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公开(公告)号：US10250217B2
公开(公告)日：2019-04-02
申请号：US15790170
申请日：2017-10-23
Applicant: Tokyo Electron Limited
Inventor： Koichi Nagami , Norikazu Yamada
Abstract: Each of a first high frequency power supply and a second high frequency power supply of a plasma processing apparatus is configured to selectively output a continuous wave, a modulated wave and a double-modulated wave. A first average value which determines an impedance at a load side of the first high frequency power supply and a second average value which determines an impedance at a load side of the second high frequency power supply are obtained by using any one of two averaging methods depending on a first high frequency power output from the first high frequency power supply and a second high frequency power output from the second high frequency power supply. An impedance matching of each of a first matching device and a second matching device is performed based on the first average value and the second average value.
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公开(公告)号：US20190057845A1
公开(公告)日：2019-02-21
申请号：US16104512
申请日：2018-08-17
Applicant: Tokyo Electron Limited
Inventor： Koichi Nagami , Kazunobu Fujiwara , Tatsuro Ohshita , Takashi Dokan , Koji Maruyama , Kazuya Nagaseki , Shinji Himori
IPC: H01J37/32
Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.
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公开(公告)号：US10109461B2
公开(公告)日：2018-10-23
申请号：US15642469
申请日：2017-07-06
Applicant: Tokyo Electron Limited , Daihen Corporation
Inventor： Norikazu Yamada , Toshifumi Tachikawa , Koichi Nagami , Satoru Hamaishi , Koji Itadani
Abstract: A plasma processing method for performing a plasma process on a substrate in a plasma processing apparatus is provided. The plasma processing method comprises: a sampling-average-value calculating process of sampling voltage detection signals and electric current detection signals and calculating an average value of these signals during a first monitoring time; a moving-average-value calculating process of calculating a moving average value of the voltage detection signals and the electric current detection signals; a load impedance-measurement-value calculating process of calculating a measurement value of a load impedance with respect to a first high frequency power supply; and a reactance control process of controlling a reactance of a variable reactance element such that the measurement value of the load impedance is equal or approximate to a preset matching point corresponding to impedance on the side of the first high frequency power supply.
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公开(公告)号：US09960016B2
公开(公告)日：2018-05-01
申请号：US15464503
申请日：2017-03-21
Applicant: Tokyo Electron Limited
Inventor： Kumiko Ono , Hiroshi Tsujimoto , Koichi Nagami
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32183 , H01J37/32449 , H01J37/32577
Abstract: In a plasma processing method in which multiple cycles, each of which includes a first stage of generating plasma of a first processing gas containing a first gas and a second stage of generating plasma of a second processing gas containing the first gas and a second gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first gas and the second gas in the second stage is specified from a function or a table. The output of the second gas is begun prior to the start time point of the second stage by a time difference set based on the delay time.
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公开(公告)号：US20170278676A1
公开(公告)日：2017-09-28
申请号：US15464539
申请日：2017-03-21
Applicant: Tokyo Electron Limited
Inventor： Koichi Nagami
IPC: H01J37/32
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32183 , H01J37/32449 , H01J37/32577
Abstract: In a plasma processing method of sequentially performing multiple cycles, each of which includes plural stages which generate plasma of different processing gases within a processing vessel and which are performed in sequence, a setting of a high frequency power and/or a setting of a level of a DC voltage is changed at an appropriate time point after transitioning from a preceding stage to a succeeding stage. The high frequency power is supplied to one of a first electrode and a second electrode of a plasma processing apparatus, and the processing gas output from a gas supply system is changed when transitioning from the preceding stage to the succeeding stage. Thereafter, the setting of the high frequency power and/or the setting of the level of the negative DC voltage is changed at a time point when a parameter reflecting an impedance of the plasma exceeds a threshold value.
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Patent Agency Ranking
公开(公告)号：US09355822B2
公开(公告)日：2016-05-31
申请号：US14368865
申请日：2012-12-13
Applicant: Tokyo Electron Limited , Daihen Corporation
Inventor： Norikazu Yamada , Toshifumi Tachikawa , Koichi Nagami , Tatsuya Ikenari , Daisuke Maehara
IPC: H01J7/24 , H01J37/32 , C23C16/515 , C23C16/509 , H05H1/46
CPC classification number: H01J37/32155 , C23C16/5096 , C23C16/515 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32183 , H05H2001/4682
Abstract: In a capacitively coupled plasma processing apparatus, a susceptor (lower electrode) 16 within a decompression chamber 10 faces an upper electrode 46 serving as a shower head. The susceptor 16 is electrically connected with a first high frequency power supply 36 and a second high frequency power supply 38 via matching devices 40 and 42, respectively. The first high frequency power supply 36 is formed of a linear amplifier type high frequency power supply and outputs a first high frequency power RF1 for plasma generation. The second high frequency power supply 38 is formed of a switching type high frequency power supply and outputs a second high frequency power RF2 for ion attraction. A residual high frequency power removing unit 74 is connected to a high frequency power supply line 45 on a side of the second high frequency power supply 38.
