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46 条记录 (耗时 0.047 秒)

    Integrated plasma chamber and inductively-coupled toroidal plasma source
    31.
    发明授权
    Integrated plasma chamber and inductively-coupled toroidal plasma source 有权
    集成等离子体室和电感耦合环形等离子体源

    公开(公告)号：US06924455B1

    公开(公告)日：2005-08-02

    申请号：US09774165

    申请日：2001-01-26

    申请人： Xing Chen ,  Donald K. Smith ,  William M. Holber

    发明人： Xing Chen ,  Donald K. Smith ,  William M. Holber

    IPC分类号： H01J27/16 ,  H01J37/32 ,  B23K10/00

    CPC分类号： H01J37/32009 ,  H01J27/16 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

    摘要： A material processing apparatus having an integrated toroidal plasma source is described. The material processing apparatus includes a plasma chamber that comprises a portion of an outer surface of a process chamber. A transformer having a magnetic core surrounds a portion of the plasma chamber. The transformer has a primary winding. A solid state AC switching power supply comprising one or more switching semiconductor devices is coupled to a voltage supply and has an output that is coupled to the primary winding. The solid state AC switching power supply drives an AC current in the primary winding that induces an AC potential inside the chamber that directly forms a toroidal plasma that completes a secondary circuit of the transformer and dissociates the gas.

    摘要翻译： 描述了具有集成环形等离子体源的材料处理装置。 材料处理装置包括等离子体室，其包括处理室的外表面的一部分。 具有磁芯的变压器包围等离子体室的一部分。 变压器有一个初级绕组。 包括一个或多个开关半导体器件的固态AC开关电源耦合到电压源并具有耦合到初级绕组的输出。 固态交流开关电源驱动初级绕组中的交流电流，其在室内引起AC电位，其直接形成环形等离子体，其完成变压器的次级电路并解离气体。

    Toroidal low-field reactive gas source
    33.
    发明授权
    Toroidal low-field reactive gas source 有权
    环形低场反应气源

    公开(公告)号：US06388226B1

    公开(公告)日：2002-05-14

    申请号：US09502087

    申请日：2000-02-10

    申请人： Donald K. Smith ,  Xing Chen ,  William M. Holber ,  Eric Georgelis

    发明人： Donald K. Smith ,  Xing Chen ,  William M. Holber ,  Eric Georgelis

    IPC分类号： B23K1000

    CPC分类号： H01J37/32009 ,  H01J27/16 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

    摘要： An improved toroidal low-field plasma source allows plasma ignition within a wider range of gas conditions than permitted by prior art plasma sources. Power efficiency of the plasma source is improved by automatically adjusting the power delivered to the plasma based on the load to the power supply. The plasma source can be operated over a wider pressure range than allowed by prior art plasma sources. The plasma source can be operated so as to increase the output of atomic species from the source. The plasma source can be operated to increase the etch rate of organic materials. The plasma source can efficiently remove hazardous gas compounds from effluent gas streams by converting them into scrubbable products.

    摘要翻译： 改进的环形低场等离子体源允许在比现有技术的等离子体源允许的更宽的气体条件范围内等离子体点火。 通过根据对电源的负载自动调节输送到等离子体的功率来提高等离子体源的功率效率。 等离子体源可以在比现有技术的等离子体源允许的更宽的压力范围内操作。 可以操作等离子体源，以便增加来自源的原子物质的输出。 可以操作等离子体源以增加有机材料的蚀刻速率。 通过将等离子体源转换成可擦洗的产品，等离子体源可以有效地从废气流中去除有害气体化合物。

    Inductively-coupled torodial plasma source
    35.
    发明授权
    Inductively-coupled torodial plasma source 有权
    电感耦合等离子体源

    公开(公告)号：US07166816B1

    公开(公告)日：2007-01-23

    申请号：US10837912

    申请日：2004-05-03

    申请人： Xing Chen ,  William M. Holber ,  Andrew Barnett Cowe ,  Eric Georgelis ,  Ilya M. Bystyak ,  Andrzej Bortkiewicz

    发明人： Xing Chen ,  William M. Holber ,  Andrew Barnett Cowe ,  Eric Georgelis ,  Ilya M. Bystyak ,  Andrzej Bortkiewicz

    IPC分类号： B23K10/00

    CPC分类号： H05H1/46 ,  H05H2001/4667 ,  H05H2001/4682

    摘要： Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding. The first AC current and the second AC current induce a combined AC potential inside the plasma chamber that directly forms a toroidal plasma that completes a secondary circuit of the transformer and that dissociates the gas.

