公开(公告)号：US08357597B2

公开(公告)日：2013-01-22

申请号：US12989039

申请日：2009-04-17

申请人： Issei Satoh ,  Michimasa Miyanaga ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Issei Satoh ,  Michimasa Miyanaga ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： H01L21/20

CPC分类号： H01L29/267 ,  C23C14/0617 ,  C23C14/28 ,  C30B23/02 ,  C30B29/36 ,  C30B29/38 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631

摘要： Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided. A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0

摘要翻译： 形成混晶的Si（1-v-w-x）C w Al x N v晶体。 提供了一种用于制造易加工的Si（1-v-w-x）C w Al x N v衬底的方法，制造外延晶片的方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。 制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。 首先，准备Si基板11。 然后在Si衬底11上生长Si（1-vwx）C w Al x N v层12（0

公开(公告)号：US08147612B2

公开(公告)日：2012-04-03

申请号：US12298332

申请日：2007-04-24

申请人： Tomoki Uemura ,  Takashi Sakurada ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Takashi Sakurada ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

IPC分类号： C30B21/02

CPC分类号： H01L21/02623 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

摘要翻译： 提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法， 晶种基片。 在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或 反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。 这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

公开(公告)号：US20100147211A1

公开(公告)日：2010-06-17

申请号：US12067936

申请日：2007-03-22

申请人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Tomohiro Kawase

发明人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Tomohiro Kawase

IPC分类号： C30B23/00

CPC分类号： C30B29/403 ,  C30B23/00

摘要： This III-nitride single-crystal growth method, being a method of growing a AlxGa1-xN single crystal (4) by sublimation, is furnished with a step of placing source material (1) in a crucible (12), and a step of sublimating the source material (1) to grow AlxGa1-xN (0

摘要翻译： 作为通过升华生长Al x Ga 1-x N单晶（4）的方法的III族氮化物单晶生长方法具有将源材料（1）放置在坩埚（12）中的步骤，并且 使源材料（1）升华以在坩埚（12）中生长Al x Ga 1-x N（0

公开(公告)号：US20090208749A1

公开(公告)日：2009-08-20

申请号：US12305001

申请日：2006-06-16

申请人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

发明人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

IPC分类号： B32B5/16 ,  C30B23/00

CPC分类号： C30B23/005 ,  C30B29/403 ,  C30B35/002 ,  Y10T428/2982

摘要： Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).

摘要翻译： 提供具有良好重现性的具有良好结晶度的III族氮化物单晶的方法和通过生长方法获得的III族氮化物晶体。 一种方法是在晶体生长容器（11）的内部生长III族氮化物单晶（3），其特征在于，至少使用由孔隙率在0.1％至70％之间的金属碳化物形成的多孔体 晶体生长容器（11）的一部分。 采用晶体生长容器（11）使得可以通过多孔体中的孔将晶体生长容器（11）内的源气体（4）的1％〜50％排出到晶体生长容器 生长容器（11）。

公开(公告)号：US20080299375A1

公开(公告)日：2008-12-04

申请号：US12149776

申请日：2008-05-08

申请人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： C01B21/072 ,  B32B9/00

CPC分类号： C30B33/00 ,  Y10T428/21

摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

摘要翻译： 当AlxGayIn1-x-yN基板的直径为2英寸时，AlxGayIn1-x-yN基板在AlxGayIn1-x-yN基板的表面上具有至少0.2μm的粒度的粒子的数目为20个以上的Al x Ga y In 1-x-y N基板 以及可以获得Al x Ga y In 1-x-y N基板的清洗方法。 此外，AlxGayIn1-x-yN衬底，其中，通过X射线光电子能谱法测定Al x Ga y In 1-x-y N衬底的表面的光电子光谱，检测角度为10°时，C1s电子的峰面积之比 并且N1s电子的峰面积（C1s电子峰面积/ N1s电子峰面积）为3以下，提供了可以获得Al x Ga y In 1-x-y N基板的清洗方法。 另外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al2s电子的峰面积与N1s电子的峰面积之比 （Al 2 S电子峰面积/ N1s电子峰面积）为0.65以下，设置可获得AlN基板的清洗方法。

公开(公告)号：US08361226B2

公开(公告)日：2013-01-29

申请号：US12067936

申请日：2007-03-22

申请人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Tomohiro Kawase

发明人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Tomohiro Kawase

IPC分类号： C30B21/02

CPC分类号： C30B29/403 ,  C30B23/00

摘要： This III-nitride single-crystal growth method, being a method of growing a AlxGa1-xN single crystal (4) by sublimation, is furnished with a step of placing source material (1) in a crucible (12), and a step of sublimating the source material (1) to grow AlxGa1-xN (0

摘要翻译： 作为通过升华生长Al x Ga 1-x N单晶（4）的方法的III族氮化物单晶生长方法具有将源材料（1）放置在坩埚（12）中的步骤，并且 使源材料（1）升华以在坩埚（12）中生长Al x Ga 1-x N（0

公开(公告)号：US20070145376A1

公开(公告)日：2007-06-28

申请号：US11616016

申请日：2006-12-26

申请人： Manabu Okui ,  Ken-ichiro Miyatake ,  Hideaki Nakahata ,  Shinsuke Fujiwara ,  Seiji Nakahata

发明人： Manabu Okui ,  Ken-ichiro Miyatake ,  Hideaki Nakahata ,  Shinsuke Fujiwara ,  Seiji Nakahata

IPC分类号： H01L29/15

CPC分类号： C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

摘要： Affords GaN crystal substrates that can reduce the occurring of cracks and fractures in the GaN crystal substrates when the semiconductor devices are manufactured, semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates. A gallium nitride crystal substrate has a surface area of 10 cm2 or more. The difference between the maximum and the minimum of Raman shifts corresponding to the E2H phonon mode in a region except for a region from the outer periphery in the surface of the gallium nitride crystal substrate to a line 5 mm radially inward from the outer periphery of the surface is 0.5 cm−1 or less. And also affords semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates.

