公开(公告)号：US20110062519A1

公开(公告)日：2011-03-17

申请号：US12561638

申请日：2009-09-17

Applicant: Rohit Pal ,  Stephan Waidmann

Inventor： Rohit Pal ,  Stephan Waidmann

IPC: H01L29/78 ,  H01L21/762

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/78

Abstract: Semiconductor devices with high-K/metal gates are formed with spacers that are substantially resistant to subsequent etching to remove an overlying spacer, thereby avoiding replacement and increasing manufacturing throughput. Embodiments include forming a high-K/metal gate, having an upper surface and side surfaces, over a substrate, e.g., a SOI substrate, and sequentially forming, on the side surfaces of the high-K/metal gate, a first spacer of a non-oxide material, a second spacer, of a material different from that of the first spacer, and a third spacer, of a material different from that of the second spacer. After formation of source and drain regions, e.g., epitaxially grown silicon-germanium, the third spacer is etched with an etchant, such as hot phosphoric acid, to which the second spacer is substantially resistant, thereby avoiding replacement.

Abstract translation: 具有高K /金属栅极的半导体器件由间隔物形成，其具有基本上抵抗后续蚀刻以去除上覆间隔物，从而避免替换并增加制造生产量。 实施例包括在衬底（例如SOI衬底）上形成具有上表面和侧表面的高K /金属栅极，并且在高K /金属栅极的侧表面上依次形成第一间隔物 不同于第一间隔物的材料的非氧化物材料，第二间隔物和与第二间隔物不同的材料的第三间隔物。 在形成源极和漏极区域，例如外延生长的硅 - 锗之后，用蚀刻剂（例如热磷酸）蚀刻第三间隔物，第二间隔物基本上抵抗其上，从而避免更换。

公开(公告)号：US07893496B2

公开(公告)日：2011-02-22

申请号：US12644882

申请日：2009-12-22

Applicant: Igor Peidous ,  Rohit Pal

Inventor： Igor Peidous ,  Rohit Pal

IPC: H01L27/12

CPC classification number: H01L29/78687 ,  H01L29/66553 ,  H01L29/66621 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/7848

Abstract: Stress enhanced MOS transistors are provided. A semiconductor device is provided that comprises a semiconductor-on-insulator structure, a gate insulator layer, a source region, a drain region and a conductive gate overlying the gate insulator layer. The semiconductor-on-insulator structure comprises: a substrate, a semiconductor layer, and an insulating layer disposed between the substrate and the semiconductor layer. The semiconductor layer has a first surface, a second surface and a first region. The gate insulator layer overlies the first region, the conductive gate overlies the gate insulator layer, and the source region and the drain region overlie the first surface and comprise a strain-inducing epitaxial layer

Abstract translation: 提供了应力增强型MOS晶体管。 提供一种半导体器件，其包括绝缘体上半导体结构，栅极绝缘体层，源极区域，漏极区域和覆盖栅极绝缘体层的导电栅极。 绝缘体上半导体结构包括：衬底，半导体层和布置在衬底和半导体层之间的绝缘层。 半导体层具有第一表面，第二表面和第一区域。 栅极绝缘体层覆盖第一区域，导电栅极覆盖栅极绝缘体层，源区域和漏极区域覆盖在第一表面上，并且包括应变诱导外延层

公开(公告)号：US07838308B2

公开(公告)日：2010-11-23

申请号：US12119196

申请日：2008-05-12

Applicant: Rohit Pal ,  David E. Brown ,  Alok Vaid ,  Kevin Lensing

Inventor： Rohit Pal ,  David E. Brown ,  Alok Vaid ,  Kevin Lensing

IPC: H01L21/00

CPC classification number: H01L29/7848 ,  H01L22/12 ,  H01L22/20 ,  H01L29/66636 ,  H01L29/78

Abstract: A method that includes forming a gate of a semiconductor device on a substrate and forming a recess for an embedded silicon-straining material in source and drain regions for the gate. In this method, a proximity value, which is defined as a distance between the gate and a closest edge of the recess, is controlled by controlling formation of an oxide layer provided beneath the gate. The method can also include feedforward control of process steps in the formation of the recess based upon values measured during the formation of the recess. The method can also apply feedback control to adjust a subsequent recess formation process performed on a subsequent semiconductor device based on the comparison between a measured proximity value and a target proximity value to decrease a difference between a proximity value of the subsequent semiconductor device and the target proximity value.

