公开(公告)号：US5612739A

公开(公告)日：1997-03-18

申请号：US610577

申请日：1996-03-07

申请人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu

发明人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/378

CPC分类号： H04N5/361 ,  H04N5/37213 ,  H04N5/3728

摘要： A charge transfer device including a charge input portion for inputting a reference charge, a charge transfer portion for receiving and transferring the reference charge, and a conversion portion converting the reference charge outputted from the charge transfer portion into a reference voltage. The reference charge input portion may be arranged to generate a reference charge. Alternatively, the reference charge may be externally generated. The charge transfer device may further include a signal charge input portion for inputting signal charges to the charge transfer portion. The signal charge input portion may be arranged to generate signal charges corresponding to incident light. Signal charges externally generated may be inputted to the signal charge input portion. The charge transfer device enables a charge-output voltage characteristic to be accurately detected at all times without any problem. It is also possible to accurately control the charge-output voltage characteristic.

摘要翻译： 一种电荷转移装置，包括用于输入参考电荷的电荷输入部分，用于接收和转移参考电荷的电荷转移部分，以及将从电荷转移部分输出的参考电荷转换为参考电压的转换部分。 参考电荷输入部分可以被布置成产生参考电荷。 或者，可以从外部产生参考电荷。 电荷转移装置还可以包括用于向电荷转移部分输入信号电荷的信号电荷输入部分。 信号电荷输入部分可以被布置成产生对应于入射光的信号电荷。 外部产生的信号电荷可以被输入到信号电荷输入部分。 电荷转移装置能够始终没有任何问题地一直准确地检测电荷输出电压特性。 也可以精确地控制充放电电压特性。

公开(公告)号：US5539226A

公开(公告)日：1996-07-23

申请号：US476028

申请日：1995-06-07

申请人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

发明人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

IPC分类号： H01L29/423 ,  H01L29/768 ,  H01L27/148

CPC分类号： H01L29/42396 ,  H01L29/76816

摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.

摘要翻译： 一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷， 输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压， 栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端 栅极区域具有第二输出栅极电极 在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

公开(公告)号：US5189499A

公开(公告)日：1993-02-23

申请号：US771867

申请日：1991-10-08

申请人： Akio Izumi ,  Yasuhito Maki ,  Tadakuni Narabu ,  Maki Sato ,  Takaji Otsu ,  Katsuyuki Saito

发明人： Akio Izumi ,  Yasuhito Maki ,  Tadakuni Narabu ,  Maki Sato ,  Takaji Otsu ,  Katsuyuki Saito

IPC分类号： H01F7/06 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/105 ,  H01L29/51

CPC分类号： H01L21/28202 ,  H01L21/8234 ,  H01L27/1057 ,  H01L29/513 ,  H01L29/518

摘要： A charge-coupled device has a multi-layer structure insulating layer is formed beneath a transfer electrode, floating electrodes and an electrode adjacent the floating electrodes so that pin hole phenomenon in a charge transfer section of the charge coupled device can be successfully prevented. On the other hand, a sole-layer structure insulating layer is formed beneath a gate electrode of a peripheral component so that a threshold voltage of the gate electrode of the peripheral component can be successfully controlled at a desired value.

摘要翻译： 电荷耦合器件具有在传输电极，浮置电极和邻近浮置电极的电极之下形成的多层结构绝缘层，从而可以成功地防止电荷耦合器件的电荷转移部分中的针孔现象。 另一方面，在周边部件的栅电极的下方形成底层结构绝缘层，使得能够成功地将外围部件的栅电极的阈值电压控制在期望值。

公开(公告)号：US4939560A

公开(公告)日：1990-07-03

申请号：US331000

申请日：1989-03-29

申请人： Tadakuni Narabu ,  Yasuhito Maki ,  Tetsuya Kondo

发明人： Tadakuni Narabu ,  Yasuhito Maki ,  Tetsuya Kondo

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L29/768

CPC分类号： H01L29/76816

摘要： A charge transfer device, suitable for use, for example, in a solid state imager device, having a floating gate electrode in a charge detecting section, a protruding portion provided in at least one of the floating gate electrodes or a gate electrode arranged adjacent to the floating gate electrode, wherein the floating gate electrode and the gate electrode arranged adjacent to the floating gate electrode overlap each other at the protruding portion within an insulating layer, and whereby the parasitic capacitance associated with the floating gate electrode is decreased and the charge voltage converting gain is increased, rendering it possible to obtain an image signal with a good signal/noise ratio, when the charge transfer device is used for a solid state imager device.

