摘要:
The invention provides a method for subjecting laminated thin films disposed below a photoresist mask pattern to plasma processing, wherein the roughness on the side walls of the formed pattern is reduced, and the LER and LWR are reduced. When etching a material to be processed to form a gate electrode including thin films such as a gate insulating film 205, a conducting layer 204, a mask layer 203 and an antireflection film 202 laminated on a semiconductor substrate 206 and a photoresist mask pattern 201 disposed on the antireflection film, prior to etching the mask pattern 201, plasma is generated from nitrogen gas or a mixed gas including nitrogen gas and deposition gas to subject the mask pattern 201 to a plasma curing process so as to reduce the roughness on the surface and side walls of the mask pattern 201, and then the laminated thin films 202, 203 and 204 disposed below the mask pattern 201 are subjected to a plasma etching process.
摘要:
An object of the present invention is to provide an electronic component using a Cu-based conductive material that can suppress oxidization even in a heat treatment in an oxidizing atmosphere and that can suppress an increase in an electrical resistance. In an electronic component having an electrode or a wiring, a ternary alloy made from three elements consisting of Cu, Al, and Co is used as a Cu-based wiring material that can prevent oxidization of the electrode or the wiring. Specifically, part or the whole of the electrode or the wiring has a chemical composition in which an Al content is 10 at % to 25 at %, a Co content is 5 at % to 20 at %, and the balance is composed of Cu and unavoidable impurities, and the chemical composition represents a ternary alloy in which two phases of a Cu solid solution formed by Al and Co being dissolved into Cu and a CoAl intermetallic compound coexist together.
摘要:
A plasma processing apparatus for subjecting a substrate to be processed to plasma processing includes a processing chamber, a substrate electrode having an electrostatic chuck mechanism, a plasma generator, a high-frequency bias power supply which applies a high-frequency bias voltage to the substrate electrode, a voltage monitor which monitors the high-frequency bias voltage, a current monitor which monitors a high-frequency bias current, a measurement storage unit which stores a resistance component, an induction component and a capacity component of the electrostatic chuck mechanism, which have been calculated beforehand as fitting parameters of an expression V w = V esc - R esc I esc - L esc I esc t - 1 C esc ∫ I esc t + A , ( A ) that is an approximate curve of a correlation among a voltage of the substrate, a computing unit which estimates the voltage of the substrate according to the expression, and a control unit that generates a control signal for the high-frequency bias power supply based on the voltage of the substrate.
摘要翻译:用于对待处理的基板进行等离子体处理的等离子体处理装置包括处理室,具有静电卡盘机构的基板电极,等离子体发生器,向基板施加高频偏置电压的高频偏置电源 电极,监视高频偏置电压的电压监视器,监视高频偏置电流的电流监视器,存储电阻分量的测量存储单元,静电卡盘机构的感应部件和电容分量,其中 预先计算出的表达式的拟合参数V w = V esc - R esc I I I - - - - - - - ( - 衬底的电压,根据表达式估计衬底的电压的计算单元和产生t的控制信号的控制单元之间的相关性的近似曲线 他基于基板电压的高频偏置电源。
摘要:
This invention relates to DNA encoding a novel enzyme having activity of synthesizing D-serine from formaldehyde and glycine, recombinant DNA constructed by integrating such DNA into a vector, a transformant transformed with the recombinant DNA, and a method for producing D-serine from formaldehyde and glycine with the use of the enzyme.
摘要:
A method of smelting copper includes: a generating step of generating blister and slag from copper matte by charging the copper matte into a smelting furnace and oxidizing the copper matte; a first refining step of refining another blister from the slag by reduction in an electrical furnace; and a charging step of charging the slag into one of the smelting furnace or another smelting furnace for treating copper concentrate and generating matte as repeating flux if copper grade of slag generated in the first refining step is higher than 0.8 weight %.
摘要:
The invention provides: an isopropyl alcohol-producing bacterium which has an acetoacetate decarboxylase activity, an isopropyl alcohol dehydrogenase activity, a CoA transferase activity and a thiolase activity having been imparted thereto and is capable of producing isopropyl alcohol from a plant-derived material; a method of producing isopropyl alcohol whereby isopropyl alcohol is produced from a plant-derived material by using this isopropyl alcohol-producing bacterium; and an apparatus therefor.
摘要:
The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
摘要:
A method for manufacturing a preform from a nano composite resin that includes a thermoplastic resin containing inorganic fine particles, the preform being a pre-finish product of an optical member having an optical surface formed by press molding, is provided. The method includes: supplying a solution including the nano composite resin and a solvent into a mold which has an approximate optical surface closely resembling the optical surface and an opening to an atmosphere; and evaporating the solvent while a shape of the approximate optical surface is kept, to solidify the solution.
摘要:
The invention provides a method for subjecting laminated thin films disposed below a photoresist mask pattern to plasma processing, wherein the roughness on the side walls of the formed pattern is reduced, and the LER and LWR are reduced. When etching a material to be processed to form a gate electrode including thin films such as a gate insulating film 205, a conducting layer 204, a mask layer 203 and an antireflection film 202 laminated on a semiconductor substrate 206 and a photoresist mask pattern 201 disposed on the antireflection film, prior to etching the mask pattern 201, plasma is generated from nitrogen gas or a mixed gas including nitrogen gas and deposition gas to subject the mask pattern 201 to a plasma curing process so as to reduce the roughness on the surface and side walls of the mask pattern 201, and then the laminated thin films 202, 203 and 204 disposed below the mask pattern 201 are subjected to a plasma etching process.
摘要:
A motor controller is provided with: an estimated temperature calculating means that calculates an estimated temperature of a motor; and a control unit that can perform a driving control of the motor only when the estimated temperature is not larger than a predetermined value. A mode switching means switches the control unit and the estimated temperature calculating means between in a normal operation mode in which they can drive the motor and in a sleep mode in which electric power consumption thereof is smaller than in the normal operation mode in accordance with a predetermined condition while the motor is stationary. An activating means activates the estimated temperature calculating means in the sleep mode for a predetermined active time every time a predetermined sleep time is elapsed.