摘要翻译： 提供了当制造半导体器件时可以减少GaN晶体衬底中的裂纹和断裂的发生的GaN晶体衬底，包括它们的半导体器件，半导体器件的制造方法以及识别GaN晶体衬底的方法。 氮化镓晶体基板的表面积为10cm 2以上。 在除了从氮化镓晶体基板的表面的外周到管线5mm的区域以外的区域中，对应于E＆lt; 2H＆gt;声子模式的拉曼位移的最大值和最小值之间的差异 从表面的外周向内径向内侧为0.5cm -1以下。 并且还提供包括它们的半导体器件，制造半导体器件的方法以及识别GaN晶体衬底的方法。

公开(公告)号：US08421190B2

公开(公告)日：2013-04-16

申请号：US12899942

申请日：2010-10-07

申请人： Takuji Okahisa ,  Hideaki Nakahata ,  Seiji Nakahata

发明人： Takuji Okahisa ,  Hideaki Nakahata ,  Seiji Nakahata

IPC分类号： H01L29/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02647

摘要： A method of manufacturing a group III nitride semiconductor substrate includes the growth step of epitaxially growing a first group III nitride semiconductor layer on an underlying substrate, and the process step of forming a first group III nitride semiconductor substrate by cutting and/or surface-polishing the first group III nitride semiconductor layer. In the growth step, at least one element selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb is added as an impurity element by at least 1×1017 cm−3 to the first group III nitride semiconductor layer. A group III nitride semiconductor substrate having controlled resistivity and low dislocation density and a manufacturing method thereof can thus be provided.

摘要翻译： 制造III族氮化物半导体衬底的方法包括在下面的衬底上外延生长第一III族氮化物半导体层的生长步骤，以及通过切割和/或表面抛光形成第一III族氮化物半导体衬底的工艺步骤 第一III族氮化物半导体层。 在生长步骤中，将选自C，Mg，Fe，Be，Zn，V和Sb中的至少一种元素作为杂质元素添加至至少1×1017cm-3至第一III族氮化物 半导体层。 因此可以提供具有受阻电阻率和位错密度低的III族氮化物半导体衬底及其制造方法。

公开(公告)号：US08097528B2

公开(公告)日：2012-01-17

申请号：US12711507

申请日：2010-02-24

申请人： Takuji Okahisa ,  Hideaki Nakahata ,  Koji Uematsu

发明人： Takuji Okahisa ,  Hideaki Nakahata ,  Koji Uematsu

IPC分类号： H01L21/20

CPC分类号： H01L31/18 ,  C30B25/02 ,  C30B29/403 ,  H01L29/045

摘要： A manufacturing method of a nitride substrate includes the steps of: preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the step of heating the ground substrate, HCl and NH3 are supplied into the reactor so that partial pressure PHCl satisfies (1.5+0.0005p) kPa≦PHCl≦(4+0.0005p) kPa and partial pressure PNH3 satisfies (15−0.0009p) kPa≦PNH3≦(26−0.0017p) kPa, whereby an AlxGayIn1-x-yN crystal (0≦x

摘要翻译： 氮化物衬底的制造方法包括以下步骤：制备接地衬底; 在地基底上形成掩模; 将接地衬底放置在反应器中，并将接地衬底加热至850℃至1100℃的温度。在加热接地衬底的步骤中，将HCl和NH 3供应到反应器中，使得分压PHCl满足（ 1.5 + 0.0005p）kPa＆nlE; PHCl＆nlE;（4 + 0.0005p）kPa，分压PNH3满足（15-0.0009p）kPa＆nlE; PNH3＆nlE;（26-0.0017p）kPa，由此得到AlxGayIn1-x-yN晶体（0＆ x <1,0

公开(公告)号：US07995267B2

公开(公告)日：2011-08-09

申请号：US12510267

申请日：2009-07-28

申请人： Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

发明人： Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

IPC分类号： G02F1/35

CPC分类号： G02F1/3558 ,  G02F1/353 ,  G02F2001/3548

摘要： Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter (10a) is provided with the following steps. At first, crystal is grown. Then a first crystal (11) and a second crystal (12) are formed by sectioning the crystal into two or more in such a way that the domains are the reverse of each other. The first and second crystals (11) and (12) are then interlocked in such a way that a domain inversion structure in which the polar directions of the first and second crystals (11) and (12) periodically reverse along an optical waveguide (13) is formed, and the domain inversion structure satisfies quasi-phase-matching conditions for an incoming beam (101).

摘要翻译： 提供一种波长转换器制造方法和波长转换器，由此能够提高透射率。 制造波长转换器（10a）的方法具有以下步骤。 起初，晶体生长。 然后通过将晶体分成两个或更多个使得畴相反的方式形成第一晶体（11）和第二晶体（12）。 然后将第一和第二晶体（11）和（12）互锁，使得第一和第二晶体（11）和（12）的极性方向沿着光波导（13）周期性地反转的畴反转结构 ），域反转结构满足入射光束（101）的准相位匹配条件。