Abstract translation: 一种方法，包括在衬底上形成半导体器件的栅极，并在栅极的源极和漏极区域中形成嵌入的硅应变材料的凹部。 在该方法中，通过控制形成在栅极下方的氧化物层来控制被定义为栅极和凹部的最近边缘之间的距离的接近值。 该方法还可以包括基于在形成凹部期间测量的值来形成凹部中的工艺步骤的前馈控制。 该方法还可以基于测量的接近度值和目标接近值之间的比较来应用反馈控制来调整对随后的半导体器件执行的随后的凹陷形成处理，以减小随后的半导体器件的接近值与目标之间的差异 接近值。

公开(公告)号：US20100244156A1

公开(公告)日：2010-09-30

申请号：US12815129

申请日：2010-06-14

Applicant: Rohit Pal ,  Man Fai Ng ,  David Brown

Inventor： Rohit Pal ,  Man Fai Ng ,  David Brown

IPC: H01L29/78

CPC classification number: H01L29/6656 ,  H01L21/28114 ,  H01L21/28247

Abstract: Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods are provided. In an embodiment, a method for fabricating a semiconductor device comprises forming a gate stack comprising a first gate stack-forming layer overlying a semiconductor substrate and forming first sidewall spacers about sidewalls of the gate stack. After the step of forming the first sidewall spacers, a portion of the first gate stack-forming layer is exposed. The exposed portion is anisotropically etched using the gate stack and the first sidewall spacers as an etch mask. Second sidewall spacers are formed adjacent the first sidewall spacers after the step of anisotropically etching.

Abstract translation: 提供了在由这些方法制造的半导体器件和半导体器件的制造期间保护栅极堆叠的方法。 在一个实施例中，一种用于制造半导体器件的方法包括：形成包括覆盖在半导体衬底上的第一栅极叠层形成层并且围绕栅堆叠的侧壁形成第一侧壁隔离物的栅叠层。 在形成第一侧壁间隔物的步骤之后，暴露第一栅叠层形成层的一部分。 使用栅极堆叠和第一侧壁间隔物作为蚀刻掩模来各向异性蚀刻暴露部分。 在各向异性蚀刻的步骤之后，第二侧壁间隔物邻近第一侧壁间隔件形成。

公开(公告)号：US07682845B2

公开(公告)日：2010-03-23

申请号：US11964935

申请日：2007-12-27

Applicant: Rohit Pal ,  Alok Vaid ,  Kevin Lensing

Inventor： Rohit Pal ,  Alok Vaid ,  Kevin Lensing

IPC: G01R31/26

CPC classification number: H01L22/12 ,  C30B25/16 ,  C30B29/06 ,  H01L21/02532 ,  H01L22/20

Abstract: Methods are provided for calibrating a process for growing an epitaxial silicon-comprising film and for growing an epitaxial silicon-comprising film. One method comprises epitaxially growing a first silicon-comprising film on a first silicon substrate that has an adjacent non-crystalline-silicon structure that extends from said first silicon substrate. The step of epitaxially growing uses hydrochloric acid provided at a first hydrochloric acid flow rate for a first time period. A morphology of the first film relevant to the adjacent non-crystalline-silicon structure is analyzed and a thickness of the first film is measured. The first flow rate is adjusted to a second flow rate based on the morphology of the first film. The first time period is adjusted to a second time period based on the second flow rate and the thickness. A second silicon-comprising film on a second silicon substrate is epitaxially grown for the second time period using the second flow rate.

Abstract translation: 提供了用于校准用于生长外延含硅膜并用于生长外延含硅膜的工艺的方法。 一种方法包括在具有从所述第一硅衬底延伸的相邻非晶硅结构的第一硅衬底上外延生长第一含硅膜。 外延生长的步骤使用以第一次盐酸流速提供的盐酸第一次。 分析与相邻的非晶硅结构相关的第一膜的形态，并测量第一膜的厚度。 基于第一膜的形态将第一流量调节到第二流量。 基于第二流量和厚度将第一时间段调整到第二时间段。 使用第二流量，在第二时间段外延生长第二硅衬底上的第二含硅膜。

