Acoustic resonator performance enhancement using alternating frame structure
    1.
    发明申请
    Acoustic resonator performance enhancement using alternating frame structure 有权
    使用交替框架结构的声谐振器性能提升

    公开(公告)号:US20060071736A1

    公开(公告)日:2006-04-06

    申请号:US11159753

    申请日:2005-06-23

    IPC分类号: H03H9/54

    摘要: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

    摘要翻译: 公开了一种包括基板,第一电极,压电材料层,第二电极和交替框架区域的声共振器。 第一电极与衬底相邻,并且第一电极具有外周边。 压电层与第一电极相邻。 第二电极邻近压电层,第二电极具有外周。 交替的框架区域在第一和第二电极之一上。

    Acoustic resonator performance enhancements using recessed region
    2.
    发明申请
    Acoustic resonator performance enhancements using recessed region 有权
    使用凹陷区域的声谐振器性能增强

    公开(公告)号:US20050275486A1

    公开(公告)日:2005-12-15

    申请号:US10867540

    申请日:2004-06-14

    IPC分类号: H03H9/02 H03H9/17 H03H9/54

    摘要: An acoustic resonator includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a recessed region. The substrate has a first surface. The first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material. The second electrode has a second electrode perimeter that is shaped as a polygon. The recessed region is adjacent the second electrode. The recessed region has a shape defining a recessed region perimeter. The recessed region perimeter is recessed relative to the second electrode perimeter.

    摘要翻译: 声谐振器包括基板,第一电极,压电材料层,第二电极和凹陷区域。 衬底具有第一表面。 第一电极邻近衬底的第一表面。 压电材料层与第一电极相邻。 第二电极与压电材料层相邻。 第二电极具有形状为多边形的第二电极周边。 凹陷区域与第二电极相邻。 凹陷区域具有限定凹陷区域周边的形状。 凹陷区域周边相对于第二电极周边凹进。

    Thin film bulk acoustic resonator with a mass loaded perimeter
    3.
    发明授权
    Thin film bulk acoustic resonator with a mass loaded perimeter 有权
    具有质量负载周长的薄膜体声波谐振器

    公开(公告)号:US07280007B2

    公开(公告)日:2007-10-09

    申请号:US10990201

    申请日:2004-11-15

    IPC分类号: H03H9/00 H03H9/09

    摘要: A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).

    摘要翻译: 由电极制成的谐振器结构(FBAR)夹着压电材料。 两个导电电极的交点定义了声谐振器的有效面积。 活动区域分为两个同心区域; 周边或框架,以及中央区域。 在两个导电电极中的一个上添加环,以改善电性能(以Q为单位)。

    Acoustically coupled thin-film resonators
    4.
    发明申请
    Acoustically coupled thin-film resonators 有权
    声耦合薄膜谐振器

    公开(公告)号:US20060091978A1

    公开(公告)日:2006-05-04

    申请号:US10980562

    申请日:2004-11-03

    IPC分类号: H03H9/58

    摘要: Acoustically coupled resonators include a first and a second acoustic resonator. Both the first and second acoustic resonators include a first electrode, a layer of piezoelectric material, and a second electrode. The first electrode is adjacent a first surface of the layer of piezoelectric material. The second electrode is adjacent a second surface of the layer of piezoelectric material. At least the second electrode has an edge that is tapered.

    摘要翻译: 声耦合谐振器包括第一和第二声谐振器。 第一和第二声谐振器都包括第一电极,压电材料层和第二电极。 第一电极邻近压电材料层的第一表面。 第二电极邻近压电材料层的第二表面。 至少第二电极具有渐缩的边缘。

    Thin film bulk acoustic resonator with a mass loaded perimeter
    5.
    发明申请
    Thin film bulk acoustic resonator with a mass loaded perimeter 有权
    具有质量负载周长的薄膜体声波谐振器

    公开(公告)号:US20060103492A1

    公开(公告)日:2006-05-18

    申请号:US10990201

    申请日:2004-11-15

    IPC分类号: H03H9/54

    摘要: A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).

    摘要翻译: 由电极制成的谐振器结构(FBAR)夹着压电材料。 两个导电电极的交点定义了声谐振器的有效面积。 活动区域分为两个同心区域; 周边或框架,以及中央区域。 在两个导电电极中的一个上添加环,以改善电性能(以Q为单位)。

    Acoustically coupled resonators and method of making the same
    6.
    发明申请
    Acoustically coupled resonators and method of making the same 有权
    声耦合谐振器及其制作方法

    公开(公告)号:US20060232361A1

    公开(公告)日:2006-10-19

    申请号:US11109596

    申请日:2005-04-18

    IPC分类号: H03H9/72 H03H9/56

    摘要: An apparatus includes a substrate with a cavity and a two-stage resonator filter fabricated over the cavity. The two-stage resonator filter includes a first stage and a second stage. The first stage includes a first resonator and a second resonator, the second resonator acoustically coupled to the first resonator. The second stage includes a third resonator and a fourth resonator, the fourth resonator acoustically coupled to the third resonator. The second resonator and the third resonators are electrically coupled. A decoupling layer couples the first resonator and the second resonator. The decoupling layer extends between the third resonator and the fourth resonator. The first resonator and the fourth resonator are above the substrate. The decoupling layer is above the first resonator and the fourth resonator. The second resonator and the third resonators are above the decoupling layer.

    摘要翻译: 一种装置包括具有空腔的衬底和在空腔上制造的两级谐振器滤波器。 两级谐振滤波器包括第一级和第二级。 第一级包括第一谐振器和第二谐振器,第二谐振器声耦合到第一谐振器。 第二级包括第三谐振器和第四谐振器,第四谐振器声耦合到第三谐振器。 第二谐振器和第三谐振器电耦合。 去耦层耦合第一谐振器和第二谐振器。 解耦层在第三谐振器和第四谐振器之间延伸。 第一谐振器和第四谐振器在衬底之上。 去耦层位于第一谐振器和第四谐振器之上。 第二谐振器和第三谐振器在去耦层之上。

    Manufacturing process for thin film bulk acoustic resonator (FBAR) filters
    8.
    发明申请
    Manufacturing process for thin film bulk acoustic resonator (FBAR) filters 审中-公开
    薄膜体声波谐振器(FBAR)滤波器的制造工艺

    公开(公告)号:US20050088257A1

    公开(公告)日:2005-04-28

    申请号:US10994068

    申请日:2004-11-18

    摘要: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

    摘要翻译: 在具有顶面的基板上制造声学谐振器的方法。 首先,产生上表面的凹陷。 接下来,凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来,在所述上表面上沉积第一电极。 然后,在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。