公开(公告)号：US06823297B2

公开(公告)日：2004-11-23

申请号：US10383908

申请日：2003-03-06

申请人： Patrick Jenny ,  Seong Lee ,  Hamdi A. Tchelepi

发明人： Patrick Jenny ,  Seong Lee ,  Hamdi A. Tchelepi

IPC分类号： G06G748

CPC分类号： G06F17/5018 ,  G01V11/00 ,  G06F2217/16

摘要： A multi-scale finite-volume (MSFV) method to solve elliptic problems with a plurality of spatial scales arising from single or multi-phase flows in porous media is provided. Two sets of locally computed basis functions are employed. A first set of basis functions captures the small-scale heterogeneity of the underlying permeability field, and it is computed to construct the effective coarse-scale transmissibilities. A second set of basis functions is required to construct a conservative fine-scale velocity field. The method efficiently captures the effects of small scales on a coarse grid, is conservative, and treats tensor permeabilities correctly. The underlying idea is to construct transmissibilities that capture the local properties of a differential operator. This leads to a multi-point discretization scheme for a finite-volume solution algorithm. Transmissibilities for the MSFV method are preferably constructed only once as a preprocessing step and can be computed locally. Therefore, this step is well suited for massively parallel computers. Furthermore, a conservative fine-scale velocity field can be constructed from a coarse-scale pressure solution which also satisfies the proper mass balance on the fine scale. A transport problem is ideally solved iteratively in two stages. In the first stage, a fine scale velocity field is obtained from solving a pressure equation. In the second stage, the transport problem is solved on the fine cells using the fine-scale velocity field. A solution may be computed on the coarse cells at an incremental time and properties, such as a mobility coefficient, may be generated for the fine cells at the incremental time. If a predetermined condition is not met for all fine cells inside a dual coarse control volume, then the dual and fine scale basis functions in that dual coarse control volume are reconstructed.

公开(公告)号：US5956559A

公开(公告)日：1999-09-21

申请号：US032292

申请日：1998-02-27

申请人： Heung Sub Song ,  Eun Pyo Kim ,  Seong Lee ,  Joon Woong Noh ,  Moon Hee Hong ,  Woon Hyung Baek

发明人： Heung Sub Song ,  Eun Pyo Kim ,  Seong Lee ,  Joon Woong Noh ,  Moon Hee Hong ,  Woon Hyung Baek

IPC分类号： C22C29/00 ,  B22F3/10 ,  C22C1/04 ,  C22C27/04 ,  C22F1/18 ,  B22F3/24

CPC分类号： C22C1/045 ,  B22F3/1017 ,  C22C27/04 ,  C22F1/18 ,  B22F2998/10

摘要： A method for producing an irregular tungsten/matrix interface in tungsten based heavy alloy is disclosed. The method involves a cyclic heat treatment and resintering at above liquidus temperature for tungsten heavy alloys consisting of 80 to 98 weight % tungsten and remainder of matrix phase. The sintered specimens are cyclically heat treated at above 1000.degree. C. and resintered at liquidus temperature of the matrix phase for one minute to 4 hours at a constant temperature.

摘要翻译： 公开了一种在钨基重合金中制造不规则钨/基质界面的方法。 该方法涉及钨基重质合金的上述液相线温度下的循环热处理和树脂交换，其由80至98重量％的钨和其余的基体相组成。 将烧结的样品在1000℃以上进行循环热处理，并在恒定温度下在基质相的液相线温度下重新烧结1分钟至4小时。

公开(公告)号：US20070128781A1

公开(公告)日：2007-06-07

申请号：US11502948

申请日：2006-08-11

申请人： Moon Jang ,  Seong Lee ,  Yark Kim ,  Chel Choi ,  Myung Jun

发明人： Moon Jang ,  Seong Lee ,  Yark Kim ,  Chel Choi ,  Myung Jun

IPC分类号： H01L21/338

CPC分类号： H01L29/458 ,  H01L29/517 ,  H01L29/66643

摘要： Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same. The method includes the steps of: preparing a substrate; forming an active silicon layer on the substrate; forming a gate insulating layer on a region of the silicon layer; forming a gate electrode on the gate insulating layer; implanting ions into the silicon layer on which the gate insulating layer is not formed; and annealing the ion-implanted silicon layer. Accordingly, it is possible to manufacture the Schottky barrier tunnel transistor having stable characteristics and high performance by implanting the ions into the silicon layer using an ion implantation method and then annealing the silicon layer to form metal-silicide.

