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    Acoustic resonator performance enhancement using filled recessed region
    31.
    发明申请
    Acoustic resonator performance enhancement using filled recessed region 有权
    使用填充凹陷区域的声谐振器性能提升

    公开(公告)号：US20060226932A1

    公开(公告)日：2006-10-12

    申请号：US11100311

    申请日：2005-04-06

    Applicant: Ronald Fazzio ,  Richard Ruby

    Inventor： Ronald Fazzio ,  Richard Ruby

    IPC: H03H9/54

    CPC classification number: H03H9/132 ,  H03H9/02149 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    Abstract: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a fill region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The fill region is in one of the first and second electrodes.

    Abstract translation: 声谐振器，其包括基板，第一电极，压电材料层，第二电极和填充区域。 第一电极与衬底相邻，并且第一电极具有外周边。 压电层与第一电极相邻。 第二电极邻近压电层，第二电极具有外周。 填充区域位于第一和第二电极之一中。

    BONDED WAFER STRUCTURE AND METHOD OF FABRICATION
    34.
    发明申请
    BONDED WAFER STRUCTURE AND METHOD OF FABRICATION 失效
    结合的波浪结构和制造方法

    公开(公告)号：US20100096745A1

    公开(公告)日：2010-04-22

    申请号：US12254536

    申请日：2008-10-20

    Applicant: Richard Ruby ,  James P. Roland ,  Frank S. Geefay

    Inventor： Richard Ruby ,  James P. Roland ,  Frank S. Geefay

    IPC: H01L23/12 ,  H01L21/00

    CPC classification number: H03H9/0547 ,  B81B2201/0271 ,  B81C1/00333 ,  B81C2203/0118 ,  B81C2203/032 ,  H01L21/187 ,  H01L23/10 ,  H01L2924/0002 ,  H03H9/1014 ,  H01L2924/00

    Abstract: A method of packaging electronics comprises providing a first wafer and providing a second wafer. The method also comprises depositing a polymer material over a surface of the first wafer; and selectively removing a portion of the polymer from the first wafer to create a void in the polymer. The method also comprises placing the first wafer over the second wafer and in contact with the polymer; and curing the polymer to bond the first wafer to the second wafer. A bonded wafer structure is also described.

    Abstract translation: 包装电子器件的方法包括提供第一晶片并提供第二晶片。 该方法还包括在第一晶片的表面上沉积聚合物材料; 并且从第一晶片选择性地去除聚合物的一部分以在聚合物中产生空隙。 该方法还包括将第一晶片放置在第二晶片上并与聚合物接触; 并固化聚合物以将第一晶片结合到第二晶片。 还描述了接合晶片结构。

    Arrangement of lattice filter
    36.
    发明授权
    Arrangement of lattice filter 有权
    晶格滤波器的布置

    公开(公告)号：US07187255B2

    公开(公告)日：2007-03-06

    申请号：US10974078

    申请日：2004-10-26

    Applicant: Kun Wang ,  Michael Louis Frank ,  Richard Ruby

    Inventor： Kun Wang ,  Michael Louis Frank ,  Richard Ruby

    IPC: H03H9/54

    CPC classification number: H03H9/0095

    Abstract: A filter and method of manufacturing a filter having a lattice arrangement that efficiently utilizes substrate space. An embodiment of the invention is directed to a filter having a plurality of resonators disposed on a substrate, each resonator comprising a first electrode and a second electrode disposed vertically adjacent such that an acoustic cavity of a piezoelectric material is formed between each first electrode and each second electrode of each resonator, the first and second electrodes of each resonator electrically isolated from each other via the piezoelectric material. In this manner, the filter is realized without having to use any vias. Additionally, the resonators may be of a shape that allows each to be disposed close together such that some sides of each of the resonators are parallel to each other. Thus, substrate space can be preserved even further.