摘要翻译： 一种电荷转移装置，适用于例如在固态成像器装置中，在电荷检测部分中具有浮置栅极电极，设置在至少一个浮栅电极中的突出部分或邻近 所述浮置栅极电极，其中与所述浮栅相邻配置的所述浮栅电极和所述栅电极在绝缘层内的所述突出部分处彼此重叠，由此与所述浮栅相关联的寄生电容降低，并且所述充电电压 当电荷转移装置用于固态成像装置时，转换增益增加，使得可以获得具有良好信号/噪声比的图像信号。

公开(公告)号：US08169572B2

公开(公告)日：2012-05-01

申请号：US11902838

申请日：2007-09-26

申请人： Go Yamanaka ,  Masafumi Matsui ,  Mitsuru Tateuchi ,  Yasuhito Maki ,  Yoshiharu Nakajima

发明人： Go Yamanaka ,  Masafumi Matsui ,  Mitsuru Tateuchi ,  Yasuhito Maki ,  Yoshiharu Nakajima

IPC分类号： G02F1/1343 ,  G02F1/135 ,  G06F3/042

CPC分类号： G02F1/136209 ,  G02F1/13318 ,  G02F2001/13312 ,  G02F2001/136218

摘要： A display apparatus includes: at least one pixel section including a display cell that has a pixel electrode and a light-receiving cell that has a light-receiving element; and a shielding electric conductor configured to electrically shield the pixel electrode on the side of the display cell from the light-receiving element. The shielding electric conductor is formed between the pixel electrode and the light-receiving element and has a fixed potential.

摘要翻译： 显示装置包括：至少一个像素部分，包括具有像素电极的显示单元和具有光接收元件的光接收单元; 以及屏蔽电导体，被配置为将显示单元侧的像素电极与光接收元件电屏蔽。 屏蔽电导体形成在像素电极和光接收元件之间并具有固定电位。

公开(公告)号：US06590570B1

公开(公告)日：2003-07-08

申请号：US09567231

申请日：2000-05-09

申请人： Yasuhito Maki

发明人： Yasuhito Maki

IPC分类号： G09G500

CPC分类号： H03K5/249 ,  G11C27/024

摘要： A comparator which can operate stably against an absolute value distribution of a threshold voltage among MOS transistors and has a wide allowable range against the threshold voltage dispersion and besides allows reduction in power consumption. The comparator employs a single MOS transistor, and a resistance element is connected between the drain electrode of the MOS transistor and a power supply. A capacitor is connected between the gate electrode of the MOS transistor and a dc potential point, and a switch is connected between the gate electrode and the drain electrode. A comparison reference level and comparison input data are inputted in a time series to the source electrode of the MOS transistor, and the MOS transistor performs a comparation operation.

摘要翻译： 一种比较器，其能够稳定地抵抗MOS晶体管之间的阈值电压的绝对值分布，并且相对于阈值电压分散具有宽的容许范围，并且还允许降低功耗。 比较器采用单个MOS晶体管，并且电阻元件连接在MOS晶体管的漏极和电源之间。 电容器连接在MOS晶体管的栅电极和直流电位之间，开关连接在栅电极和漏电极之间。 比较参考电平和比较输入数据以时间序列输入到MOS晶体管的源电极，并且MOS晶体管执行比较操作。

公开(公告)号：US5801850A

公开(公告)日：1998-09-01

申请号：US677471

申请日：1996-07-10

申请人： Yasuhito Maki ,  Motoaki Abe ,  Tadakuni Narabu ,  Hideo Nomura

发明人： Yasuhito Maki ,  Motoaki Abe ,  Tadakuni Narabu ,  Hideo Nomura

IPC分类号： H04N1/028 ,  H04N5/341 ,  H04N5/361 ,  H04N5/372 ,  H04N5/376 ,  H04N5/335

CPC分类号： H04N3/1581

摘要： A linear sensor for sampling vertically opposed pixels of a plurality of vertically arranged sensor rows substantially at a time. A plurality of horizontal transfer registers and a plurality of shift gates are provided to oppose the plurality of sensor rows. A vertical transfer register is provided at one end of the plurality of horizontal transfer registers. In the vertical transfer register, the signal charges which have been transferred by the plurality of horizontal transfer registers are transferred sequentially in vertical direction. A charge/voltage converter unit is provided at the output of the vertical transfer register. The signal charges accumulated in the vertically opposed pixels are sequentially transferred to the charge/voltage converter unit in a repetitive manner.