    摘要翻译： 用于解离气体的装置包括包含气体的等离子体室。 具有第一磁芯的第一变压器包围等离子体室的第一部分并且具有第一初级绕组。 具有第二磁芯的第二变压器包围等离子体室的第二部分并且具有第二初级绕组。 包括一个或多个切换半导体器件的第一固态AC开关电源耦合到第一电压源并且具有耦合到第一初级绕组的第一输出。 包括一个或多个开关半导体器件的第二固态AC开关电源耦合到第二电压源，并且具有耦合到第二初级绕组的第二输出。 第一固态交流开关电源驱动第一初级绕组中的第一交流电流。 第二固态交流开关电源驱动第二初级绕组中的第二交流电流。 第一AC电流和第二AC电流引起等离子体室内的组合AC电位，其直接形成环形等离子体，其完成变压器的次级电路并且解离气体。

    Inductively-coupled toroidal plasma source
    36.
    发明授权
    Inductively-coupled toroidal plasma source 有权
    电感耦合环形等离子体源

    公开(公告)号：US06815633B1

    公开(公告)日：2004-11-09

    申请号：US09804650

    申请日：2001-03-12

    申请人： Xing Chen ,  William M. Holber ,  Andrew Barnett Cowe ,  Eric Georgelis ,  Ilya M. Bystyak ,  Andrzej Bortkiewicz

    发明人： Xing Chen ,  William M. Holber ,  Andrew Barnett Cowe ,  Eric Georgelis ,  Ilya M. Bystyak ,  Andrzej Bortkiewicz

    IPC分类号： B23K1000

    CPC分类号： H01J37/32009 ,  H01J27/16 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

    摘要： Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding. The first AC current and the second AC current induce a combined AC potential inside the plasma chamber that directly forms a toroidal plasma that completes a secondary circuit of the transformer and that dissociates the gas.

    Etching of silicon dioxide selectively to silicon nitride and polysilicon
    39.
    发明授权
    Etching of silicon dioxide selectively to silicon nitride and polysilicon 失效
    二氧化硅选择性地蚀刻到氮化硅和多晶硅

    公开(公告)号：US5505816A

    公开(公告)日：1996-04-09

    申请号：US168887

    申请日：1993-12-16

    申请人： Michael S. Barnes ,  John H. Keller ,  William M. Holber ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Dragan Podlesnik

    发明人： Michael S. Barnes ,  John H. Keller ,  William M. Holber ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Dragan Podlesnik

    IPC分类号： H01L21/311 ,  H01L21/00

    CPC分类号： H01L21/31116 ,  Y10S438/906

    摘要： Silicon dioxide on a substrate is directionally etched using a hydrogen halide plasma which is created within an etch chamber. The method selectively etches silicon dioxide relative to polysilicon and silicon nitride. A substrate and the combination of NH.sub.3 and NF.sub.3 gases or the combination of CF.sub.4 and O.sub.2 gases mixed with H.sub.2 and N.sub.2 gases are located within an etch chamber. An electrical field is created within the etch chamber causing the gas mixture to form a plasma. The negative charge at the bottom of the chamber attracts the positively charged plasma, thereby etching the substrate in the downward direction. The result is an anisotropic product. The method is also shown to be effective in non-selectively etching thermal and deposited oxides, resulting in a similar etch rate for the different types of oxides.

    摘要翻译： 使用在蚀刻室内产生的卤化氢等离子体对衬底上的二氧化硅进行定向蚀刻。 该方法选择性地相对于多晶硅和氮化硅蚀刻二氧化硅。 衬底和NH3和NF3气体的组合或与H 2和N 2气体混合的CF 4和O 2气体的组合位于蚀刻室内。 在蚀刻室内产生电场，使得气体混合物形成等离子体。 室底部的负电荷吸引带正电的等离子体，从而沿向下的方向蚀刻衬底。 其结果是各向异性产品。 该方法还显示在非选择性蚀刻热和沉积氧化物中有效，导致不同类型氧化物的蚀刻速率相似。