公开(公告)号：US20150255325A1

公开(公告)日：2015-09-10

申请号：US14644375

申请日：2015-03-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yuugo Goto

IPC: H01L21/762 ,  H01L21/308

CPC classification number: H01L21/76275 ,  H01L21/308 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/32 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/56

Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

Abstract translation: 具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是 以及制造半导体器件的方法。 在本发明中，元件不形成在塑料膜上。 相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂 用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层） （第二接合部件（16））。 以这种方式，本发明实现了薄膜的薄化和重量的减轻。

公开(公告)号：US09093324B2

公开(公告)日：2015-07-28

申请号：US14010735

申请日：2013-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L29/04 ,  H01L31/20 ,  H01L29/22 ,  H01L33/00 ,  H01L23/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12

CPC classification number: H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

公开(公告)号：US10957723B2

公开(公告)日：2021-03-23

申请号：US16847933

申请日：2020-04-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L27/12 ,  H01L21/762 ,  H01L27/32 ,  B60R1/00 ,  B60R11/02 ,  B60R11/04 ,  H01L21/683 ,  B60R11/00

Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

公开(公告)号：US20200294848A1

公开(公告)日：2020-09-17

申请号：US16832442

申请日：2020-03-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yuugo Goto

IPC: H01L21/762 ,  H01L27/12 ,  H01L29/786 ,  H01L51/00 ,  H01L51/56 ,  H01L21/308

Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

公开(公告)号：US10607883B2

公开(公告)日：2020-03-31

申请号：US15479311

申请日：2017-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yuugo Goto

IPC: H01L21/00 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786 ,  H01L51/00 ,  H01L51/56 ,  H01L21/308 ,  H01L27/32

Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

公开(公告)号：US10529748B2

公开(公告)日：2020-01-07

申请号：US15834163

申请日：2017-12-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

IPC: H01L51/00 ,  H01L27/12 ,  B32B7/06 ,  B32B43/00 ,  H01L21/762 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32 ,  G02F1/1368 ,  H01L51/56 ,  G02F1/136 ,  H01L21/322 ,  H01L51/52

Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

公开(公告)号：US10038012B2

公开(公告)日：2018-07-31

申请号：US15397045

申请日：2017-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yumiko Ohno ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L33/56 ,  H01L33/62 ,  H01L29/786 ,  H01L33/24 ,  H01L33/44 ,  H01L21/762

CPC classification number: H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

公开(公告)号：US09793328B2

公开(公告)日：2017-10-17

申请号：US15075436

申请日：2016-03-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshimitsu Konuma ,  Junya Maruyama

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/00 ,  H01L29/786 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3281 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L51/0001 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0038 ,  H01L51/0042 ,  H01L51/005 ,  H01L51/0062 ,  H01L51/0084 ,  H01L51/0085 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5246 ,  H01L2251/5392 ,  H01L2251/558

Abstract: Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.

公开(公告)号：US09620408B2

公开(公告)日：2017-04-11

申请号：US14644375

申请日：2015-03-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yuugo Goto

IPC: H01L21/00 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786 ,  H01L51/00 ,  H01L51/56 ,  H01L21/308 ,  H01L27/32

CPC classification number: H01L21/76275 ,  H01L21/308 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/32 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/56

Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

公开(公告)号：US20160190219A1

公开(公告)日：2016-06-30

申请号：US15059623

申请日：2016-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/1266 ,  B32B7/06 ,  B32B43/006 ,  B32B2310/0843 ,  B32B2457/08 ,  B32B2457/14 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/3221 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/78663 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/529 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  Y10S438/977 ,  Y10T156/1137 ,  Y10T156/1939

Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.