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272 条记录 (耗时 0.031 秒)

    METHOD AND APPARATUS FOR PERFORMING A POLISHING PROCESS IN SEMICONDUCTOR FABRICATION
    31.
    发明申请
    METHOD AND APPARATUS FOR PERFORMING A POLISHING PROCESS IN SEMICONDUCTOR FABRICATION 审中-公开
    用于在半导体制造中执行抛光工艺的方法和装置

    公开(公告)号：US20130078810A1

    公开(公告)日：2013-03-28

    申请号：US13240856

    申请日：2011-09-22

    申请人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： H01L21/302 ,  B24B53/00 ,  B24B7/00

    CPC分类号： B24B37/32 ,  B24B9/065

    摘要： The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.

    摘要翻译： 本公开提供了一种用于制造半导体器件的装置。 该装置包括可操作以对晶片执行抛光处理的抛光头。 该装置包括可旋转地联接到抛光头的保持环。 保持环可操作以固定要抛光的晶片。 该装置包括位于保持环内的软材料部件。 软材料组分比硅软。 柔性材料部件可操作以在抛光过程中研磨晶片的斜面区域。 该装置包括可旋转地联接到抛光头的喷嘴。 喷射喷嘴可操作以在抛光过程中将清洁溶液分配到晶片的斜面区域。

    Apparatus and Methods for Movable Megasonic Wafer Probe
    32.
    发明申请
    Apparatus and Methods for Movable Megasonic Wafer Probe 有权
    移动式超声波晶圆探头的装置和方法

    公开(公告)号：US20130056031A1

    公开(公告)日：2013-03-07

    申请号：US13226216

    申请日：2011-09-06

    申请人： Ying-Hsueh Chang Chien ,  Shao-Yen Ku ,  Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Ying-Hsueh Chang Chien ,  Shao-Yen Ku ,  Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： B08B7/04

    CPC分类号： B08B3/12 ,  B08B3/02 ,  H01L21/67028 ,  H01L21/6704

    摘要： Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.

    摘要翻译： 移动式超声波晶片探针的方法和装置。 公开了一种方法，包括将可移动探针定位在晶片表面上，所述可移动探针具有暴露晶片表面的一部分的开放底部; 通过可移动探针的底部将液体施加到晶片表面上; 并且以预定的扫描速度移动可移动探针以穿过晶片表面，同时在晶片表面上移动时将液体施加到晶片表面。 在另外的实施例中，该方法包括提供用于将兆声波能量施加到晶片表面的换能器。 公开了包括可移动兆声晶片探针的装置实施例。

    CHEMICAL DISPERSION METHOD AND DEVICE
    33.
    发明申请
    CHEMICAL DISPERSION METHOD AND DEVICE 审中-公开
    化学分散方法和装置

    公开(公告)号：US20130034966A1

    公开(公告)日：2013-02-07

    申请号：US13198420

    申请日：2011-08-04

    申请人： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chi-Wen Liu ,  Chin-Hsiang Lin

    发明人： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chi-Wen Liu ,  Chin-Hsiang Lin

    IPC分类号： H01L21/306 ,  B05B1/00

    CPC分类号： H01L21/32134 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708

    摘要： A method of semiconductor fabrication including providing a semiconductor wafer and dispensing a first chemical spray onto the wafer using a first nozzle and dispensing a second chemical spray using a second nozzle onto the wafer. These dispensing may be performed simultaneously. The method may further include moving the first and second nozzle. The first and second nozzle may provide the first and second chemical spray having at least one different property. For example, different chemical compositions, concentrations, temperatures, angles of dispensing, or flow rate. A chemical dispersion apparatus providing two nozzles which are operable to be separately controlled is also provided.

    摘要翻译： 一种半导体制造方法，包括提供半导体晶片并使用第一喷嘴将第一化学喷雾分配到晶片上，并且使用第二喷嘴将第二化学喷雾分配到晶片上。 这些分配可以同时进行。 该方法还可以包括移动第一和第二喷嘴。 第一和第二喷嘴可以提供具有至少一种不同性质的第一和第二化学喷雾。 例如，不同的化学成分，浓度，温度，分配角度或流速。 还提供了提供可分开控制的两个喷嘴的化学分散装置。

    Beam monitoring device, method, and system
    34.
    发明授权
    Beam monitoring device, method, and system 有权
    光束监测装置，方法和系统

    公开(公告)号：US08766207B2

    公开(公告)日：2014-07-01

    申请号：US13241392

    申请日：2011-09-23

    申请人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： H01J37/244

    CPC分类号： H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

    摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.

