EMBEDDED WAFER LEVEL OPTICAL SENSOR PACKAGING

    公开(公告)号:US20210399157A1

    公开(公告)日:2021-12-23

    申请号:US17344520

    申请日:2021-06-10

    Inventor: Jing-En LUAN

    Abstract: The present disclosure is directed to a sensor die with an embedded light sensor and an embedded light emitter as well as methods of manufacturing the same. The light emitter in the senor die is surrounded by a resin. The sensor die is incorporated into semiconductor device packages as well as methods of manufacturing the same. The semiconductor device packages include a first optically transmissive structure on the light sensor of the sensor die and a second optically transmissive structure on the light emitter of the sensor die. The first optically transmissive structure and the second optically transmissive structure cover and protect the light sensor and the light emitter, respectively. A molding compound is on a surface of a sensor die and covers sidewalls of the first and second optically transmissive structures on the sensor die.

    WAFER LEVEL PACKAGING FOR PROXIMITY SENSOR
    33.
    发明申请
    WAFER LEVEL PACKAGING FOR PROXIMITY SENSOR 有权
    用于接近传感器的水平包装

    公开(公告)号:US20160190380A1

    公开(公告)日:2016-06-30

    申请号:US14668309

    申请日:2015-03-25

    Inventor: Jing-En LUAN

    Abstract: A proximity sensor includes a semiconductor die, a light emitting assembly, a redistribution layer, and an encapsulating layer. A surface of the semiconductor die includes a sensor area and contact pads. A lens is positioned over the sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads that face the redistribution layer. A side of the redistribution layer includes contact pads. Electrical connectors place each of the contact pads of the semiconductor die in electrical communication with a respective one of the contact pads of the redistribution layer. The encapsulating layer is positioned on the redistribution layer and at least partially encapsulates the semiconductor die, the lens over the sensor area of the semiconductor die, and the light emitting assembly.

    Abstract translation: 接近传感器包括半导体管芯,发光组件,再分配层和封装层。 半导体管芯的表面包括传感器区域和接触焊盘。 透镜位于半导体管芯的传感器区域上方。 发光组件包括具有发光区域的发光器件,位于发光区域上方的透镜以及面向再分布层的接触焊盘。 再分布层的一侧包括接触垫。 电连接器使得半导体管芯的每个接触焊盘与再分配层的接触焊盘中的相应一个电连通。 封装层位于再分配层上,并且至少部分地封装半导体管芯,半导体管芯的传感器区域上的透镜以及发光组件。

    MOLDED PROXIMITY SENSOR
    34.
    发明申请
    MOLDED PROXIMITY SENSOR 审中-公开
    模制接近传感器

    公开(公告)号:US20160187483A1

    公开(公告)日:2016-06-30

    申请号:US14674650

    申请日:2015-03-31

    Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

    Abstract translation: 接近传感器包括印刷电路板基板,半导体管芯,电连接器,透镜,发光组件和封装层。 半导体管芯位于印刷电路板基板上方,其上表面背离印刷电路板基板。 每个电连接器与半导体管芯的接触焊盘和印刷电路板基板的相应接触焊盘电连通。 透镜位于半导体管芯的传感器区域上方。 发光组件包括具有发光区域的发光器件,位于发光区域上方的透镜以及面向印刷电路板衬底的接触焊盘。 封装层位于印刷电路板基板上,至少一个电连接器,半导体管芯,透镜和发光组件。

    IMAGE SENSING DEVICE WITH INTERCONNECT LAYER GAP AND RELATED METHODS
    35.
    发明申请
    IMAGE SENSING DEVICE WITH INTERCONNECT LAYER GAP AND RELATED METHODS 有权
    具有互连层的图像感测装置及相关方法

    公开(公告)号:US20160104738A1

    公开(公告)日:2016-04-14

    申请号:US14741561

    申请日:2015-06-17

    Inventor: Jing-En LUAN

    Abstract: An image sensing device may include an interconnect layer, an image sensor IC coupled to the interconnect layer and having an image sensing surface, and an IR filter aligned with the image sensing surface opposite the interconnect layer. The image sensing device may include a flexible interconnect layer aligned with the interconnect layer and having a flexible substrate extending laterally outwardly from the interconnect layer, and electrically conductive traces on the flexible substrate. The image sensing device may also include solder bodies coupling the interconnect layer and the flexible interconnect layer and also defining a gap between the interconnect layer and the flexible interconnect layer.

    Abstract translation: 图像感测装置可以包括互连层,耦合到互连层并具有图像感测表面的图像传感器IC和与互连层相对的图像感测表面对准的IR滤光器。 图像感测装置可以包括与互连层对准的柔性互连层,并且具有从互连层横向向外延伸的柔性衬底以及柔性衬底上的导电迹线。 图像感测装置还可以包括耦合互连层和柔性互连层并且还限定互连层和柔性互连层之间的间隙的焊料体。

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