摘要翻译： 提供了一种肖特基势垒隧道晶体管及其制造方法。 该方法包括以下步骤：制备衬底; 在衬底上形成有源硅层; 在所述硅层的区域上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 将离子注入未形成栅极绝缘层的硅层中; 并对离子注入的硅层退火。 因此，通过使用离子注入法将离子注入硅层，然后使硅层退火以形成金属硅化物，可以制造具有稳定特性和高性能的肖特基势垒隧道晶体管。

公开(公告)号：US20070105259A1

公开(公告)日：2007-05-10

申请号：US11591455

申请日：2006-11-02

申请人： Jong Won ,  Masayoshi Koike ,  Jae Han ,  Seong Lee

发明人： Jong Won ,  Masayoshi Koike ,  Jae Han ,  Seong Lee

IPC分类号： H01L21/205

CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： A method for growing a high quality indium gallium nitride by metal organic chemical vapor deposition (MOCVD) is provided. In the method, the indium gallium nitride grows at a growth rate of at least about 1.5 nm/min at a temperature of at least about 800° C. while an internal pressure of an MOCVD reactor is maintained at about 400 mbar or less.

摘要翻译： 提供了通过金属有机化学气相沉积（MOCVD）生长高品质氮化铟镓的方法。 在该方法中，氮化镓铟在至少约800℃的温度下以至少约1.5nm / min的生长速率生长，同时MOCVD反应器的内部压力保持在约400毫巴或更小。

公开(公告)号：US20070069234A1

公开(公告)日：2007-03-29

申请号：US11525012

申请日：2006-09-22

申请人： Jong Won ,  Soo Kim ,  Jae Han ,  Seong Lee

发明人： Jong Won ,  Soo Kim ,  Jae Han ,  Seong Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/20 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173

摘要： A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.

摘要翻译： 提供一种氮化物半导体器件。 在器件中，形成第一和第二导电型氮化物层。 在第一和第二导电型氮化物层之间形成有源层。 有源层包括至少一个量子势垒层和至少一个量子阱层。 而且，在第一导电型氮化物层和有源层之间插入电流扩散层。 当前的扩散层的In含量大于有源层的量子阱层。

公开(公告)号：US20060215865A1

公开(公告)日：2006-09-28

申请号：US11261618

申请日：2005-10-31

申请人： Lai Kang ,  Seong Lee

发明人： Lai Kang ,  Seong Lee

IPC分类号： H04R9/06

CPC分类号： H04R1/288 ,  H04R1/028 ,  H04R2499/11 ,  H04R2499/15

摘要： Embodiments of a portable computer, a woofer speaker mounting structure for a portable computer and methods thereof can reduce transmission of vibrations from speaker to remaining portions of the portable computers. A woofer speaker mounting structure for a portable computer can include a case, a woofer speaker for producing bass sound positioned on the case and formed with support pieces, dampers for absorbing vibration from the woofer speaker can fit into the support pieces and can be coupled to the case. The damper can include a damper body made of an elastic material and through which a central hole is bored and shock-absorbing portions. Due to the structural and material properties of the damper, vibrations are also absorbed. Therefore, the operational characteristics of a portable computer are improved.

摘要翻译： 便携式计算机，用于便携式计算机的低音扬声器安装结构及其方法的实施例可以减少扬声器到便携式计算机的剩余部分的振动传输。 用于便携式计算机的低音扬声器安装结构可以包括壳体，用于产生位于壳体上并形成有支撑件的低音声音的低音喇叭扬声器，用于吸收来自低音扬声器扬声器的振动的阻尼器可以装配到支撑件中，并且可以耦合到 案子。 阻尼器可以包括由弹性材料制成的阻尼体，中心孔穿过该阻尼体和减震部分。 由于阻尼器的结构和材料特性，振动也被吸收。 因此，提高了便携式计算机的操作特性。

公开(公告)号：US20060131648A1

公开(公告)日：2006-06-22

申请号：US11137396

申请日：2005-05-26

申请人： Chang Ahn ,  Wonju Cho ,  Kiju Im ,  Jong Yang ,  In Baek ,  Seong Lee ,  Sung Baek

发明人： Chang Ahn ,  Wonju Cho ,  Kiju Im ,  Jong Yang ,  In Baek ,  Seong Lee ,  Sung Baek

IPC分类号： H01L27/12

CPC分类号： H01L29/66772 ,  H01L29/66636 ,  H01L29/78618

摘要： There are provided an ultra thin film silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) having a recessed source/drain structure, and a method of fabricating the same. The ultra thin film SOI MOS transistor includes a semiconductor substrate; a buried insulating layer disposed on the semiconductor substrate, and formed recessed except for a center portion thereof; an ultra thin film single crystalline silicon layer pattern disposed on the recessed buried insulating layer; a gate stack disposed on the ultra thin film single crystalline silicon layer pattern, and including a gate insulating layer pattern and a gate conductive layer pattern, which are sequentially stacked; a gate spacer layer disposed on sidewalls of the gate stack; and a recessed source/drain region disposed on the recessed buried insulating layer, and formed to overlap a bottom surface portion of the ultra thin film single crystalline silicon layer pattern, which does not overlap the center portion of the recessed buried insulating layer.