    摘要翻译： 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。

    Metal conductor chemical mechanical polish
    35.
    发明授权
    Metal conductor chemical mechanical polish 有权
    金属导体化学机械抛光

    公开(公告)号：US08673783B2

    公开(公告)日：2014-03-18

    申请号：US12829664

    申请日：2010-07-02

    申请人： Huang Soon Kang ,  Han-Hsin Kuo ,  Chi-Ming Yang ,  Shwang-Ming Jeng ,  Chin-Hsiang Lin

    发明人： Huang Soon Kang ,  Han-Hsin Kuo ,  Chi-Ming Yang ,  Shwang-Ming Jeng ,  Chin-Hsiang Lin

    IPC分类号： H01L21/302

    CPC分类号： H01L23/5386 ,  H01L21/02074 ,  H01L21/28079 ,  H01L21/67011 ,  H01L21/7684 ,  H01L29/495 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.

    摘要翻译： 本公开提供了一种制造半导体器件的方法，通过这种方法制造的半导体器件和用于执行这种方法的化学机械抛光（CMP）工具。 在一个实施例中，制造半导体器件的方法包括在衬底上的电介质层的沟槽中提供包括金属导体的集成电路（IC）晶片，以及执行化学机械抛光（CMP）工艺以平坦化金属导体 和电介质层。 该方法还包括清洁平坦化的金属导体和电介质层以除去CMP工艺中的残留物，用醇漂洗清洁的金属导体和介电层，并在惰性气体环境中干燥漂洗的金属导体和电介质层。

    CMP Groove Depth and Conditioning Disk Monitoring
    37.
    发明申请
    CMP Groove Depth and Conditioning Disk Monitoring 审中-公开
    CMP沟槽深度和调节盘监控

    公开(公告)号：US20130217306A1

    公开(公告)日：2013-08-22

    申请号：US13397845

    申请日：2012-02-16

    申请人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： B24B49/16 ,  B24B49/18

    CPC分类号： B24B49/16 ,  B24B37/005 ,  B24B49/18

    摘要： Some embodiments relate to a chemical mechanical polishing (CMP) system. The CMP system includes a polishing pad having a polishing surface, and a wafer carrier to retain a wafer proximate to the polishing surface during polishing. A motor assembly rotates the polishing pad and concurrently rotates the wafer during polishing of the wafer. A conditioning disk has a conditioning surface that is in frictional engagement with the polishing surface during polishing. A torque measurement element measures a torque exerted by the motor assembly during polishing. A condition surface analyzer determines a surface condition of the conditioning surface or the polishing surface based on the measured torque. Other systems and methods are also disclosed.

    摘要翻译： 一些实施方案涉及化学机械抛光（CMP）系统。 CMP系统包括具有抛光表面的抛光垫和在抛光期间将晶片保持靠近抛光表面的晶片载体。 电机组件旋转抛光垫并在晶片抛光期间同时旋转晶片。 调理盘具有在抛光期间与抛光表面摩擦接合的调节表面。 扭矩测量元件测量在抛光期间由电动机组件施加的扭矩。 条件表面分析器基于测量的扭矩来确定调节表面或抛光表面的表面状态。 还公开了其它系统和方法。

    CMP Pad Cleaning Apparatus
    38.
    发明申请
    CMP Pad Cleaning Apparatus 有权
    CMP垫清洁装置

    公开(公告)号：US20130210323A1

    公开(公告)日：2013-08-15

    申请号：US13396854

    申请日：2012-02-15

    申请人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： B24B1/00 ,  B24B41/06

    CPC分类号： B24B53/017

    摘要： The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.

    摘要翻译： 本公开内容涉及增强抛光垫清洁以防止晶片划伤和化学机械抛光（CMP）工艺中的污染的两相清洁元件。 在一些实施例中，两相垫清洁元件包括第一清洁元件和第二清洁元件，其被配置为在CMP抛光垫的一部分上连续操作。 第一清洁元件包括配置为利用空穴能量去除嵌入在CMP抛光垫中的颗粒而不损坏抛光垫的表面的兆声波清洗喷嘴。 第二清洁元件构造成施加包括两种流体的高压雾以从CMP抛光垫移除副产物。 通过使用兆声波清洗来移除嵌入式颗粒的双液雾以冲走副产物（例如，包括移出的嵌入颗粒），两相垫清洁元件增强了抛光垫清洁。

    ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL
    39.
    发明申请
    ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL 有权
    离子植入与充电和方向控制

    公开(公告)号：US20130140987A1

    公开(公告)日：2013-06-06

    申请号：US13308614

    申请日：2011-12-01

    申请人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： H01J37/06

    CPC分类号： H01J37/026 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/06 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/31705

    摘要： The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

    摘要翻译： 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。