公开(公告)号：US4313255A

公开(公告)日：1982-02-02

申请号：US105937

申请日：1979-12-21

申请人： Satoshi Shinozaki ,  Shinzi Saito

发明人： Satoshi Shinozaki ,  Shinzi Saito

IPC分类号： H01L21/76 ,  H01L21/033 ,  H01L21/225 ,  H01L21/331 ,  H01L29/73 ,  H01L21/425 ,  H01L21/74

CPC分类号： H01L29/66272 ,  H01L21/033 ,  H01L21/2257

摘要： Disclosed is a method for manufacturing an integrated circuit device which comprises the steps of preparing a silicon substrate having an isolated first region of a first conductivity type, selectively forming on the first region a polycrystalline silicon layer containing an impurity of the first conductivity type, implanting the first region including the polycrystalline silicon layer with an ion of an impurity of a second conductivity type having higher diffusion coefficient than that of the impurity of the first conductivity type, and heating the substrate, whereby the implanted impurity of the second conductivity type is diffused into the first region to form a second region of the second conductivity type and the impurity of the first conductivity type in the polycrystalline silicon layer is diffused into the second region to form a third region of the first conductivity type.

摘要翻译： 公开了一种用于制造集成电路器件的方法，其包括以下步骤：制备具有第一导电类型的隔离的第一区域的硅衬底，在第一区域上选择性地形成含有第一导电类型杂质的多晶硅层， 所述第一区域包括具有比所述第一导电类型的杂质更高的扩散系数的具有第二导电类型的杂质的离子的多晶硅层，并且加热所述衬底，由此所述第二导电类型的注入杂质扩散 进入第一区域以形成第二导电类型的第二区域，并且多晶硅层中的第一导电类型的杂质扩散到第二区域中以形成第一导电类型的第三区域。

公开(公告)号：US4058419A

公开(公告)日：1977-11-15

申请号：US644294

申请日：1975-12-24

申请人： Yukuya Tokumaru ,  Masanori Nakai ,  Satoshi Shinozaki ,  Junichi Nakamura ,  Shintaro Ito ,  Yoshio Nishi

发明人： Yukuya Tokumaru ,  Masanori Nakai ,  Satoshi Shinozaki ,  Junichi Nakamura ,  Shintaro Ito ,  Yoshio Nishi

IPC分类号： H01L21/033 ,  H01L21/8226 ,  H01L27/02 ,  H01L21/22 ,  H01L21/76 ,  H01L27/04

CPC分类号： H01L21/8226 ,  H01L21/033 ,  H01L27/0233

摘要： A P type semiconductor layer is formed on an N type semiconductor layer by vapour epitaxial growth technique, an insulating film is formed on the P type semiconductor layer and a grid shape first opening is provided through the insulating film. Then, phosphorus is diffused into the P type semiconductor layer through the grid shape opening to form a first N type region extending through the semiconductor layer to reach the N type semiconductor layer. Then, second openings are formed through respective sections of the insulating film divided by and surrounded by the grid shape first opening and boron is diffused through the first and second openings to form first and second P type regions in the grid shape first N type region and the P type semiconductor layer, respectively. Finally, third openings are formed through respective portions of the insulating film and phosphorus is diffused into the P type semiconductor layer through the third openings to form second N type regions thereby forming an integrated injection logic semiconductor device including a lateral PNP transistor and a vertical NPN transistor.

摘要翻译： 通过蒸气外延生长技术在N型半导体层上形成P型半导体层，在P型半导体层上形成绝缘膜，通过绝缘膜设置栅格状的第一开口。 然后，磷通过栅格形状开口扩散到P型半导体层中，以形成延伸穿过半导体层的第一N型区域到达N型半导体层。 然后，通过由栅格形状的第一开口分隔并被其包围的绝缘膜的各个部分形成第二开口，并且硼通过第一和第二开口扩散，以形成网格形状的第一N型区域中的第一和第二P型区域， P型半导体层。 最后，通过绝缘膜的各部分形成第三开口，并且磷通过第三开口扩散到P型半导体层中，以形成第二N型区域，从而形成包括横向PNP晶体管和垂直NPN的集成注入逻辑半导体器件 晶体管。

公开(公告)号：US08728459B2

公开(公告)日：2014-05-20

申请号：US12281560

申请日：2007-03-02

申请人： Tsuyoshi Isawa ,  Michiko Yasuda ,  Satoshi Shinozaki ,  Hideo Nakashita ,  Toshiaki Kudo

发明人： Tsuyoshi Isawa ,  Michiko Yasuda ,  Satoshi Shinozaki ,  Hideo Nakashita ,  Toshiaki Kudo

IPC分类号： A61K35/74 ,  A01H5/00 ,  C12N1/20 ,  A01N63/02

CPC分类号： C12R1/01 ,  A01H17/00 ,  A01N63/00 ,  Y02A40/15

摘要： An object of the present invention is to provide a means for imparting resistance against pathogenic fungal, pathogenic bacterial, or pathogenic viral disease to agriculturally useful plants. The present invention relates to a bacterium belonging to the genus Azospirillum or the genus Herbaspirillum capable of imparting resistance against pathogenic fungal, pathogenic bacterial, or pathogenic viral disease to a host plant by living symbiotically within the plant, a method for controlling plant disease using the bacteria, and plants produced by such method.

