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公开(公告)号：US11961898B2
公开(公告)日：2024-04-16
申请号：US17546303
申请日：2021-12-09
发明人： Van Luan Nguyen , Minsu Seol , Junyoung Kwon , Hyeonjin Shin , Minseok Yoo , Yeonchoo Cho
IPC分类号： H01L29/66 , H01L21/02 , H01L21/304 , H01L21/463
CPC分类号： H01L29/66045 , H01L21/02488 , H01L21/02491 , H01L21/02527 , H01L21/02568 , H01L21/304 , H01L21/463 , H01L29/66969
摘要： A method of patterning a 2D material layer is includes selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer, the first material layer having a strong adhesive force with a 2D material. The method further includes forming a 2D material layer is formed in both the first region and the second region. The method further includes selectively removing the 2D material layer from the second region based on using a physical removal method, such that the 2D material layer remains in the first region.
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32.发明授权公开(公告)号：US11588034B2
公开(公告)日：2023-02-21
申请号：US17060696
申请日：2020-10-01
发明人： Minhyun Lee , Minsu Seol , Ho Won Jang , Yeonchoo Cho , Hyeonjin Shin
IPC分类号： H01L29/423 , H01L29/04 , H01L29/06 , H01L29/16 , H01L29/66
摘要： Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.
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公开(公告)号：US11563116B2
公开(公告)日：2023-01-24
申请号：US17201485
申请日：2021-03-15
发明人： Minhyun Lee , Minsu Seol , Yeonchoo Cho , Hyeonjin Shin
IPC分类号： H01L29/778 , H01L29/24 , H01L29/786 , H01L29/417 , H01L27/092 , H01L29/78
摘要： A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.
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公开(公告)号：US11508814B2
公开(公告)日：2022-11-22
申请号：US17111965
申请日：2020-12-04
发明人： Minhyun Lee , Minsu Seol , Hyeonjin Shin
IPC分类号： H01L29/10 , H01L29/36 , H01L29/423
摘要： A transistor including at least one two-dimensional (2D) channel is disclosed. A transistor according to some example embodiments includes first to third electrodes separated from each other, and a channel layer that is in contact with the first and second electrodes, parallel to the third electrode, and includes at least one 2D channel. The at least one 2D channel includes at least two regions having different doping concentrations. A transistor according to some example embodiments includes: first to third electrodes separated from each other; a 2D channel layer that is in contact with the first and second electrodes and parallel to the third electrode; a first doping layer disposed under the 2D channel layer corresponding to the first electrode; and a second doping layer disposed under the 2D channel layer corresponding to the second electrode, wherein the first and second doping layers contact the 2D channel layer.
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公开(公告)号：US10777412B2
公开(公告)日：2020-09-15
申请号：US15874226
申请日：2018-01-18
发明人： Dongwook Lee , Sangwon Kim , Minsu Seol , Seongjun Park , Hyeonjin Shin , Yunseong Lee , Seongjun Jeong , Alum Jung
IPC分类号： H01L21/00 , H01B1/00 , H01L21/033 , G03F7/11 , G03F7/09 , H01B1/04 , C01B32/194 , H01L21/311 , B82Y30/00 , B82Y40/00
摘要： Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M—O—C bond or an M—C bond, where M is a metal element, O is oxygen, and C is carbon.
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公开(公告)号：US10681464B2
公开(公告)日：2020-06-09
申请号：US16173516
申请日：2018-10-29
发明人： Sangwon Kim , Hyeonjin Shin , Minsu Seol , Dongwook Lee
摘要： Provided are an acoustic diaphragm and an acoustic device including the same. The acoustic diaphragm may include graphene nanoparticles, and an average particle size of the graphene nanoparticles may be about 10 nm or less. The graphene nanoparticles substantially may have a particle size of about 1 nm to about 10 nm. The graphene nanoparticles may include at least one functional group selected from a hydroxyl group, a carboxyl group, a carbonyl group, an epoxy group, an amine group, and an amide group.
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公开(公告)号：US10424490B2
公开(公告)日：2019-09-24
申请号：US15805848
申请日：2017-11-07
发明人： Sangwon Kim , Minsu Seol , Hyeonjin Shin , Dongwook Lee , Seongjun Jeong
IPC分类号： H01L21/308 , C09D1/00 , C08K3/04 , C08K9/04 , G03F7/20 , G03F7/32 , G03F7/40 , C09D7/62 , C09D7/40 , C01B32/15 , C01B32/152 , H01L21/02 , H01L21/033 , H01L21/311 , C01B32/184 , C01B32/156 , G03F7/09
摘要： Provided are a hardmask composition and a method of forming a fine pattern using the hardmask composition, the hardmask composition including a solvent, a 2D carbon nanostructure (and/or a derivative thereof), and a 0D carbon nanostructure (and/or a derivative thereof).
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公开(公告)号：US10199958B2
公开(公告)日：2019-02-05
申请号：US15049726
申请日：2016-02-22
发明人： Hyeonjin Shin , Kyungeun Byun , Minsu Seol , Seongjun Park
摘要： A triboelectric generator includes first and second electrodes facing each other, and a first energy generation layer provided on the first electrode and generating electric energy through contact with other material, the first energy generation layer comprising a two-dimensional (2D) material having a crystal structure of a 2D shape.
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