (34) the light gathering module (10) provides a vehicle headlamp (30).
摘要:
A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.
摘要:
An optoelectronic package having passive optical components that are configured to reduce the amount of optical back reflection that reaches an optoelectronic device housed within the optoelectronic package. In one example, the optoelectronic package includes an optoelectronic device, a wave plate, and a linear polarizer. The optoelectronic device is configured to emit an optical signal along an optical path. The wave plate is positioned in the optical path of the optoelectronic device. The linear polarizer is positioned in the optical path of the optoelectronic device between the optoelectronic device and the wave plate.
摘要:
A virtual point light source (10) has a support (12) having an axis (14), a plurality of individual light emitting diodes (16) positioned on the support (12); and an individual optic (18) associated with each of the light emitting diodes (16), each of the individual optics (18) focusing the light from its associated light emitting diode (16) to a virtual point (20) on the axis (14) at a distance (D) from said support.
摘要:
A reflector lamp assembly may be formed with a reflector housing having a reflector with a prescribed reflective surface; the reflector formed with a wall defining a through passage. A lamp bulb assembly having an axially extending stem supports a head extending transverse to the axis, the head having a first generally linearly extending region, a first set of LEDs mounted generally in a row along the region oriented to face in one plane towards a reflector. Electrical connections for the LEDs extend through the head, and stem to the exterior of the assembly for electrical connection. A base extends in the through passage and is mechanically mounted to the optical housing with the LED assembly oriented to face the reflective surface.
摘要:
Systems and methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. Because the depth of the quantum wells in the valence band is more than is required although the addition of nitrogen reduces the depth of the quantum wells in the valence band. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.
摘要:
Multi-component barrier layers include formation of a GaAs layer and at least one adjacent GaAsN layer. The resulting multi-component barrier layer shape can provide enhanced (extended) offset for capture of holes and enhanced electrons. Other benefits include: a small amount of strain compensation; poorer spatial overlap of higher confined states reducing parasitics at high bias, with some small effect on the lowest confined states. Quantum wells and associated barriers layers can be grown with combinations of gallium, (Ga), arsenic, (As), nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., with wavelengths over 1200 nm. Layers of strained quantum well material can also be supported by mechanical stabilizers.
摘要:
Incorporation of a GaAs “Extended lower barrier” in between quantum wells using nitrogen and confining layers using aluminum. Not to be confused with barrier layers used in quantum wells, the extended lower barrier is formed between the active region and the outer/confining layers where N and Al are respectively used. N and Al can be separated in the case where, for example, AlGaAs is being used in the confining layers and any nitrogen containing material is being used in the active region. Aluminum and Nitrogen when allowed to combine can cause deep traps and resultant non-radiative recombination, therefore N and Al pairing should be prevented. The GaAs extended barrier layer can provide a protective measure against such combination.