摘要翻译： 本发明的一个目的是提供一种赋予农业上有用植物抗病原真菌，病原性细菌或病原性病毒抗性的方法。 本发明涉及属于Azospirillum属或Herbaspirillum属的细菌，其能够通过在植物内共生生物将宿主植物赋予致病性真菌，致病性细菌或病原性病毒病抗性，使用该方法控制植物病害 细菌和通过这种方法生产的植物。

公开(公告)号：US08017111B2

公开(公告)日：2011-09-13

申请号：US12073482

申请日：2008-03-06

申请人： Takahiro Imada ,  Naoya Hiruma ,  Yousuke Kurihara ,  Satoshi Shinozaki ,  Miho Shimaike ,  Junya Mizutani

发明人： Takahiro Imada ,  Naoya Hiruma ,  Yousuke Kurihara ,  Satoshi Shinozaki ,  Miho Shimaike ,  Junya Mizutani

IPC分类号： A01N63/00

CPC分类号： C12R1/645 ,  A01N63/04 ,  C12N1/14 ,  Y02A40/15

摘要： A method of introducing a symbiotic fungus producing one chanoclavine as a final metabolic product into a plant, includes the steps of isolating symbiotic fungi from naturally existing plants, artificially cultivating the isolated symbiotic fungi, introducing the cultivated symbiotic fungi into target plants, infecting the target plants with the introduced symbiotic fungi, determining whether the introduced symbiotic fungi infecting the target plants produce the chanoclavine as the final metabolic product, and selecting the target plants which produce the chanoclavine as the final metabolic product.

摘要翻译： 将产生一种chanoclavine作为最终代谢产物的共生真菌引入植物中的方法包括从天然存在的植物中分离共生真菌的步骤，人工培养分离的共生真菌，将培养的共生真菌引入靶植物，感染靶 植物与引入的共生真菌，确定引入的感染目标植物的共生真菌是否产生chanoclavine作为最终的代谢产物，以及选择产生chanoclavine作为最终代谢产物的目标植物。

公开(公告)号：US20110033210A1

公开(公告)日：2011-02-10

申请号：US12850014

申请日：2010-08-04

申请人： Satoshi Shinozaki ,  Daisuke Baba

发明人： Satoshi Shinozaki ,  Daisuke Baba

IPC分类号： G03G15/09

CPC分类号： G03G15/0877 ,  G03G15/0865 ,  G03G2215/0844 ,  G03G2215/085

摘要： A developing device includes a developing container for accommodating a developer; a developer carrying member, provided rotatably in the developing container, for carrying and feeding the developer to develop an electrostatic image; a developer feeding member, including an elastic feeding portion and being rotatably provided in the developing container, for feeding the developer in the developing container toward the developer carrying member; and a circulation changing member for changing circulation of the developer in the neighborhood of the developer carrying member. In a plane perpendicular to a rotational axis of the developer carrying member, the circulation changing member is provided in a maximum rotation area of the developer feeding member so as to create a gap between itself and an entire inner surface of the developing container and a gap between itself and the developer carrying member.

摘要翻译： 显影装置包括用于容纳显影剂的显影容器; 显影剂承载构件，其可旋转地设置在显影容器中，用于承载和供给显影剂以显影静电图像; 显影剂供给构件，包括弹性进给部分，并且可旋转地设置在显影容器中，用于将显影剂的显影剂供给显影剂承载构件; 以及用于改变显影剂承载构件附近的显影剂的循环的循环改变构件。 在垂直于显影剂承载构件的旋转轴线的平面中，循环改变构件设置在显影剂供给构件的最大旋转区域中，以便在其与显影容器的整个内表面之间产生间隙， 在它们与显影剂承载构件之间。

公开(公告)号：US07771766B2

公开(公告)日：2010-08-10

申请号：US11556950

申请日：2006-11-06

申请人： Shinji Kouno ,  Kou Ishikura ,  Satoshi Shinozaki

发明人： Shinji Kouno ,  Kou Ishikura ,  Satoshi Shinozaki

IPC分类号： A21D15/02

CPC分类号： A23L3/365 ,  A21D15/02

摘要： An apparatus and a method for freeze-storing baked foods allow the baked foods to retain excellent crust condition (surface layer of baked foods), avoiding any peeling, and retain excellent sensory condition, attaining long-term frozen storage. Baked foods, including baked bread and baked confectionery, are frozen in a humidified atmosphere, cooled to 30 to 35° C. in terms of core temperature, and subjected to a high-humidity cooling process conducted in an atmosphere, where even upon receiving high-temperature baked foods after baking, 20 to 28° C. and ≧65% RH, high humidity condition can be maintained, and further subjected to a frozen storage process where the baked foods are freeze stored at low temperature of ≦freezing temperature.

