Acoustic resonator performance enhancement using filled recessed region
    31.
    发明申请
    Acoustic resonator performance enhancement using filled recessed region 有权
    使用填充凹陷区域的声谐振器性能提升

    公开(公告)号:US20060226932A1

    公开(公告)日:2006-10-12

    申请号:US11100311

    申请日:2005-04-06

    IPC分类号: H03H9/54

    摘要: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a fill region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The fill region is in one of the first and second electrodes.

    摘要翻译: 声谐振器,其包括基板,第一电极,压电材料层,第二电极和填充区域。 第一电极与衬底相邻,并且第一电极具有外周边。 压电层与第一电极相邻。 第二电极邻近压电层,第二电极具有外周。 填充区域位于第一和第二电极之一中。

    Film-bulk acoustic wave resonator with motion plate
    32.
    发明申请
    Film-bulk acoustic wave resonator with motion plate 有权
    具有运动板的膜 - 体声波谐振器

    公开(公告)号:US20060197411A1

    公开(公告)日:2006-09-07

    申请号:US11073345

    申请日:2005-03-04

    IPC分类号: H01L41/04

    CPC分类号: G01P15/097 G01L1/165

    摘要: An apparatus and method for measuring a target environmental variable (TEV) that employs a film-bulk acoustic resonator with motion plate. The film-bulk acoustic resonator (FBAR) includes an acoustic reflector formed in an FBAR wafer and a surface. A first electrode is formed on the surface of the acoustic reflector and has a surface. A piezoelectric layer is formed on the surface of the first electrode and has a surface. A second electrode is formed on the surface of the piezoelectric layer. A motion plate is suspended in space at a predetermined distance relative to the surface of the second electrode and is capacitively coupled to the FBAR.

    摘要翻译: 一种用于测量采用具有运动板的膜 - 体声波谐振器的目标环境变量(TEV)的装置和方法。 膜 - 体声波谐振器(FBAR)包括形成在FBAR晶片和表面中的声反射器。 第一电极形成在声反射体的表面上并具有表面。 在第一电极的表面上形成压电层并具有表面。 第二电极形成在压电层的表面上。 运动板相对于第二电极的表面以预定距离悬挂在空间中,并且电容耦合到FBAR。

    Thin-film acoustically-coupled transformer
    34.
    发明申请
    Thin-film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号:US20050093656A1

    公开(公告)日:2005-05-05

    申请号:US10699481

    申请日:2003-10-30

    摘要: One embodiment of the acoustically-coupled transformer includes a stacked bulk acoustic resonator (SBAR) having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment includes first and second stacked bulk acoustic resonators (SBARs), each as described above, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR. The transformer provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

    摘要翻译: 声耦合变压器的一个实施例包括具有堆叠的一对膜体声波谐振器(FBAR)的层叠体声波谐振器(SBAR),它们之间具有声耦合器。 每个FBAR都具有与它们之间的压电材料的平面电极。 变压器还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例包括如上所述的第一和第二层叠体声波谐振器(SBAR),将第一SBAR的一个FBAR与第二SBAR的一个FBAR连接的第一电路和连接第一SBAR的另一个FBAR的第二电路 SBAR到第二个SBAR的另一个FBAR。 变压器提供阻抗变换,可以将单端电路与平衡电路相连,反之亦然,电隔离一次和二次。 一些实施例另外电平衡。

    BONDED WAFER STRUCTURE AND METHOD OF FABRICATION
    36.
    发明申请
    BONDED WAFER STRUCTURE AND METHOD OF FABRICATION 失效
    结合的波浪结构和制造方法

    公开(公告)号:US20100096745A1

    公开(公告)日:2010-04-22

    申请号:US12254536

    申请日:2008-10-20

    IPC分类号: H01L23/12 H01L21/00

    摘要: A method of packaging electronics comprises providing a first wafer and providing a second wafer. The method also comprises depositing a polymer material over a surface of the first wafer; and selectively removing a portion of the polymer from the first wafer to create a void in the polymer. The method also comprises placing the first wafer over the second wafer and in contact with the polymer; and curing the polymer to bond the first wafer to the second wafer. A bonded wafer structure is also described.

