公开(公告)号：US08580640B2

公开(公告)日：2013-11-12

申请号：US13706312

申请日：2012-12-05

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe Saggio ,  Edoardo Zanetti ,  Ferruccio Frisina

IPC: H01L21/336

CPC classification number: H01L29/7811 ,  H01L21/0485 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/7802

Abstract: An embodiment of a process for manufacturing an electronic device on a semiconductor body of a material with wide forbidden bandgap having a first conductivity type. The process comprises the steps of: forming, on the semiconductor body, a first mask having a first window and a second window above a first surface portion and a second surface portion of the semiconductor body; forming, within the first and second surface portions of the semiconductor body underneath the first and second windows, at least one first conductive region and one second conductive region having a second conductivity type, the first conductive region and the second conductive region facing one another; forming a second mask on the semiconductor body, the second mask having a plurality of windows above surface portions of the first conductive region and the second conductive region; forming, within the first conductive region and the second conductive region and underneath the plurality of windows, a plurality of third conductive regions having the first conductivity type; removing completely the first and second masks; performing an activation thermal process of the first, second, and third conductive regions at a high temperature; and forming body and source regions.

Abstract translation: 一种用于制造具有第一导电类型的具有宽禁带隙的材料的半导体本体上的电子器件的方法的实施例。 该方法包括以下步骤：在半导体本体上形成第一掩模，该第一掩模在半导体本体的第一表面部分和第二表面部分之上具有第一窗口和第二窗口; 在第一和第二窗口下面的半导体本体的第一和第二表面部分内形成具有第二导电类型的至少一个第一导电区域和一个第二导电区域，第一导电区域和第二导电区域彼此面对; 在所述半导体主体上形成第二掩模，所述第二掩模在所述第一导电区域和所述第二导电区域的表面部分上方具有多个窗口; 在所述第一导电区域和所述第二导电区域内以及所述多个窗口下方形成具有所述第一导电类型的多个第三导电区域; 彻底清除第一和第二掩模; 在高温下进行第一，第二和第三导电区域的激活热处理; 并形成体和源区。

公开(公告)号：US12249624B2

公开(公告)日：2025-03-11

申请号：US17225998

申请日：2021-04-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone Rascuná ,  Mario Giuseppe Saggio ,  Giovanni Franco

IPC: H01L29/45 ,  H01L21/268 ,  H01L29/16

Abstract: A method for manufacturing a SiC-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500° C. and 2600° C. so as to form a carbon-rich electrical-contact region at the implanted region. The carbon-rich electrical-contact region forms an ohmic contact.

公开(公告)号：US11798981B2

公开(公告)日：2023-10-24

申请号：US17346771

申请日：2021-06-14

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe Saggio ,  Angelo Magri' ,  Edoardo Zanetti ,  Alfio Guarnera

IPC: H01L29/06 ,  H01L29/16

CPC classification number: H01L29/0607 ,  H01L29/1608

Abstract: An electronic device includes a semiconductor body of silicon carbide, and a body region at a first surface of the semiconductor body. A source region is disposed in the body region. A drain region is disposed at a second surface of the semiconductor body. A doped region extends seamlessly at the entire first surface of the semiconductor body and includes one or more first sub-regions having a first doping concentration and one or more second sub-regions having a second doping concentration lower than the first doping concentration. Thus, the device has zones alternated to each other having different conduction threshold voltage and different saturation current.

公开(公告)号：US11177394B2

公开(公告)日：2021-11-16

申请号：US16841536

申请日：2020-04-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna'

IPC: H01L29/872 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L21/225 ,  H01L21/768 ,  H01L23/535 ,  H01L29/20

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

公开(公告)号：US10707202B2

公开(公告)日：2020-07-07

申请号：US16027060

申请日：2018-07-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuná

IPC: H01L29/47 ,  H01L27/06 ,  H01L29/872 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L21/04 ,  H01L29/08 ,  H01L29/423

Abstract: An integrated MOSFET device is formed in a body of silicon carbide and with a first type of conductivity. The body accommodates a first body region, with a second type of conductivity; a JFET region adjacent to the first body region; a first source region, with the first type of conductivity, extending into the interior of the first body region; an implanted structure, with the second type of conductivity, extending into the interior of the JFET region. An isolated gate structure lies partially over the first body region, the first source region and the JFET region. A first metallization layer extends over the first surface and forms, in direct contact with the implanted structure and with the JFET region, a JBS diode.