摘要翻译： 一种线性传感器，用于基本上每次对多个垂直布置的传感器行的垂直相对的像素进行采样。 提供多个水平传送寄存器和多个移位门以与多个传感器行相对。 在多个水平传送寄存器的一端设置垂直传送寄存器。 在垂直传送寄存器中，由多个水平传送寄存器传送的信号电荷在垂直方向依次传送。 在垂直传输寄存器的输出端提供一个充电/电压转换器单元。 累积在垂直相对的像素中的信号电荷被重复地依次传送到电荷/电压转换器单元。

公开(公告)号：US5777671A

公开(公告)日：1998-07-07

申请号：US586304

申请日：1996-01-17

申请人： Yasuhito Maki ,  Tetsuro Goto ,  Tadao Takagi ,  Hiroyuki Iwasaki

发明人： Yasuhito Maki ,  Tetsuro Goto ,  Tadao Takagi ,  Hiroyuki Iwasaki

IPC分类号： H04N1/028 ,  H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/357 ,  H04N5/361 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/376 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N5/361 ,  H04N5/3698 ,  H04N5/372 ,  H04N5/3692 ,  H04N5/3728

摘要： A control circuit generates a control signal which is of a low level during a certain period of time after the power supply of a solid state imager has been turned on or a power save mode thereof has been canceled, and of a high level after elapse of the period of time. Based on the control signal, a timing generator generates transfer clock signals having a high frequency than when the solid state imager is in a normal transfer mode, and applies the transfer clock signals to a CCD shift register to remove or transfer excessive invalid charges at a high rate therefrom. After the power supply has been turned on or the power save mode has been canceled, therefore, the time required to bring the solid state imager into a condition capable of imaging a subject is shortened.

摘要翻译： 控制电路在固态成像器的电源接通或其省电模式被取消之后的一段时间内产生低电平的控制信号，并且在经过 这段时间。 基于控制信号，定时发生器生成具有比固态成像器处于正常传送模式时高的频率的传送时钟信号，并且将传送时钟信号施加到CCD移位寄存器，以去除或传送过多的无效电荷 高比率。 因此，在电源接通或省电模式被取消之后，缩短固态成像器成为能够成像对象的状态所需的时间。

公开(公告)号：US5640028A

公开(公告)日：1997-06-17

申请号：US554344

申请日：1995-11-06

申请人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

发明人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

IPC分类号： H01L29/423 ,  H01L29/768 ,  H01L27/148

CPC分类号： H01L29/42396 ,  H01L29/76816

摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.

摘要翻译： 一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷， 输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压， 栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端 栅极区域具有第二输出栅极电极 在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

公开(公告)号：US5600451A

公开(公告)日：1997-02-04

申请号：US288038

申请日：1994-08-10

申请人： Yasuhito Maki

发明人： Yasuhito Maki

IPC分类号： H01L21/339 ,  H01L27/14 ,  H01L29/762 ,  H04N1/028 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N1/04

CPC分类号： H04N5/357

摘要： A charge transfer device is disclosed. The charge transfer device has: a charge transfer section for outputting a signal charge; a voltage signal output circuit for converting the signal charge into a voltage and outputting a voltage signal; a reference signal output circuit for outputting a reference signal of a predetermined voltage, the reference signal output circuit having a circuit constant substantially equal to a circuit constant of the voltage signal output circuit; and a differential operational amplifying circuit for amplifying a difference between the voltage signal from the voltage signal output circuit and the reference signal from the reference signal output circuit and outputting the amplified difference.

摘要翻译： 公开了电荷转移装置。 电荷转移装置具有：输出信号电荷的电荷转移部; 电压信号输出电路，用于将信号电荷转换为电压并输出电压信号; 用于输出预定电压的参考信号的参考信号输出电路，所述参考信号输出电路具有基本上等于所述电压信号输出电路的电路常数的电路常数; 以及差分运算放大电路，用于放大来自电压信号输出电路的电压信号与来自参考信号输出电路的参考信号之间的差值，并输出放大的差值。