公开(公告)号：US20080286697A1

公开(公告)日：2008-11-20

申请号：US11977913

申请日：2007-10-26

Applicant: Steven Verhaverbeke ,  J Kelly Truman ,  Christopher T. Lane ,  Sasson R. Somekh

Inventor： Steven Verhaverbeke ,  J Kelly Truman ,  Christopher T. Lane ,  Sasson R. Somekh

IPC: G03F7/20

CPC classification number: H01L21/67161 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67225

Abstract: A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.

公开(公告)号：US07449127B2

公开(公告)日：2008-11-11

申请号：US11145304

申请日：2005-06-03

Applicant: Steven Verhaverbeke ,  J. Kelly Truman

Inventor： Steven Verhaverbeke ,  J. Kelly Truman

IPC: C09K13/00 ,  C08K13/06 ,  H01L21/302

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/67051 ,  Y10S261/07

Abstract: The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

Abstract translation: 本发明是一种新颖的清洁方法和用于单晶片清洗工艺的解决方案。 根据本发明，清洗溶液包含氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2），水（H O 2）和螯合剂。 在本发明的一个实施方案中，清洁溶液还含有表面活性剂。 而且本发明还有另一个实施方案，清洗溶液还包括溶解气体，例如H 2。 在本发明的一个具体实施方案中，该溶液通过喷雾或分配在旋转晶片上而被使用。

公开(公告)号：US20080087970A1

公开(公告)日：2008-04-17

申请号：US11977591

申请日：2007-10-24

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L29/78

CPC classification number: H01L29/513 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/28194 ,  H01L21/31675 ,  H01L29/517 ,  H01L29/78 ,  Y10S438/905

Abstract: Described herein are methods of forming a thin silicon dioxide layer having a thickness of less than eight angstroms on a semiconductor substrate to form the bottom layer of a gate dielectric. A silicon dioxide layer having a thickness of less than eight angstroms may be formed by two different methods. In one method, a sulfuric acid solution is applied to a semiconductor substrate to grow a silicon dioxide layer of less than eight angstroms. The growth of the silicon dioxide layer by the sulfuric acid solution is self-limiting. In another method, a hydrogen peroxide containing solution is applied to a semiconductor substrate for a time sufficient to grow a silicon dioxide layer having a thickness of greater than eight angstroms and then applying an etching solution to etch the silicon dioxide layer down to a thickness of less than eight angstroms.

公开(公告)号：US07201808B2

公开(公告)日：2007-04-10

申请号：US10407953

申请日：2003-04-04

Applicant: Ho-man Rodney Chiu ,  Steven Verhaverbeke ,  John S. Lewis

Inventor： Ho-man Rodney Chiu ,  Steven Verhaverbeke ,  John S. Lewis

IPC: B08B11/02 ,  B23B5/00

CPC classification number: B08B17/00 ,  B08B3/02 ,  H01L21/67051 ,  Y10S134/902 ,  Y10T279/25

Abstract: An apparatus that includes a rotatable single wafer holding bracket with one or more wafer supports disposed on the single wafer holding bracket, wherein the one or more wafer supports position a center of a wafer to be off-center from an axis of rotation of the single wafer holding bracket.

Abstract translation: 一种装置，其包括可旋转的单个晶片保持支架，其具有设置在所述单个晶片保持支架上的一个或多个晶片支撑件，其中所述一个或多个晶片支撑件将晶片的中心定位在离所述单个晶片保持支架的旋转轴线偏离中心 晶圆支架。

公开(公告)号：US07159599B2

公开(公告)日：2007-01-09

申请号：US10229446

申请日：2002-08-27

Applicant: Steven Verhaverbeke ,  J Kelly Truman ,  Christopher T Lane ,  Sasson R Somekh

Inventor： Steven Verhaverbeke ,  J Kelly Truman ,  Christopher T Lane ,  Sasson R Somekh

IPC: B08B3/00

CPC classification number: H01L21/67161 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67225

Abstract: A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.

公开(公告)号：US20060286783A1

公开(公告)日：2006-12-21

申请号：US11154211

申请日：2005-06-15

Applicant: James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

Inventor： James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

IPC: H01L21/04 ,  H01L21/302

CPC classification number: H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

Abstract: A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

Abstract translation: 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

公开(公告)号：US20060264343A1

公开(公告)日：2006-11-23

申请号：US11497486

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman

Inventor： Steven Verhaverbeke ,  J. Truman

IPC: A61K8/00

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/67051 ,  Y10S261/07

Abstract: The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

Abstract translation: 本发明是一种新颖的清洁方法和用于单晶片清洗工艺的解决方案。 根据本发明，清洗溶液包含氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2），水（H O 2）和螯合剂。 在本发明的一个实施方案中，清洁溶液还含有表面活性剂。 而且本发明还有另一个实施方案，清洗溶液还包括溶解气体，例如H 2。 在本发明的一个具体实施方案中，该溶液通过喷雾或分配在旋转晶片上而被使用。

公开(公告)号：US20060260659A1

公开(公告)日：2006-11-23

申请号：US11496936

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B3/12 ,  B08B3/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060260643A1

公开(公告)日：2006-11-23

申请号：US11497405

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B6/00 ,  C23G1/00 ,  B08B7/00 ,  B08B3/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060107970A1

公开(公告)日：2006-05-25

申请号：US10997194

申请日：2004-11-23

Applicant: Steven Verhaverbeke ,  Dennis Yost ,  Roman Gouk

Inventor： Steven Verhaverbeke ,  Dennis Yost ,  Roman Gouk

IPC: B08B3/12 ,  C23G1/00 ,  B08B7/00

CPC classification number: H01L21/02052 ,  H01L21/31111 ,  H01L21/67051

Abstract: According to one aspect of the present invention, a method and apparatus for cleaning a semiconductor substrate is provided. The method may include supporting a semiconductor substrate, the semiconductor substrate having a surface, and dispensing an amount of semiconductor substrate processing liquid onto the surface of the semiconductor substrate, the amount of semiconductor substrate processing liquid being such that substantially none of the semiconductor substrate processing liquid flows off the surface of the semiconductor substrate. The semiconductor substrate processing fluid may form a standing puddle on the surface of the semiconductor substrate. The semiconductor substrate may be rotated while the semiconductor substrate processing liquid is on the surface of the semiconductor substrate such that substantially all of the amount of semiconductor substrate processing liquid remains on the surface of the semiconductor substrate during said rotation.