公开(公告)号：US20060249394A1

公开(公告)日：2006-11-09

申请号：US11251630

申请日：2005-10-14

申请人： Renhe Jia ,  You Wang ,  Zhihong Wang ,  Jie Diao ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

发明人： Renhe Jia ,  You Wang ,  Zhihong Wang ,  Jie Diao ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

IPC分类号： C09K13/00 ,  B23H9/00 ,  C25F3/00 ,  C09K13/06

CPC分类号： C25F3/02 ,  B23H5/08 ,  C09K3/1463

摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除 导电材料层。

公开(公告)号：US20060196778A1

公开(公告)日：2006-09-07

申请号：US11342179

申请日：2006-01-27

申请人： Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Huyen Tran ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

发明人： Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Huyen Tran ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

IPC分类号： B23H9/00 ,  C25D17/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/08

摘要： Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.

摘要翻译： 提供钨的抛光方法。 在ECMP期间，增加焊盘的电压并不总是足以提高抛光速率。 抛光钨时，简单地增加施加的电压将在某些情况下实际上降低去除率。 通过增加抛光垫和基板之间的下压力，施加电压以及基板和抛光垫的旋转速度，钨去除率也将增加。

公开(公告)号：US08586481B2

公开(公告)日：2013-11-19

申请号：US13105658

申请日：2011-05-11

申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

公开(公告)号：US08337278B2

公开(公告)日：2012-12-25

申请号：US12203726

申请日：2008-09-03

申请人： Ignasi Palou-Rivera ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Ignasi Palou-Rivera ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00

CPC分类号： B24B37/042 ,  B24B49/02 ,  B24B49/12

摘要： Systems and methods for performing one or more measurements of a substrate at one or more radii along the substrate are described. Thickness measurements taken at various radii along the substrate can be averaged together to obtain an average value that reflects an overall substrate thickness. A more accurate measurement of the overall substrate thickness can be obtained by performing multiple measurements and averaging the measurements together. Using the average value, polishing can be adjusted to ensure that the substrate achieves a desired planarized thickness profile.

摘要翻译： 描述了在沿着衬底的一个或多个半径处进行衬底的一个或多个测量的系统和方法。 可以将沿着衬底的不同半径处的厚度测量值一起平均，以获得反映整个衬底厚度的平均值。 通过执行多次测量并将测量值平均化可以获得整个基板厚度的更准确的测量。 使用平均值，可以调整抛光以确保基板达到期望的平坦化厚度分布。

公开(公告)号：US08172643B2

公开(公告)日：2012-05-08

申请号：US12420996

申请日：2009-04-09

申请人： Alpay Yilmaz ,  Allen L. D'Ambra ,  Jagan Rangarajan ,  Lakshmanan Karuppiah

发明人： Alpay Yilmaz ,  Allen L. D'Ambra ,  Jagan Rangarajan ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00 ,  B24B5/00

CPC分类号： B24B37/04 ,  B24B41/047 ,  B24B45/003

摘要： Embodiments described herein relate to a track system in a polishing system. One embodiment described herein provides a track system configured to transfer polishing heads in a polishing system. The track system comprises a supporting frame, a track coupled to the supporting frame and defining a path along which the polishing heads are configured to move, and one or more carriages configured to carry at least one polishing head along the path defined by the track, wherein the one or more carriages are coupled to the track and independently movable along the track.

摘要翻译： 本文所述的实施例涉及抛光系统中的轨道系统。 本文所述的一个实施例提供了一种配置成在抛光系统中传送抛光头的轨道系统。 轨道系统包括支撑框架，轨道，其联接到支撑框架并且限定抛光头被配置为移动的路径，以及一个或多个托架，其构造成沿着由轨道限定的路径承载至少一个抛光头， 其中所述一个或多个托架联接到所述轨道并且可以沿着所述轨道独立地移动。

公开(公告)号：US20120064801A1

公开(公告)日：2012-03-15

申请号：US13223159

申请日：2011-08-31

申请人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B37/30 ,  B24B49/12 ,  G01B11/0683

摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

摘要翻译： 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间，用原位监测系统监测基底以产生测量序列。 测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。 对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。

公开(公告)号：US20110294293A1

公开(公告)日：2011-12-01

申请号：US13105658

申请日：2011-05-11

申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

IPC分类号： H01L21/306

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

公开(公告)号：US20100285666A1

公开(公告)日：2010-11-11

申请号：US12757767

申请日：2010-04-09

申请人： JIE DIAO ,  Garlen C. Leung ,  Christopher Heung-Gyun Lee ,  Lakshmanan Karuppiah