Abstract translation: 在电容耦合等离子体处理装置中，减压室10内的基座（下电极）16面对作为淋浴头的上部电极46。 基座16分别经由匹配装置40和42与第一高频电源36和第二高频电源38电连接。 第一高频电源36由线性放大器型高频电源构成，并输出用于等离子体产生的第一高频功率RF1。 第二高频电源38由开关型高频电源构成，并输出用于离子吸引的第二高频功率RF2。 残余高频电力消除单元74连接到第二高频电源38一侧的高频电源线45。
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公开(公告)号：US20140361690A1
公开(公告)日：2014-12-11
申请号：US14368865
申请日：2012-12-13
Applicant: Tokyo Electron Limited , Daihen Corporation
Inventor： Norikazu Yamada , Toshifumi Tachikawa , Koichi Nagami , Tatsuya Ikenari , Daisuke Maehara
IPC: H01J37/32
CPC classification number: H01J37/32155 , C23C16/5096 , C23C16/515 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32183 , H05H2001/4682
Abstract: In a capacitively coupled plasma processing apparatus, a susceptor (lower electrode) 16 within a decompression chamber 10 faces an upper electrode 46 serving as a shower head. The susceptor 16 is electrically connected with a first high frequency power supply 36 and a second high frequency power supply 38 via matching devices 40 and 42, respectively. The first high frequency power supply 36 is formed of a linear amplifier type high frequency power supply and outputs a first high frequency power RF1 for plasma generation. The second high frequency power supply 38 is formed of a switching type high frequency power supply and outputs a second high frequency power RF2 for ion attraction. A residual high frequency power removing unit 74 is connected to a high frequency power supply line 45 on a side of the second high frequency power supply 38.
Abstract translation: 在电容耦合等离子体处理装置中，减压室10内的基座（下电极）16面对作为淋浴头的上部电极46。 基座16分别经由匹配装置40和42与第一高频电源36和第二高频电源38电连接。 第一高频电源36由线性放大器型高频电源构成，并输出用于等离子体产生的第一高频功率RF1。 第二高频电源38由开关型高频电源构成，并输出用于离子吸引的第二高频功率RF2。 残余高频电力消除单元74连接到第二高频电源38一侧的高频电源线45。
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公开(公告)号：US12136535B2
公开(公告)日：2024-11-05
申请号：US17519596
申请日：2021-11-05
Applicant: Tokyo Electron Limited
Inventor： Tatsuro Ohshita , Koichi Nagami
Abstract: There is a plasma processing apparatus comprising: a chamber; a substrate support provided in the chamber, the substrate support including a bias electrode; a plasma generator configured to generate plasma from a gas in the chamber; and a bias power supply electrically connected to the bias electrode and configured to generate a sequence of a plurality of voltage pulses applied to the bias electrode, wherein each of the plurality of voltage pulses has a leading edge period in which the voltage pulse transitions from a reference voltage level to a pulse voltage level and a trailing edge period in which the voltage pulse transitions from the pulse voltage level to the reference voltage level, and at least one of a time length of the leading edge period and a time length of the trailing edge period is greater than 0 seconds and less than or equal to 0.5 microseconds.
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公开(公告)号：US12033832B2
公开(公告)日：2024-07-09
申请号：US17834948
申请日：2022-06-08
Applicant: Tokyo Electron Limited
Inventor： Shinji Kubota , Kazuya Nagaseki , Shinji Himori , Koichi Nagami
IPC: H01J37/32
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32422
Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.
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公开(公告)号：US11887817B2
公开(公告)日：2024-01-30
申请号：US17232231
申请日：2021-04-16
Applicant: Tokyo Electron Limited
Inventor： Koichi Nagami
IPC: H01J37/32
CPC classification number: H01J37/32422 , H01J37/32137 , H01J37/32266 , H01J37/32715 , H01J2237/334
Abstract: The disclosed plasma processing apparatus is provided with a chamber, a substrate support, and a power source system. The substrate support has an electrode and configured to support a substrate in the chamber. The power source system is electrically connected to the electrode and configured to apply a bias voltage to the electrode to draw ions from a plasma in the chamber into the substrate on the substrate support. The power source system is configured to output a first pulse to the electrode in a first period and output a second pulse to the electrode in a second period after the first period, as the bias voltage. Each of the first pulse and the second pulse is a pulse of a voltage. A voltage level of the first pulse is different from a voltage level of the second pulse.
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