公开(公告)号：US10651319B2

公开(公告)日：2020-05-12

申请号：US16357186

申请日：2019-03-18

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna'

IPC: H01L21/8238 ,  H01L29/872 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L21/225 ,  H01L21/768 ,  H01L23/535 ,  H01L29/20

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

公开(公告)号：US09748411B2

公开(公告)日：2017-08-29

申请号：US15059779

申请日：2016-03-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna′

IPC: H01L31/0312 ,  H01L21/8238 ,  H01L29/872 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L21/225 ,  H01L21/768 ,  H01L23/535 ,  H01L29/20

CPC classification number: H01L29/872 ,  H01L21/2253 ,  H01L21/76897 ,  H01L23/535 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66143

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

公开(公告)号：US20170141191A1

公开(公告)日：2017-05-18

申请号：US15421100

申请日：2017-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simona Lorenti ,  Cateno Marco Camalleri ,  Mario Giuseppe Saggio ,  Ferruccio Frisina

IPC: H01L29/10 ,  H01L21/02 ,  H01L21/3065 ,  H01L27/088 ,  H01L29/04 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L21/324 ,  H01L29/06

CPC classification number: H01L21/3247 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/324 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611 ,  H01L29/872

Abstract: Process for manufacturing a semiconductor power device, wherein a trench is formed in a semiconductor body having a first conductivity type; the trench is annealed for shaping purpose; and the trench is filled with semiconductor material via epitaxial growth so as to obtain a first column having a second conductivity type. The epitaxial growth is performed by supplying a gas containing silicon and a gas containing dopant ions of the second conductivity type in presence of a halogenide gas and occurs with uniform distribution of the dopant ions. The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth; in particular, in the case of selective growth of the semiconductor material in the presence of a hard mask, the flow decreases; in the case of non-selective growth, in the absence of hard mask, the flow increases.

公开(公告)号：US20170062626A1

公开(公告)日：2017-03-02

申请号：US15059779

申请日：2016-03-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna'

IPC: H01L29/872 ,  H01L21/768 ,  H01L29/16 ,  H01L21/225 ,  H01L29/66 ,  H01L23/535

CPC classification number: H01L29/872 ,  H01L21/2253 ,  H01L21/76897 ,  H01L23/535 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66143

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

Abstract translation: 一种开关装置，包括：半导体材料体，其具有第一导电类型并由前表面限定; 第一导电材料的接触层，其与前表面接触地延伸; 以及具有第二导电类型并且布置在半导体主体内的距离接触层一定距离的多个掩埋区域。

公开(公告)号：US09142646B2

公开(公告)日：2015-09-22

申请号：US14645185

申请日：2015-03-11

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferruccio Frisina ,  Angelo Magri′ ,  Mario Giuseppe Saggio

IPC: H01L21/20 ,  H01L29/66 ,  H01L29/16 ,  H01L29/165 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L29/66666 ,  H01L21/02529 ,  H01L21/02532 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/267 ,  H01L29/402 ,  H01L29/66431 ,  H01L29/7811 ,  H01L29/7813

Abstract: An embodiment of an integrated electronic device formed in a semiconductor body delimited by a lateral surface, which includes: a substrate made of a first semiconductor material; a first epitaxial region made of a second semiconductor material, which overlies the substrate and defines a first surface; a second epitaxial region made of a third semiconductor material, which overlies the first surface and is in contact with the first epitaxial region, the third semiconductor material having a bandgap narrower than the bandgap of the second semiconductor material; an active area, extending within the second epitaxial region and housing at least one elementary electronic component; and an edge structure, arranged between the active area and the lateral surface, and including a dielectric region arranged laterally with respect to the second epitaxial region, which overlies the first surface and is in contact with the first epitaxial region.