发明人： JIE DIAO ,  Garlen C. Leung ,  Christopher Heung-Gyun Lee ,  Lakshmanan Karuppiah

IPC分类号： H01L21/306

CPC分类号： H01L21/31053 ,  B24B37/042 ,  B24B37/245 ,  H01L21/76229

摘要： A method and apparatus for polishing or planarizing a pre-metal dielectric layer by a chemical mechanical polishing process are provided. The method comprises providing a semiconductor substrate having feature definitions formed thereon, forming a pre-metal dielectric layer over the substrate, wherein the as-deposited pre-metal dielectric layer has an uneven surface topography, and planarizing the uneven surface topography of the pre-metal dielectric layer using chemical mechanical polishing techniques, wherein planarizing the uneven surface topography comprises polishing the pre-metal dielectric layer with a fixed abrasive polishing pad and a first polishing composition to remove a bulk portion of the pre-metal dielectric layer and achieve a first predetermined planarity, and polishing the pre-metal dielectric layer with a non-abrasive polishing pad and high selectivity slurry to remove a residual portion of the pre-metal dielectric and achieve a second predetermined planarity.

摘要翻译： 提供了一种通过化学机械抛光工艺抛光或平坦化预金属介电层的方法和设备。 该方法包括提供其上形成有特征定义的半导体衬底，在衬底上形成预金属介电层，其中所沉积的预金属介电层具有不平坦的表面形貌，并且平坦化前预处理电介质层的不平坦表面形貌， 使用化学机械抛光技术的金属介电层，其中平坦化所述不平坦表面形貌包括用固定的研磨抛光垫和第一抛光组合物抛光所述预金属介电层，以去除所述金属前介电层的主体部分并实现第一 预定的平面度，以及用非磨料抛光垫和高选择性浆料抛光预金属介电层，以去除前金属电介质的剩余部分并实现第二预定平面度。

公开(公告)号：US20100261413A1

公开(公告)日：2010-10-14

申请号：US12822096

申请日：2010-06-23

申请人： Abraham Ravid ,  Boguslaw A. Swedek ,  Jeffrey Drue David ,  Jun Qian ,  Ingemar Carlsson ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Lakshmanan Karuppiah

发明人： Abraham Ravid ,  Boguslaw A. Swedek ,  Jeffrey Drue David ,  Jun Qian ,  Ingemar Carlsson ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Lakshmanan Karuppiah

IPC分类号： B24B49/02 ,  B24B49/12

CPC分类号： G01B11/0683 ,  G01B11/0625 ,  Y10S707/99936

摘要： A method of determining a physical property of a substrate includes recording a first spectrum obtained from a substrate, the first spectrum being obtained during a polishing process that alters a physical property of the substrate. The method includes identifying, in a database, at least one of several previously recorded spectra that is similar to the recorded first spectrum. Each of the spectra in the database has a physical property value associated therewith. The method includes generating a signal indicating that a first value of the physical property is associated with the first spectrum, the first value being determined using the physical property value associated with the identified previously recorded spectrum in the database. A system for determining a physical property of a substrate includes a polishing machine, an endpoint determining module, and a database.

摘要翻译： 确定基板的物理性质的方法包括记录从基板获得的第一光谱，第一光谱是在改变基板的物理性质的抛光工艺期间获得的第一光谱。 该方法包括在数据库中识别与记录的第一光谱相似的几个先前记录的光谱中的至少一个。 数据库中的每个光谱具有与之相关联的物理属性值。 该方法包括产生指示物理属性的第一值与第一频谱相关联的信号，第一值使用与数据库中所识别的先前记录的频谱相关联的物理属性值来确定。 用于确定基板的物理性质的系统包括抛光机，端点确定模块和数据库。

公开(公告)号：US07774086B2

公开(公告)日：2010-08-10

申请号：US12185719

申请日：2008-08-04

申请人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  H01L21/00 ,  B24B49/00

CPC分类号： B24B49/12 ,  B24B37/013 ,  B24B37/205 ,  B24B49/08 ,  B24D7/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L22/26

摘要： A computer program product that determines a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matches the spectra with indexes in a library and uses the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached.

摘要翻译： 确定抛光终点的计算机程序产品包括在抛光序列的不同时间内从基板上的不同区域获得光谱，将光谱与库中的索引匹配，并使用该指标来确定每个不同区域的抛光速率 指标。 可以为一个区域确定调整的抛光速率，这导致当达到抛光结束时间时，基板具有期望的轮廓。