公开(公告)号：US12199186B2

公开(公告)日：2025-01-14

申请号：US18378688

申请日：2023-10-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi Okazaki ,  Masami Jintyou ,  Kensuke Yoshizumi

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The first insulating layer is provided over the semiconductor layer. The first conductive layer is provided over the first insulating layer. The semiconductor layer includes a first region that overlaps with the first conductive layer and the first insulating layer, a second region that does not overlap with the first conductive layer and overlaps with the first insulating layer, and a third region that overlaps with neither the first conductive layer nor the first insulating layer. The semiconductor layer contains a metal oxide. The second region and the third region contain a first element. The first element is one or more elements selected from boron, phosphorus, aluminum, and magnesium. The first element exists in a state of being bonded to oxygen.

公开(公告)号：US11929412B2

公开(公告)日：2024-03-12

申请号：US17866822

申请日：2022-07-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Yukinori Shima ,  Kenichi Okazaki

IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/42364 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/517 ,  H01L29/518

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.

公开(公告)号：US11810858B2

公开(公告)日：2023-11-07

申请号：US17729306

申请日：2022-04-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Toshimitsu Obonai ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/263 ,  H01L21/265

CPC classification number: H01L23/5329 ,  H01L21/02129 ,  H01L21/265 ,  H01L21/2636

Abstract: A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.

公开(公告)号：US20230245599A1

公开(公告)日：2023-08-03

申请号：US18131435

申请日：2023-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yukinori Shima ,  Masami Jintyou

IPC: G09F9/30 ,  H10K50/00

CPC classification number: G09F9/30 ,  H10K50/00 ,  H01L29/7869

Abstract: A semiconductor device that can be highly integrated is provided.
The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, and a first conductive layer. The third insulating layer is positioned over the semiconductor layer and includes a first opening over the semiconductor layer. The first conductive layer is positioned over the semiconductor layer, the first insulating layer is positioned between the first conductive layer and the semiconductor layer, and the second insulating layer is provided in a position that is in contact with a side surface of the first opening, the semiconductor layer, and the first insulating layer. The semiconductor layer includes a first portion overlapping with the first insulating layer, a pair of second portions between which the first portion is sandwiched and which overlap with the second insulating layer, and a pair of third portions between which the first portion and the pair of second portions are sandwiched and which overlap with neither the first insulating layer nor the second insulating layer. The first portion has a smaller width than the first opening and has a thinner shape of the semiconductor layer than the second portions, and the second portions have a thinner shape of the semiconductor layer than the third portions.

公开(公告)号：US11710794B2

公开(公告)日：2023-07-25

申请号：US17063748

申请日：2020-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/10 ,  H01L21/02 ,  H01L21/465 ,  H10K59/123 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/136277 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78693 ,  H01L29/78696 ,  H10K59/123

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US11640996B2

公开(公告)日：2023-05-02

申请号：US17320557

申请日：2021-05-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device with favorable electric characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The oxide semiconductor layer includes a region in contact with the first insulating layer, the first conductive layer is connected to the oxide semiconductor layer, and the second conductive layer is connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

公开(公告)号：US11581427B2

公开(公告)日：2023-02-14

申请号：US17254426

申请日：2019-06-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Takahiro Iguchi ,  Yasutaka Nakazawa

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/383 ,  H01L21/4757 ,  H01L29/786 ,  G02F1/1368 ,  H01L21/465 ,  H01L27/12 ,  H01L27/32 ,  H01L29/423

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor layer is formed, a gate insulating layer is formed over the semiconductor layer, a metal oxide layer is formed over the gate insulating layer, and a gate electrode which overlaps with part of the semiconductor layer is formed over the metal oxide layer. Then, a first element is supplied through the metal oxide layer and the gate insulating layer to a region of the semiconductor layer that does not overlap with the gate electrode. Examples of the first element include phosphorus, boron, magnesium, aluminum, and silicon. The metal oxide layer may be processed after the first element is supplied to the semiconductor layer.

公开(公告)号：US11557612B2

公开(公告)日：2023-01-17

申请号：US17037769

申请日：2020-09-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  G02F1/1368 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  G02F1/1333 ,  H01L27/32

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US10861981B2

公开(公告)日：2020-12-08

申请号：US16384069

申请日：2019-04-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/417 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477 ,  H01L21/465 ,  H01L21/4757 ,  H01L29/423 ,  H01L27/32

Abstract: The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

公开(公告)号：US20200373432A1

公开(公告)日：2020-11-26

申请号：US16992373

申请日：2020-08-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/417 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477 ,  H01L21/465 ,  H01L21/4757 ,  H01L29/423

Abstract: The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.