摘要翻译： 用于冷冻储存烘焙食品的装置和方法允许烘焙食品保持优异的外壳状况（烘烤食品的表面层），避免任何剥离，并保持优异的感官条件，实现长期冷冻保存。 烘烤食品，包括烘烤的面包和烘烤的糖果，在湿润的气氛中冷冻，以核心温度冷却至30至35℃，并进行在大气中进行的高湿度冷却过程，即使在高温 烘烤后的温度烘烤食品，20〜28℃，≥65％RH，高湿度条件，并进一步进行冷冻保存处理，其中烘烤食品在低温冷冻下冷冻保存。

公开(公告)号：US20060249771A1

公开(公告)日：2006-11-09

申请号：US11480553

申请日：2006-07-05

申请人： Satoshi Shinozaki ,  Mitsuteru Iijima ,  Hideo Kurihara

发明人： Satoshi Shinozaki ,  Mitsuteru Iijima ,  Hideo Kurihara

IPC分类号： H01L21/8242 ,  H01L29/94

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923

摘要： A proposed non-volatile semiconductor memory and a method of manufacturing the same are directed to performing stable and highly reliable operations. First, grooves are formed in a p-type silicon semiconductor substrate, and impurity diffusion layers are formed on the bottom surfaces of the grooves. A gate insulating film is then formed on the p-type silicon semiconductor substrate. This gate insulating film has a three-layer structure in which a first insulating film made of a silicon oxide film, a charge capturing film made of a silicon nitride film, and a second insulating film made of a silicon oxide film, are laminated in this order. A gate electrode is then formed on the gate insulating film. A convexity formed by the grooves serves as the channel region of the non-volatile semiconductor memory. Even if the device size is reduced, an effective channel length can be secured in this non-volatile semiconductor memory. Thus, excellent stability and reliability can be achieved.

公开(公告)号：US06180855B2

公开(公告)日：2001-01-30

申请号：US09219829

申请日：1998-12-23

申请人： Naoya Hiruma ,  Satoshi Shinozaki

发明人： Naoya Hiruma ,  Satoshi Shinozaki

IPC分类号： A01H300

CPC分类号： A01N63/04

摘要： To provide a grass having improved characteristics, an endophyte having endophytic fungi which produce an insect-resistant alkaloid is artificially introduced into a grass by inoculation so that the endophyte lives in and infects the grass.

摘要翻译： 为了提供具有改善特征的草，具有产生抗虫生物碱的内生真菌的内生真菌通过接种被人工引入草中，使得内生真菌生活并感染草。

公开(公告)号：USPP11428P

公开(公告)日：2000-06-27

申请号：US938751

申请日：1997-09-26

申请人： Satoshi Shinozaki ,  Hiroyuki Sano ,  Naoya Hiruma ,  Takahiro Imada ,  Munehiro Noda ,  Fumiyoshi Akaike ,  Sachiko Yamashima ,  Madoka Kon

发明人： Satoshi Shinozaki ,  Hiroyuki Sano ,  Naoya Hiruma ,  Takahiro Imada ,  Munehiro Noda ,  Fumiyoshi Akaike ,  Sachiko Yamashima ,  Madoka Kon

摘要： The present invention relates to a variety obtained by selecting and cross-breeding those individuals producing the insect resistance substance peramine from Glyceria ischyroneura Steud. growing wild in various districts of Japan.

公开(公告)号：US4950617A

公开(公告)日：1990-08-21

申请号：US296307

申请日：1989-01-12

申请人： Jumpei Kumagai ,  Satoshi Shinozaki

发明人： Jumpei Kumagai ,  Satoshi Shinozaki

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/08 ,  H01L29/78

CPC分类号： H01L29/7836 ,  H01L27/0266 ,  H01L29/0847

摘要： This invention discloses a semiconductor integrated circuit in which an input protecting circuit and an inner circuit are formed on a single semiconductor substrate and a MOS transistor of the inner circuit is formed by mask-alignment. The source and drain regions of the MOS transistor of the input protecting circuit are formed by self-alignment, so that the impurity concentration of the source and drain regions is increased and the diffusion resistance thereof is reduced, thereby increasing the junction breakdown power caused by a drain current. In addition, the radii of curvature of the junction curved surface portions of the source and drain regions of the MOS transistor of the input protecting circuit are increased so as to reduce the electric field intensity at the junction curved surface portions, thereby improving the junction breakdown withstand characteristics.