公开(公告)号：US12224164B2

公开(公告)日：2025-02-11

申请号：US17514815

申请日：2021-10-29

Applicant: Tokyo Electron Limited

Inventor： Chelsea Dubose ,  Barton Lane ,  Merritt Funk ,  Justin Moses ,  Yohei Yamazawa

IPC: H01J37/32

Abstract: A radio frequency (RF) system including: a first conductive covering surface, a portion of the first conductive covering surface including a portion of the first outer wall of a first RF device; a second conductive covering surface aligned to the first conductive covering surface, the second conductive covering surface being disposed around the insulating hole; an insulating hole for an RF center conductor extending through the first conductive covering surface and the second conductive covering surface, the first conductive covering surface and the second conductive covering surface being disposed around the insulating hole; a cavity bounded by the first conductive covering surface and the second conductive covering surface, the cavity being an insulating region; and an RF signal pickup disposed within the cavity.

公开(公告)号：US20250037977A1

公开(公告)日：2025-01-30

申请号：US18359783

申请日：2023-07-26

Applicant: Tokyo Electron Limited

Inventor： Barton Lane

IPC: H01J37/32

Abstract: An apparatus for plasma processing a substrate, where the apparatus includes a plasma processing chamber having a ceiling including a central conductive cover surrounded by a dielectric window, the conductive cover being wider than the substrate; a substrate holder configured to hold the substrate in the chamber, a backside of the substrate being aligned to be inside a hold area of a horizontal top surface of the holder, the hold area being an area under the conductive cover; disposed over the dielectric window, an antenna configured to couple AC electromagnetic (EM) power from an AC EM signal to plasma in the chamber, the AC EM power being absorbed in a heating zone located within a depth directly below the dielectric window; and a magnet configured to generate a DC magnetic field in the chamber, the central flux tube being a magnetic flux tube intercepting the hold area.

公开(公告)号：US20250014865A1

公开(公告)日：2025-01-09

申请号：US18891961

申请日：2024-09-20

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Barton Lane

IPC: H01J37/32

Abstract: An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.

公开(公告)号：US20240038496A1

公开(公告)日：2024-02-01

申请号：US18486220

申请日：2023-10-13

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Merritt Funk ,  Yohei Yamazawa ,  Justin Moses ,  Chelsea DuBose ,  Michael Hummel

IPC: H01J37/32 ,  G01R29/08

CPC classification number: H01J37/32174 ,  G01R29/0878

Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

公开(公告)号：US20210407775A1

公开(公告)日：2021-12-30

申请号：US16913526

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Justin Moses ,  Barton Lane ,  Merritt Funk ,  Chelsea Dubose ,  Yohei Yamazawa ,  Michael Hummel

IPC: H01J37/32 ,  H01J37/24

Abstract: A radio frequency (RF) system includes a RF power source configured to power a load with an RF signal; an RF pipe including an inner conductor and an outer conductor connected to ground coupling the RF power source to the load; and a current sensor aligned to a central axis of the RF pipe carrying the RF signal. A sensor casing is disposed around the RF pipe, where the sensor casing includes a conductive material connected to the outer conductor of the RF pipe. A gallery is disposed within the sensor casing and outside the outer conductor of the RF pipe, where the current sensor is disposed in the gallery. A slit in the outer conductor of the RF pipe exposes the current sensor to a magnetic field due to the current of the RF signal in the inner conductor of the RF pipe.

公开(公告)号：US11037765B2

公开(公告)日：2021-06-15

申请号：US16027123

申请日：2018-07-03

Applicant: Tokyo Electron Limited

Inventor： Barton Lane

IPC: H01J37/32 ,  C23C16/511 ,  H01L21/687 ,  H05H13/00 ,  H05H1/46

Abstract: Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system.

公开(公告)号：US20210013005A1

公开(公告)日：2021-01-14

申请号：US16506202

申请日：2019-07-09

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Peter Ventzek ,  Alok Ranjan ,  Barton Lane ,  Justin Moses ,  Chelsea DuBose

IPC: H01J37/32 ,  C23C16/509 ,  H01L21/67 ,  H01L21/683

Abstract: In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.

公开(公告)号：US20200303164A1

公开(公告)日：2020-09-24

申请号：US16357731

申请日：2019-03-19

Applicant: Tokyo Electron Limited

Inventor： Barton Lane

IPC: H01J37/32 ,  H01L21/67

Abstract: This disclosure relates to a plasma processing system for VHF plasma processing using a transmission antenna designed to enable a resonant VHF standing wave inside a plasma process chamber used to manufacture semiconductor devices. The system includes a transmission element capable of being electromagnetically coupled to incoming power lines connected to a power source. The transmission element, power transmission lines, and power source form a resonant circuit capable of enabling a VHF standing wave on the transmission element. The transmission element is folded back on itself to reduce the footprint of the antenna, such that the transmission element(s) can be located inside the plasma process chamber. The transmission antenna has three portions, with the first being electromagnetically coupled to the power transmission line, the second being coupled to plasma, and the third being a folded portion that reduces the transmission element's footprint.

公开(公告)号：US20200273678A1

公开(公告)日：2020-08-27

申请号：US16405244

申请日：2019-05-07

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Alok Ranjan ,  Barton Lane ,  Peter Ventzek ,  Justin Moses ,  Chelsea DuBose

IPC: H01J37/32 ,  H01L21/67 ,  G05B19/418

Abstract: Methods and systems are disclosed for focus ring thickness measurement and feedback control within process chambers. For disclosed embodiments, in-chamber sensors measure physical parameters associated with focus rings, and these measurements are used to determine thickness for the focus rings. The thickness determinations can be used to detect when a focus ring should be replaced and can also be used as feedback to adjust the position of the focus rings within the chamber. For one embodiment, measurements from ultrasonic sensors are used to make thickness determinations for focus rings. For further embodiments, these ultrasonic sensors are positioned at end portions of focus ring lift pins. Other sensors can also be used such as capacitive sensors, resistive sensors, and/or other desired sensors. Further variations and implementations can also be achieved using in-chambers sensors to facilitate focus ring thickness determinations.

公开(公告)号：US09396900B2

公开(公告)日：2016-07-19

申请号：US13676265

申请日：2012-11-14

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Lee Chen ,  Peter L. G. Ventzek ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC: H01J7/24 ,  H05B31/26 ,  H01J1/00 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J1/00 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4675

Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

Abstract translation: 提供射频（RF）功率耦合系统。 该系统具有被配置为在等离子体处理系统中将RF功率耦合到等离子体的RF电极，多个功率耦合元件被配置为在RF电极上的多个功率耦合位置处电耦合RF功率，以及耦合到多功率耦合的RF功率系统 元件，并且被配置为将RF功率信号耦合到多个功率耦合元件中的每一个。 多个功率耦合元件包括位于RF电极中心的中心元件和位于RF电极中心偏离中心的外围元件。 第一外围RF功率信号与第二外围RF功率信号同相不同。