公开(公告)号：US09099117B2

公开(公告)日：2015-08-04

申请号：US14220396

申请日：2014-03-20

Applicant: Seagate Technology LLC

Inventor： James Gary Wessel ,  Sarbeswar Sahoo ,  Michael Christopher Kautzky

IPC: G11B5/00 ,  G11B5/31 ,  G11B5/127 ,  G11B5/60 ,  G02B6/122 ,  G02B5/00

CPC classification number: G11B5/3163 ,  G02B5/008 ,  G02B6/1226 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/4866 ,  G11B5/6088 ,  G11B2005/0021

Abstract: A near field transducer with a peg region, an enlarged region disposed adjacent the peg region, and a barrier material disposed between the peg region and the enlarged region. The barrier material reduces or eliminates interdiffusion of material between the peg region and the enlarged region.

Abstract translation: 具有钉区域的近场换能器，邻近栓钉区域设置的放大区域，以及设置在钉区域和扩大区域之间的阻挡材料。 阻挡材料减少或消除了钉住区域和扩大区域之间材料的相互扩散。

公开(公告)号：US20150213819A1

公开(公告)日：2015-07-30

申请号：US14163632

申请日：2014-01-24

Applicant: Seagate Technology LLC

Inventor： Nils Gokemeijer ,  Edward Charles Gage ,  Roger L. Hipwell ,  Michael Christopher Kautzky ,  Scott Eugene Olson

IPC: G11B5/48

CPC classification number: G11B5/4866 ,  G11B5/105 ,  G11B5/6088 ,  G11B2005/0021

Abstract: An apparatus that includes a slider having a mounting surface, the mounting surface opposite a media-facing surface of the slider. The apparatus includes a laser diode mounted on a side surface to the mounting surface. The laser diode has an active region of the laser diode is disposed substantially perpendicular to the mounting surface.

Abstract translation: 一种装置，包括具有安装表面的滑块，所述安装表面与所述滑块的面向介质的表面相对。 该装置包括安装在安装表面的侧表面上的激光二极管。 激光二极管具有基本上垂直于安装表面设置的激光二极管的有源区。

公开(公告)号：US20140376342A1

公开(公告)日：2014-12-25

申请号：US14220396

申请日：2014-03-20

Applicant: Seagate Technology LLC

Inventor： James Gary Wessel ,  Sarbeswar Sahoo ,  Michael Christopher Kautzky

IPC: G11B5/48 ,  G11B5/127

CPC classification number: G11B5/3163 ,  G02B5/008 ,  G02B6/1226 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/4866 ,  G11B5/6088 ,  G11B2005/0021

Abstract: A near field transducer with a peg region, an enlarged region disposed adjacent the peg region, and a barrier material disposed between the peg region and the enlarged region. The barrier material reduces or eliminates interdiffusion of material between the peg region and the enlarged region.

公开(公告)号：US20140050058A1

公开(公告)日：2014-02-20

申请号：US14062675

申请日：2013-10-24

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Jie Zou ,  Kaizhong Gao ,  William Albert Challener ,  Mark Henry Ostrowski ,  Venkateswara Rao Inturi ,  Tong Zhao ,  Michael Christopher Kautzky

IPC: G11B11/105

CPC classification number: G11B11/10534 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3136 ,  G11B5/314 ,  G11B2005/0021

Abstract: An apparatus including a near field transducer positioned adjacent to an air bearing surface, the near field transducer including an electrically conductive nitride; a first magnetic pole; and a heat sink, a diffusion barrier layer, or both positioned between the first magnetic pole and the near field transducer, wherein the heat sink, the diffusion barrier or both include rhodium (Rh) or an alloy thereof; ruthenium (Ru) or an alloy thereof titanium (Ti) or an alloy thereof tantalum (Ta) or an alloy thereof tungsten (W) or an alloy thereof borides; nitrides; transition metal oxides; or palladium (Pd) or an alloy thereof.

Abstract translation: 一种包括邻近空气轴承表面定位的近场换能器的装置，所述近场换能器包括导电氮化物; 第一个磁极; 以及位于第一磁极和近场换能器之间的散热器，扩散阻挡层或两者，其中散热器，扩散阻挡层或二者均包括铑（Rh）或其合金; 钌（Ru）或其合金钛（Ti）或其合金钽（Ta）或其合金钨（W）或其合金硼化物; 氮化物 过渡金属氧化物; 或钯（Pd）或其合金。

公开(公告)号：US12249357B2

公开(公告)日：2025-03-11

申请号：US18410008

申请日：2024-01-11

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

Abstract: A method involves forming a metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. A surface of the metal layer defines a first metal bonding layer. A second metal bonding layer is provided on a target substrate having recording head subassemblies. Mating surfaces of the first and second metal bonding layers are activated and the carrier wafer is flipped and joined with the target substrate such that the first and second metal bonding layers are bonded and the metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US20240339125A1

