Electronic component
    34.
    发明授权

    公开(公告)号:US11357110B2

    公开(公告)日:2022-06-07

    申请号:US17132626

    申请日:2020-12-23

    Abstract: Disclosed herein is an electronic component that includes a first conductive layer including a lower electrode and a first inductor pattern, a dielectric film that covers the lower electrode, an upper electrode laminated on the lower electrode through the dielectric film, an insulating layer that covers the first conductive layer, dielectric film, and upper electrode, and a second conductive layer formed on the insulating layer and including a second inductor pattern. The first and second inductor patterns are connected in parallel through via conductors penetrating the insulating layer.

    Thin film capacitor and circuit board incorporating the same

    公开(公告)号:US11240908B2

    公开(公告)日:2022-02-01

    申请号:US16665503

    申请日:2019-10-28

    Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.

    Thin-film capacitor
    36.
    发明授权

    公开(公告)号:US11114249B2

    公开(公告)日:2021-09-07

    申请号:US16483516

    申请日:2018-02-13

    Abstract: In a thin-film capacitor, an electrode terminal layer and an electrode layer of a capacitor portion are connected to electrode terminals by via conductors that is formed to penetrate an insulating layer in a thickness direction thereof, and a short circuit wiring in the thickness direction is realized by the via conductors. In the thin-film capacitor, an increase in the number of terminals in the plurality of electrode terminals is achieved, a decrease in length of a circuit wiring is achieved, and thus a thin-film capacitor with low-ESL has been achieved.

    Thin-film capacitor
    37.
    发明授权

    公开(公告)号:US10950389B2

    公开(公告)日:2021-03-16

    申请号:US16360405

    申请日:2019-03-21

    Abstract: A thin-film capacitor satisfies a relationship of CTE1>CTE2>CTE3 regarding a linear expansion coefficient CTE1 of a base, a linear expansion coefficient CTE2 of a capacitance unit, and a linear expansion coefficient CTE3 of a barrier layer. The inventors have newly found that in a case in which such a relationship is satisfied, when a temperature falls from a deposition temperature, cracking occurring in the capacitance unit of the thin-film capacitor is prevented, and cracking occurring in the barrier layer is also prevented.

    Electronic component mounting package

    公开(公告)号:US10886219B2

    公开(公告)日:2021-01-05

    申请号:US16478409

    申请日:2018-01-10

    Abstract: An electronic component mounting package includes a semiconductor element which is disposed such that an active surface faces a main surface of a wiring portion, and which is electrically connected to the wiring portion via a first terminal; and a thin film passive element which is disposed between the active surface of the semiconductor element and the main surface of the wiring portion when seen in a lamination direction, and which is electrically connected to the semiconductor element. A part of the first terminal is disposed on an outer side with respect to the thin film passive element in a plan view. A length of the first terminal in the lamination direction disposed on the outer side with respect to the thin film passive element is larger than a thickness of the thin film passive element in the lamination direction.

    Thin-film capacitor
    39.
    发明授权

    公开(公告)号:US10153092B2

    公开(公告)日:2018-12-11

    申请号:US15725860

    申请日:2017-10-05

    Abstract: A thin-film capacitor including a stacked body having a lower electrode layer, a plurality of dielectric layers stacked on the lower electrode layer, one or more internal electrode layers interposed between the dielectric layers, and an upper electrode layer that is stacked on the opposite side of the lower electrode layer with the dielectric layers and the internal electrode layers interposed between, and a cover layer that covers the stacked body. The stacked body includes opening portions that have the lower electrode layer, opens upward in a stacking direction, and has a side surface formed to include an inclined surface. The cover layer is stacked on the inclined surface of the stacked body. A curved surface with a predetermined shape is formed on the inclined surface for each pair of layers including the dielectric layer forming the inclined surface and the electrode layer, forming the inclined surface.

    Terminal structure, and semiconductor element and module substrate comprising the same

    公开(公告)号:US09224706B2

    公开(公告)日:2015-12-29

    申请号:US13960330

    申请日:2013-08-06

    Abstract: A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, formed in a region in the opening on the electrode so that an upper surface of the metal layer is at a position lower than an upper surface of the insulating covering layer in a peripheral edge portion of the opening; and a dome-shaped bump containing Sn and Ti, formed in a region in the opening on the under bump metal layer, wherein an end portion of a boundary between the under bump metal layer and the bump is in contact with an inner wall of the opening portion in the insulating covering layer.

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