    Abstract translation: 一种制造具有有效利用衬底空间的晶格布置的滤光器的滤光器和方法。 本发明的实施例涉及一种具有设置在基板上的多个谐振器的滤波器，每个谐振器包括第一电极和垂直相邻设置的第二电极，使得在每个第一电极和每个第一电极之间形成压电材料的声腔 每个谐振器的第二电极，每个谐振器的第一和第二电极经由压电材料彼此电隔离。 以这种方式，实现过滤器而不必使用任何通孔。 此外，谐振器可以是允许每个谐振器彼此靠近放置的形状，使得每个谐振器的一些侧面彼此平行。 因此，可以进一步保持基板空间。

    Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips
    37.
    发明申请
    Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips 审中-公开
    用于通过通孔接触接触到用于FBAR芯片的晶片级封装的盖内的偏移接触器的方法

    公开(公告)号：US20070004079A1

    公开(公告)日：2007-01-04

    申请号：US11173367

    申请日：2005-06-30

    Applicant: Frank Geefay ,  Richard Ruby

    Inventor： Frank Geefay ,  Richard Ruby

    IPC: H01L21/00 ,  H01L21/4763 ,  H01L21/44

    CPC classification number: H03H9/105 ,  H01L21/76898 ,  H03H9/10

    Abstract: A device package includes a device substrate and a cap mounted on the device substrate. The device substrate includes a contact pad. The cap defines a via with a slightly sloped sidewall through the cap, a contactor extending from an interior surface of the cap, a contactor pad over the contactor, a via pad on the interior surface of the cap over the via and coupled to the contactor pad, and a via contact over the exterior surface of the cap and in the via coupled to the via pad. The contactor is offset from the via. When the cap is mounted on the device substrate, the contactor pad on the contactor is pressed and cold welded onto the contact pad on the device substrate.

    Abstract translation: 器件封装包括器件衬底和安装在器件衬底上的帽。 器件衬底包括接触焊盘。 所述盖限定了通过所述盖具有稍微倾斜的侧壁的通孔，从所述盖的内表面延伸的接触器，所述接触器上的接触器垫，所述盖的内表面上的通孔垫在所述通孔上并且联接到所述接触器 垫，以及在盖的外表面上的通孔接触件和连接到通孔垫的通孔中。 接触器偏离通孔。 当盖安装在设备基板上时，接触器上的接触器垫被压制并冷焊在设备基板上的接触垫上。

    Thin film bulk acoustic resonator with a mass loaded perimeter
    38.
    发明申请
    Thin film bulk acoustic resonator with a mass loaded perimeter 有权
    具有质量负载周长的薄膜体声波谐振器

    公开(公告)号：US20060103492A1

    公开(公告)日：2006-05-18

    申请号：US10990201

    申请日：2004-11-15

    Applicant: Hongjun Feng ,  R. Fazzio ,  Richard Ruby ,  Paul Bradley

    Inventor： Hongjun Feng ,  R. Fazzio ,  Richard Ruby ,  Paul Bradley

    IPC: H03H9/54

    CPC classification number: H03H9/02118 ,  H03H9/173 ,  H03H9/177

    Abstract: A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).

    Abstract translation: 由电极制成的谐振器结构（FBAR）夹着压电材料。 两个导电电极的交点定义了声谐振器的有效面积。 活动区域分为两个同心区域; 周边或框架，以及中央区域。 在两个导电电极中的一个上添加环，以改善电性能（以Q为单位）。

    Acoustic resonator performance enhancement using alternating frame structure
    39.
    发明申请
    Acoustic resonator performance enhancement using alternating frame structure 有权
    使用交替框架结构的声谐振器性能提升

    公开(公告)号：US20060071736A1

    公开(公告)日：2006-04-06

    申请号：US11159753

    申请日：2005-06-23

    Applicant: Richard Ruby ,  Ronald Fazzio ,  Hongjun Feng ,  Paul Bradley

    Inventor： Richard Ruby ,  Ronald Fazzio ,  Hongjun Feng ,  Paul Bradley

    IPC: H03H9/54

    CPC classification number: H03H9/02086 ,  H03H3/02 ,  H03H9/02149 ,  H03H9/13 ,  H03H9/132 ,  H03H9/173 ,  H03H2003/0428

    Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

    Abstract translation: 公开了一种包括基板，第一电极，压电材料层，第二电极和交替框架区域的声共振器。 第一电极与衬底相邻，并且第一电极具有外周边。 压电层与第一电极相邻。 第二电极邻近压电层，第二电极具有外周。 交替的框架区域在第一和第二电极之一上。

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