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93 条记录 (耗时 0.042 秒)

    Oscillators and method of operating the same
    31.
    发明申请
    Oscillators and method of operating the same 审中-公开
    振荡器和操作方法相同

    公开(公告)号：US20120038428A1

    公开(公告)日：2012-02-16

    申请号：US12929388

    申请日：2011-01-20

    申请人： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

    发明人： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

    IPC分类号： H03B5/02

    CPC分类号： H03B15/006

    摘要： Oscillators and a method of operating the same are provided, the oscillators include at least one oscillation device including a first magnetic layer having a magnetization direction that is variable, a second magnetic layer having a pinned magnetization direction, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer. The oscillation device is configured to generate a signal having a set frequency. The oscillators further include a driving transistor having a drain connected to the at least one oscillation device, and a gate to which a control signal for controlling driving of the oscillation device is applied.

    摘要翻译： 提供了振荡器及其操作方法，所述振荡器包括至少一个振荡器件，该振荡器件包括具有可变磁化方向的第一磁性层，具有钉扎​​磁化方向的第二磁性层和设置在第二磁性层之间的非磁性层 第一磁性层和第二磁性层。 振荡装置被配置为产生具有设定频率的信号。 振荡器还包括具有连接到至少一个振荡装置的漏极的驱动晶体管，以及施加用于控制振荡装置的驱动的控制信号的栅极。

    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
    35.
    发明申请
    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices 失效
    磁性分组存储器存储设备，包括这种设备的存储器系统以及控制这些设备的方法

    公开(公告)号：US20100208381A1

    公开(公告)日：2010-08-19

    申请号：US12658807

    申请日：2010-02-16

    申请人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    发明人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    IPC分类号： G11B19/02

    CPC分类号： G11C11/15 ,  G11C5/04

    摘要： A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.

    摘要翻译： 存储器件由将磁信息存储在磁结构的多个域中的磁结构构成。 写单元响应于控制信号向磁结构施加写入电流，将信息写入磁结构的多个域中的至少一个。 读取单元通过响应于控制信号向磁性结构施加读取电流，从磁性结构的多个域中的至少一个域读取信息。 畴壁移动控制单元耦合到磁结构的一部分，并且响应于控制信号将存储在磁结构中的多个域中的信息移动到磁结构中的其他区域。 写单元，读单元和域壁移动控制单元都耦合到提供控制信号的相同控制信号线。

    Data storage device having magnetic domain wall motion and method of forming the same
    39.
    发明申请
    Data storage device having magnetic domain wall motion and method of forming the same 失效
    具有磁畴壁运动的数据存储装置及其形成方法

    公开(公告)号：US20080137521A1

    公开(公告)日：2008-06-12

    申请号：US11984478

    申请日：2007-11-19

    申请人： Sung-chul Lee ,  Sung-hoon Choa ,  Kwang-seok Kim

    发明人： Sung-chul Lee ,  Sung-hoon Choa ,  Kwang-seok Kim

    IPC分类号： G11B9/00

    CPC分类号： G11C11/15 ,  G11C19/0841

    摘要： A data storage device using magnetic domain wall motion may include a first magnetic layer having a plurality of magnetic domains. A second magnetic layer may be connected to the first magnetic layer, and a connection layer may be disposed between the first and second magnetic layers. A resistive magnetic layer may be disposed between each of the first and second magnetic layers and the connection layer. Accordingly, when current is supplied to the data storage device to move a magnetic domain wall, the leakage of current in a connection between the magnetic layers may be reduced or prevented, thus conserving power.

    摘要翻译： 使用磁畴壁运动的数据存储装置可以包括具有多个磁畴的第一磁性层。 第二磁性层可以连接到第一磁性层，并且连接层可以设置在第一和第二磁性层之间。 电阻性磁性层可以设置在第一和第二磁性层和连接层中的每一个之间。 因此，当向数据存储装置提供电流以移动磁畴壁时，可以减少或防止磁层之间的连接中的电流泄漏，从而节省功率。

    Semiconductor device using magnetic domain wall movement and method of manufacturing the same
    40.
    发明申请
    Semiconductor device using magnetic domain wall movement and method of manufacturing the same 失效
    使用磁畴壁运动的半导体器件及其制造方法

    公开(公告)号：US20080094887A1

    公开(公告)日：2008-04-24

    申请号：US11727689

    申请日：2007-03-28

    申请人： In-jun Hwang ,  Sung-chul Lee

    发明人： In-jun Hwang ,  Sung-chul Lee

    IPC分类号： G11C11/14

    CPC分类号： G11C11/14 ,  G11C19/0808 ,  G11C19/0841

    摘要： A semiconductor device using a magnetic domain wall movement and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a magnetic layer that is formed on a substrate and has a plurality of magnetic domains, and a unit that supplies energy to move a magnetic domain wall in the magnetic layer. The magnetic layer is formed parallel to the substrate, and includes a plurality of prominences and a plurality of depressions alternately formed along a lengthwise direction thereof. The magnetic layer has a stepped form that secures a reliable movement of the magnetic domain wall in units of one bit.

    摘要翻译： 提供了使用磁畴壁移动的半导体器件和制造该半导体器件的方法。 半导体器件包括形成在基板上并具有多个磁畴的磁性层，以及提供能量以移动磁性层中的磁畴壁的单元。 磁性层与基板平行地形成，并且包括沿其长度方向交替形成的多个凸起和多个凹陷。 磁性层具有阶梯形状，其以一位为单位确保磁畴壁的可靠移动。