公开(公告)日：2024-10-10

申请号：US18750002

申请日：2024-06-21

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  B81C1/00 ,  B82B1/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B11/24 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/67

CPC classification number: G11B5/3163 ,  B81C1/00111 ,  B82B1/003 ,  G11B5/3133 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y10/00 ,  G11B2005/0021 ,  G11B11/24 ,  H01L21/32136

Abstract: A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a thickness; and ion beam milling the layer of the template material to remove thickness less than the first thickness. The ion beam milling may be performed at a two different angles during two different repetitions. At least one of the angles is a channeling angle defined relative to a crystalline microstructure of the template material. After the repetitions, additional material may be deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

公开(公告)号：US11935567B2

公开(公告)日：2024-03-19

申请号：US17877434

申请日：2022-07-29

Applicant: Seagate Technology LLC.

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

CPC classification number: G11B5/314 ,  C30B25/04 ,  G11B5/105 ,  G11B5/1272 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/84 ,  G11B7/124 ,  H01L33/0093 ,  G11B2005/0021 ,  G11B5/6088

Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US09805757B2

公开(公告)日：2017-10-31

申请号：US13867179

申请日：2013-04-22

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Tong Zhao ,  Michael Christopher Kautzky ,  William Albert Challener ,  Michael Allen Seigler

IPC: G11B11/00 ,  G11B5/127 ,  G11B13/04 ,  B82Y10/00 ,  G02B6/10 ,  G11B5/31 ,  G11B5/00 ,  G11B5/60

CPC classification number: G11B13/04 ,  B82Y10/00 ,  G02B6/102 ,  G11B5/1278 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021 ,  Y10T428/11

Abstract: A near field transducer includes gold and at least one dopant. The dopant can include at least one of: Cu, Rh, Ru, Ag, Ta, Cr, Al, Zr, V, Pd, Ir, Co, W, Ti, Mg, Fe, or Mo. The dopant concentration may be in a range from 0.5% and 30%. The dopant can be a nanoparticle oxide of V, Zr, Mg, Ca, Al, Ti, Si, Ce, Y, Ta, W, or Th, or a nitride of Ta, Al, Ti, Si, In, Fe, Zr, Cu, W or B.

公开(公告)号：US09336800B2

公开(公告)日：2016-05-10

申请号：US14816341

申请日：2015-08-03

Applicant: Seagate Technology LLC

Inventor： James Gary Wessel ,  Sarbeswar Sahoo ,  Michael Christopher Kautzky

IPC: G11B5/00 ,  G11B5/31 ,  G11B5/48 ,  G11B5/012 ,  G11B5/187 ,  G11B5/127 ,  G11B5/60 ,  G02B6/122 ,  G02B5/00

CPC classification number: G11B5/3163 ,  G02B5/008 ,  G02B6/1226 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/4866 ,  G11B5/6088 ,  G11B2005/0021

Abstract: A near field transducer with a peg region, an enlarged region disposed adjacent the peg region, and a barrier material disposed between the peg region and the enlarged region. The barrier material reduces or eliminates interdiffusion of material between the peg region and the enlarged region.

公开(公告)号：US09311944B2

公开(公告)日：2016-04-12

申请号：US14070066

申请日：2013-11-01

Applicant: Seagate Technology LLC

Inventor： David J. Ellison ,  Michael Christopher Kautzky ,  Jorge Hanchi

IPC: G11B21/02 ,  G11B5/60

CPC classification number: G11B5/6076 ,  G11B5/6058

Abstract: Example embodiments include an apparatus that has a piezoelectric contact sensor. The piezoelectric contact sensor includes a semiconductor device having a semiconductor material that defines a channel through which current can flow. The piezoelectric contact sensor also includes a piezoelectric element coupled to the semiconductor material. The semiconductor material is configured to modulate the current channel in response to compressive stress waves at the contact sensor. Other example embodiments include an apparatus that has a slider having an air-bearing surface, a write head integral to the slider, and a piezoelectric contact sensor that includes a semiconductor device and a piezoelectric element.

Abstract translation: 示例性实施例包括具有压电接触传感器的装置。 压电接触传感器包括具有半导体材料的半导体器件，该半导体器件限定电流可流过的沟道。 压电接触传感器还包括耦合到半导体材料的压电元件。 半导体材料被配置为响应于接触传感器处的压应力波来调制电流通道。 其他示例性实施例包括具有滑动器的装置，其具有空气轴承表面，与滑块一体的写入头和包括半导体器件和压电元件的压电接触传感器。