LIGHT EMITTING DEVICE FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20200258872A1

    公开(公告)日:2020-08-13

    申请号:US16782594

    申请日:2020-02-05

    Abstract: A light emitting device for a display including first, second, and third LED stacks each including a first semiconductor layer, an active layer, and a second semiconductor layer, first, second, and third transparent electrodes in ohmic contact with a lower surface of the first LED stack, an upper surface of the second LED stack, and an upper surface of the third LED stack, respectively, a first electrode pad disposed on the first semiconductor layer of the third LED stack, a lower second electrode pad disposed on the third transparent electrode, and first, second, and third bump pads disposed on the first LED stack and electrically connected to the LED stacks, respectively, and a common bump pad disposed electrically connected to each LED stack, in which an upper surface of the first electrode pad is located at substantially the same elevation as that of the lower second electrode pad.

    LIGHT EMITTING DIODE
    32.
    发明申请

    公开(公告)号:US20190157506A1

    公开(公告)日:2019-05-23

    申请号:US16259478

    申请日:2019-01-28

    Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

    LIGHT EMITTING DIODE
    34.
    发明申请
    LIGHT EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号:US20160247992A1

    公开(公告)日:2016-08-25

    申请号:US15147619

    申请日:2016-05-05

    Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer disposed on the first and second light emitting cells. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell.

    Abstract translation: 一种发光二极管,包括在基板上彼此分离的第一发光单元和第二发光单元,与第一发光单元电连接的第一透明电极层,将第一发光单元与第二发光单元电连接的第二 发光单元,以及设置在第一和第二发光单元上的第一绝缘层。 第一透明电极层设置在第一发光单元的上表面上,并且部分地覆盖第一发光单元的侧表面。 第一绝缘层将第一透明电极层与第一发光单元的侧表面分开。

    LIGHT EMITTING DIODE WITH HIGH EFFICIENCY

    公开(公告)号:US20250151465A1

    公开(公告)日:2025-05-08

    申请号:US19001212

    申请日:2024-12-24

    Abstract: A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.

    LIGHT EMITTING DEVICE FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20250048793A1

    公开(公告)日:2025-02-06

    申请号:US18924883

    申请日:2024-10-23

    Abstract: A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.

    LIGHT EMITTING DEVICE FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20240363600A1

    公开(公告)日:2024-10-31

    申请号:US18769385

    申请日:2024-07-11

    CPC classification number: H01L25/0756 H01L25/0753 H01L33/42 H01L33/62

    Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material.

    LIGHT EMITTING DEVICE FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20230005892A1

    公开(公告)日:2023-01-05

    申请号:US17902893

    申请日:2022-09-04

    Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material, in which a width of an upper end of the upper conductive material is greater than a width of the corresponding upper conductive material.

    UV LIGHT EMITTING DIODE
    40.
    发明申请

    公开(公告)号:US20220367753A1

    公开(公告)日:2022-11-17

    申请号:US17743993

    申请日:2022-05-13

    Abstract: A UV light emitting diode includes a substrate having a plurality of holes surrounded by a flat surface, a first conductivity type semiconductor layer disposed on the substrate, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. A distance from the flat surface to the active layer is smaller than a distance from bottom surfaces of the plurality of holes to the active layer. The flat surface is in contact with the first conductivity type semiconductor layer.

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