公开(公告)号：US08598009B2

公开(公告)日：2013-12-03

申请号：US13456633

申请日：2012-04-26

Applicant: Brian J. Greene ,  William K. Henson ,  Judson R. Holt ,  Michael D. Steigerwalt ,  Kuldeep Amarnath ,  Rohit Pal ,  Johan W. Weijtmans

Inventor： Brian J. Greene ,  William K. Henson ,  Judson R. Holt ,  Michael D. Steigerwalt ,  Kuldeep Amarnath ,  Rohit Pal ,  Johan W. Weijtmans

IPC: H01L21/8222

CPC classification number: H01L29/66636 ,  H01L21/3247 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7848

Abstract: A low energy surface is formed by a high temperature anneal of the surfaces of trenches on each side of a gate stack. The material of the semiconductor layer reflows during the high temperature anneal such that the low energy surface is a crystallographic surface that is at a non-orthogonal angle with the surface normal of the semiconductor layer. A lattice mismatched semiconductor material is selectively grown on the semiconductor layer to fill the trenches, thereby forming embedded lattice mismatched semiconductor material portions in source and drain regions of a transistor. The embedded lattice mismatched semiconductor material portions can be in-situ doped without increasing punch-through. Alternately, a combination of intrinsic selective epitaxy and ion implantation can be employed to form deep source and drain regions.

Abstract translation: 低能量表面通过栅极堆叠的每一侧的沟槽表面的高温退火形成。 半导体层的材料在高温退火期间回流，使得低能表面是与半导体层的表面法线成非正交角的结晶表面。 在半导体层上选择性地生长晶格失配的半导体材料以填充沟槽，从而在晶体管的源极和漏极区域中形成嵌入的晶格失配的半导体材料部分。 嵌入的晶格不匹配的半导体材料部分可以原位掺杂而不增加穿通。 或者，可以采用固有选择性外延和离子注入的组合来形成深的源极和漏极区域。

公开(公告)号：US08294211B2

公开(公告)日：2012-10-23

申请号：US12687610

申请日：2010-01-14

Applicant: Bin Yang ,  Rohit Pal ,  Michael Hargrove

Inventor： Bin Yang ,  Rohit Pal ,  Michael Hargrove

IPC: H01L29/786

CPC classification number: H01L27/12 ,  H01L21/84 ,  H01L21/845 ,  H01L23/485 ,  H01L27/1211

Abstract: A method of fabricating a semiconductor device with back side conductive plugs is provided here. The method begins by forming a gate structure overlying a semiconductor-on-insulator (SOI) substrate. The SOI substrate has a support layer, an insulating layer overlying the support layer, an active semiconductor region overlying the insulating layer, and an isolation region outboard of the active semiconductor region. A first section of the gate structure is formed overlying the isolation region and a second section of the gate structure is formed overlying the active semiconductor region. The method continues by forming source/drain regions in the active semiconductor region, and thereafter removing the support layer from the SOI substrate. Next, the method forms conductive plugs for the gate structure and the source/drain regions, where each of the conductive plugs passes through the insulating layer.

Abstract translation: 此处提供制造具有背面导电插头的半导体器件的方法。 该方法通过形成覆盖绝缘体上半导体（SOI）衬底的栅极结构开始。 SOI衬底具有支撑层，覆盖在支撑层上的绝缘层，覆盖绝缘层的有源半导体区域和有源半导体区域外侧的隔离区域。 栅极结构的第一部分形成在隔离区域的上方，栅极结构的第二部分形成在有源半导体区域的上方。 该方法通过在有源半导体区域中形成源极/漏极区域继续，然后从SOI衬底去除支撑层。 接下来，该方法形成用于栅极结构和源极/漏极区域的导电插塞，其中每个导电插塞穿过绝缘层。

公开(公告)号：US08222673B2

公开(公告)日：2012-07-17

申请号：US12795683

申请日：2010-06-08

Applicant: Brian J. Greene ,  William K. Henson ,  Judson R. Holt ,  Michael D. Steigerwalt ,  Kuldeep Amarnath ,  Rohit Pal ,  Johan W. Weijtmans

Inventor： Brian J. Greene ,  William K. Henson ,  Judson R. Holt ,  Michael D. Steigerwalt ,  Kuldeep Amarnath ,  Rohit Pal ,  Johan W. Weijtmans