    摘要翻译: 包装电子器件的方法包括提供第一晶片并提供第二晶片。 该方法还包括在第一晶片的表面上沉积聚合物材料; 并且从第一晶片选择性地去除聚合物的一部分以在聚合物中产生空隙。 该方法还包括将第一晶片放置在第二晶片上并与聚合物接触; 并固化聚合物以将第一晶片结合到第二晶片。 还描述了接合晶片结构。

    Arrangement of lattice filter
    37.
    发明授权
    Arrangement of lattice filter 有权
    晶格滤波器的布置

    公开(公告)号:US07187255B2

    公开(公告)日:2007-03-06

    申请号:US10974078

    申请日:2004-10-26

    IPC分类号: H03H9/54

    CPC分类号: H03H9/0095

    摘要: A filter and method of manufacturing a filter having a lattice arrangement that efficiently utilizes substrate space. An embodiment of the invention is directed to a filter having a plurality of resonators disposed on a substrate, each resonator comprising a first electrode and a second electrode disposed vertically adjacent such that an acoustic cavity of a piezoelectric material is formed between each first electrode and each second electrode of each resonator, the first and second electrodes of each resonator electrically isolated from each other via the piezoelectric material. In this manner, the filter is realized without having to use any vias. Additionally, the resonators may be of a shape that allows each to be disposed close together such that some sides of each of the resonators are parallel to each other. Thus, substrate space can be preserved even further.

    摘要翻译: 一种制造具有有效利用衬底空间的晶格布置的滤光器的滤光器和方法。 本发明的实施例涉及一种具有设置在基板上的多个谐振器的滤波器,每个谐振器包括第一电极和垂直相邻设置的第二电极,使得在每个第一电极和每个第一电极之间形成压电材料的声腔 每个谐振器的第二电极,每个谐振器的第一和第二电极经由压电材料彼此电隔离。 以这种方式,实现过滤器而不必使用任何通孔。 此外,谐振器可以是允许每个谐振器彼此靠近放置的形状,使得每个谐振器的一些侧面彼此平行。 因此,可以进一步保持基板空间。

    Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips
    38.
    发明申请
    Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips 审中-公开
    用于通过通孔接触接触到用于FBAR芯片的晶片级封装的盖内的偏移接触器的方法

    公开(公告)号:US20070004079A1

    公开(公告)日:2007-01-04

    申请号:US11173367

    申请日:2005-06-30

    摘要: A device package includes a device substrate and a cap mounted on the device substrate. The device substrate includes a contact pad. The cap defines a via with a slightly sloped sidewall through the cap, a contactor extending from an interior surface of the cap, a contactor pad over the contactor, a via pad on the interior surface of the cap over the via and coupled to the contactor pad, and a via contact over the exterior surface of the cap and in the via coupled to the via pad. The contactor is offset from the via. When the cap is mounted on the device substrate, the contactor pad on the contactor is pressed and cold welded onto the contact pad on the device substrate.

    摘要翻译: 器件封装包括器件衬底和安装在器件衬底上的帽。 器件衬底包括接触焊盘。 所述盖限定了通过所述盖具有稍微倾斜的侧壁的通孔,从所述盖的内表面延伸的接触器,所述接触器上的接触器垫,所述盖的内表面上的通孔垫在所述通孔上并且联接到所述接触器 垫,以及在盖的外表面上的通孔接触件和连接到通孔垫的通孔中。 接触器偏离通孔。 当盖安装在设备基板上时,接触器上的接触器垫被压制并冷焊在设备基板上的接触垫上。

    Method of manufacturing vertically separated acoustic filters and resonators
    39.
    发明申请
    Method of manufacturing vertically separated acoustic filters and resonators 失效
    制造垂直分离的声学滤波器和谐振器的方法

    公开(公告)号:US20060158284A1

    公开(公告)日:2006-07-20

    申请号:US11373451

    申请日:2006-03-09

    IPC分类号: H04R17/00

    摘要: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    摘要翻译: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离,所以实现谐振器所需的总面积减小,从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。