摘要翻译： 提供了具有凹陷的源极/漏极结构的超薄膜绝缘体上硅（SOI）金属氧化物半导体场效应晶体管（MOSFET）及其制造方法。 超薄膜SOI MOS晶体管包括半导体衬底; 掩埋绝缘层，设置在所述半导体衬底上，除了其中心部分外形成凹陷; 设置在凹入的掩埋绝缘层上的超薄膜单晶硅层图案; 设置在超薄膜单晶硅层图案上的栅堆叠，并且包括依次层叠的栅极绝缘层图案和栅极导电层图案; 设置在所述栅极堆叠的侧壁上的栅极间隔层; 以及凹陷的源极/漏极区，设置在所述凹入的掩埋绝缘层上，并且形成为与所述超薄膜单晶硅层图案的底表面部分重叠，所述底表面部分不与所述凹入的绝缘层的中心部分重叠。

公开(公告)号：US20060131621A1

公开(公告)日：2006-06-22

申请号：US11187654

申请日：2005-07-22

申请人： Jae Shin ,  Moon Jang ,  Yark Kim ,  Seong Lee

发明人： Jae Shin ,  Moon Jang ,  Yark Kim ,  Seong Lee

IPC分类号： H01L31/112

CPC分类号： H01L29/7839 ,  G11C11/56

摘要： A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer; and a gate formed on the channel region, with a gate dielectric layer interposed therebetween. Positive (+), 0 or negative (−) gate voltage is selectively applied to the gate, the channel becomes off-state when the gate voltage between a negative threshold voltage and a positive threshold voltage is applied, and the channel becomes a first on-state and a second on-state when the gate voltage is lower than the negative threshold voltage or higher than the positive threshold voltage. Accordingly, it is possible to implement three current states, that is, hole current, electron current, and no current. The SB-MOSFET can be applied to a multi-bit memory and/or multi-bit logic device.

摘要翻译： 提供了使用SB-MOSFET的双极运输的装置及其操作方法。 SB-MOSFET包括：硅沟道区; 源极和漏极在沟道区域的两侧接触并由包括金属层的材料形成; 以及形成在沟道区上的栅极，介于其间的栅介质层。 正极（+），0或负（ - ）栅极电压选择性地施加到栅极，当施加负阈值电压和正阈值电压之间的栅极电压时，通道变为截止状态，并且通道变为第一个 当门电压低于负阈值电压或高于正阈值电压时，状态和第二导通状态。 因此，可以实现三种电流状态，即空穴电流，电子电流，无电流。 SB-MOSFET可以应用于多位存储器和/或多位逻辑器件。

公开(公告)号：US20060118899A1

公开(公告)日：2006-06-08

申请号：US11196180

申请日：2005-08-03

申请人： Moon Jang ,  Yark Kim ,  Jae Shin ,  Seong Lee

发明人： Moon Jang ,  Yark Kim ,  Jae Shin ,  Seong Lee

IPC分类号： H01L31/07

CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/872

摘要： Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).

公开(公告)号：US20060117660A1

公开(公告)日：2006-06-08

申请号：US11296061

申请日：2005-12-06

申请人： Tae Woo ,  Young Yoon ,  Seong Lee ,  Il Kim ,  Keun Choi

发明人： Tae Woo ,  Young Yoon ,  Seong Lee ,  Il Kim ,  Keun Choi

IPC分类号： B01J7/00

CPC分类号： B01J8/0465 ,  B01J8/0496 ,  B01J19/249 ,  B01J2208/00309 ,  B01J2208/00495 ,  B01J2208/00504 ,  B01J2208/00513 ,  B01J2208/0053 ,  B01J2219/00155 ,  B01J2219/2454 ,  B01J2219/2465 ,  B01J2219/2466 ,  B01J2219/2481 ,  B01J2219/2485 ,  C01B3/384 ,  C01B3/48 ,  C01B3/583 ,  C01B2203/0233 ,  C01B2203/0283 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/0816 ,  C01B2203/1064 ,  C01B2203/107 ,  C01B2203/1076 ,  C01B2203/1288 ,  C01B2203/142 ,  C01B2203/82 ,  Y02P20/124 ,  Y02P20/129

摘要： A small cylindrical reformer according to the embodiments of the present invention are suitable for use in the production of hydrogen from fossil fuels for a small fuel cell power plant. In the small cylindrical reformer, a reforming reactor, a water gas shift reactor (high temperature or low temperature), a combustor, a heat exchanger, a steam generator, etc., may be integrated in a single container to form an optimal heat exchanging network, minimize heat loss and optimize heat exchange efficiency. Thereby, the reformer is designed to be easily processed and manufactured and to have a compact size, thus realizing high efficiency, light weight and ease of mass production.