IPC: H01L21/02

CPC classification number: H01L29/66636 ,  H01L21/3247 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7848

Abstract: A low energy surface is formed by a high temperature anneal of the surfaces of trenches on each side of a gate stack. The material of the semiconductor layer reflows during the high temperature anneal such that the low energy surface is a crystallographic surface that is at a non-orthogonal angle with the surface normal of the semiconductor layer. A lattice mismatched semiconductor material is selectively grown on the semiconductor layer to fill the trenches, thereby forming embedded lattice mismatched semiconductor material portions in source and drain regions of a transistor. The embedded lattice mismatched semiconductor material portions can be in-situ doped without increasing punch-through. Alternately, a combination of intrinsic selective epitaxy and ion implantation can be employed to form deep source and drain regions.

Abstract translation: 低能量表面通过栅极堆叠的每一侧的沟槽表面的高温退火形成。 半导体层的材料在高温退火期间回流，使得低能表面是与半导体层的表面法线成非正交角的结晶表面。 在半导体层上选择性地生长晶格失配的半导体材料以填充沟槽，从而在晶体管的源极和漏极区域中形成嵌入的晶格失配的半导体材料部分。 嵌入的晶格不匹配的半导体材料部分可以原位掺杂而不增加穿通。 或者，可以采用固有选择性外延和离子注入的组合来形成深的源极和漏极区域。

公开(公告)号：US08124515B2

公开(公告)日：2012-02-28

申请号：US12469418

申请日：2009-05-20

Applicant: Man Fai Ng ,  Rohit Pal

Inventor： Man Fai Ng ,  Rohit Pal

IPC: H01L21/28 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/3215

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/32155 ,  H01L21/322 ,  H01L29/7833

Abstract: Improved semiconductor devices comprising metal gate electrodes are formed with reduced performance variability by reducing the initial high dopant concentration at the top portion of the silicon layer overlying the metal layer. Embodiments include reducing the dopant concentration in the upper portion of the silicon layer, by implanting a counter-dopant into the upper portion of the silicon layer, removing the high dopant concentration portion and replacing it with undoped or lightly doped silicon, and applying a gettering agent to the upper surface of the silicon layer to form a thin layer with the gettered dopant, which layer can be removed or retained.

Abstract translation: 通过降低覆盖在金属层上的硅层顶部的初始高掺杂剂浓度，形成包括金属栅电极的改进的半导体器件，具有降低的性能可变性。 实施例包括通过将反掺杂剂注入硅层的上部来去除高掺杂剂浓度部分并用未掺杂的或轻掺杂的硅代替它来减少硅层上部的掺杂剂浓度，并施加吸气 剂到硅层的上表面以形成具有吸收的掺杂剂的薄层，该层可以被去除或保留。

公开(公告)号：US08076209B2

公开(公告)日：2011-12-13

申请号：US12771948

申请日：2010-04-30

Applicant: Frank Bin Yang ,  Rohit Pal ,  Michael J. Hargrove

Inventor： Frank Bin Yang ,  Rohit Pal ,  Michael J. Hargrove

IPC: H01L21/336

CPC classification number: H01L29/7847 ,  H01L29/66636

Abstract: Methods for forming a semiconductor device comprising a silicon-comprising substrate are provided. One exemplary method comprises depositing a polysilicon layer overlying the silicon-comprising substrate, amorphizing the polysilicon layer, etching the amorphized polysilicon layer to form a gate electrode, etching recesses into the substrate using the gate electrode as an etch mask, depositing a stress-inducing layer overlying the gate electrode, annealing the silicon-comprising substrate to recrystallize the gate electrode, removing the stress-inducing layer, and epitaxially growing impurity-doped, silicon-comprising regions in the recesses.

Abstract translation: 提供了用于形成包括含硅衬底的半导体器件的方法。 一种示例性方法包括沉积覆盖含硅衬底的多晶硅层，使多晶硅层非晶化，蚀刻非晶化多晶硅层以形成栅电极，使用栅电极作为蚀刻掩模将凹陷蚀刻到衬底中，沉积应力诱导 覆盖栅极电极，退火含硅衬底以使栅电极重结晶，去除应力诱导层，以及在凹槽中外延生长杂质掺杂的含硅区域。