公开(公告)号：US20230096121A1

公开(公告)日：2023-03-30

申请号：US17882169

申请日：2022-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum JUNG ,  Kyung-Eun BYUN ,  Keunwook SHIN

IPC: H01L29/06 ,  H01L21/02

Abstract: A stacked structure may include a first material layer, a two-dimensional material layer on the first material layer, and a second material layer on the two-dimensional material layer. The two-dimensional material layer may include a plurality of holes that each expose a portion of the first material layer. The second material layer may be coupled to the first material layer through the plurality of holes.

公开(公告)号：US20230012899A1

公开(公告)日：2023-01-19

申请号：US17951474

申请日：2022-09-23

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Keunwook SHIN ,  Kibum KIM ,  Hyunmi KIM ,  Hyeonjin SHIN ,  Sanghun LEE

IPC: H01L23/538 ,  H01L29/16 ,  H01L23/532 ,  H01L23/00

Abstract: An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.

公开(公告)号：US20220399228A1

公开(公告)日：2022-12-15

申请号：US17545468

申请日：2021-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Minsu SEOL ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Hyeonjin SHIN

IPC: H01L21/768 ,  H01L23/532

Abstract: Disclosed are an interconnect structure, an electronic device including the same, and a method of manufacturing the interconnect structure. The interconnect structure includes a dielectric layer; a conductive interconnect on the dielectric layer; and a graphene cap layer on the conductive interconnect. The graphene cap layer contains graphene quantum dots, has a carbon content of 80 at % or more, and has an oxygen content of 15 at % or less.

公开(公告)号：US20220246718A1

公开(公告)日：2022-08-04

申请号：US17465213

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeonchoo CHO ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Hyeonjin SHIN

IPC: H01L29/04 ,  H01L29/49 ,  H01L23/522 ,  H01L29/16 ,  H01L29/161

Abstract: A semiconductor device is provided. The semiconductor device includes a metal layer, a semiconductor layer in electrical contact with the metal layer, a two-dimensional (2D) material layer disposed between the metal layer and the semiconductor layer and having a 2D crystal structure, and a metal compound layer disposed between the 2D material layer and the semiconductor layer.

公开(公告)号：US20210206643A1

公开(公告)日：2021-07-08

申请号：US17138194

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Changhyun KIM ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Eunkyu LEE

IPC: C01B32/186 ,  C01B32/194 ,  C23C16/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/513

Abstract: Provided is a method of selectively growing graphene. The method includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

公开(公告)号：US20210167183A1

公开(公告)日：2021-06-03

申请号：US17154354

申请日：2021-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Sanghyun JO ,  Keunwook SHIN ,  Hyeonjin SHIN

IPC: H01L29/51 ,  H01L21/02

Abstract: Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.

公开(公告)号：US20190161351A1

公开(公告)日：2019-05-30

申请号：US16183146

申请日：2018-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Changseok LEE ,  Changhyun KIM ,  Kyungeun BYUN ,  Seungwon LEE ,  Eunkyu LEE

IPC: C01B32/186 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50

Abstract: Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.

公开(公告)号：US20170033003A1

公开(公告)日：2017-02-02

申请号：US15172908

申请日：2016-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Seunggeol NAM ,  Seongjun PARK ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Jaeho LEE ,  Changseok LEE ,  Yeonchoo CHO

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L29/45

CPC classification number: H01L21/76846 ,  H01L21/28525 ,  H01L21/28568 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L29/45

Abstract: A multilayer structure includes a first material layer, a second material layer, and a diffusion barrier layer. The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.

Abstract translation: 多层结构包括第一材料层，第二材料层和扩散阻挡层。 第二材料层连接到第一材料层。 第二材料层与第一材料层间隔开。 扩散阻挡层在第一材料层和第二材料层之间。 扩散阻挡层可以包括二维（2D）材料。 2D材料可以是非石墨烯材料，例如具有2D晶体结构的金属硫族化物基材料。 第一材料层可以是半导体或绝缘体，第二材料层可以是导体。 多层结构的至少一部分可以构成电子设备的互连。

公开(公告)号：US20170025273A1

公开(公告)日：2017-01-26

申请号：US14984189

申请日：2015-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Minsu SEOL ,  Hyeonjin SHIN ,  Sangwon KIM ,  Seongjun PARK

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3215 ,  H01L21/02

CPC classification number: H01L21/0332 ,  H01L21/02118 ,  H01L21/02274

Abstract: A 2D material hard mask includes hydrogen, oxygen, and a 2D material layer having a layered crystalline structure. The 2D material layer may be a material layer including one of a carbon structure (for example, a graphene sheet) and a non-carbon structure.

Abstract translation: 2D材料硬掩模包括氢，氧和具有层状晶体结构的2D材料层。 2D材料层可以是包括碳结构（例如，石墨烯片）和非碳结构之一的材料层。

公开(公告)号：US20250089320A1

公开(公告)日：2025-03-13

申请号：US18955290

申请日：2024-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeonchoo CHO ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Hyeonjin SHIN

IPC: H01L29/04 ,  H01L23/522 ,  H01L29/16 ,  H01L29/161 ,  H01L29/49 ,  H01L29/78

Abstract: A semiconductor device is provided. The semiconductor device includes a metal layer, a semiconductor layer in electrical contact with the metal layer, a two-dimensional (2D) material layer disposed between the metal layer and the semiconductor layer and having a 2D crystal structure, and a metal compound layer disposed between the 2D material layer and the semiconductor layer.