-
公开(公告)号：US07787076B2
公开(公告)日：2010-08-31
申请号：US11989424
申请日：2006-07-21
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Kiwamu Takehisa
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Kiwamu Takehisa
IPC分类号： G02F1/1335
CPC分类号： G02B6/0031 , G02B6/0018 , G02F1/133605 , G02F1/133615
摘要： As a shape on a cross-section vertical to a longitudinal direction (L) of the hot cathode fluorescent lamp (20a (20b)), a light source rear side reflecting plane (62) of a reflector (60) includes a mound portion (623). The mound portion (623) is defined by two recessed inclining planes and protrudes toward a hot cathode fluorescent lamp (20a (20b)).
摘要翻译： 作为垂直于热阴极荧光灯（20a（20b））的纵向（L）的横截面的形状，反射器（60）的光源后侧反射面（62）包括墩部（ 623）。 墩部（623）由两个凹入的倾斜平面限定，朝向热阴极荧光灯（20a（20b））突出。
-
公开(公告)号：US07670454B2
公开(公告)日：2010-03-02
申请号：US11337026
申请日：2006-01-23
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.
摘要翻译： 在微波等离子体处理装置中，通过在微波供给波导与微波天线之间设置锥形表面或具有介质介电常数的构件来减小微波提供波导与微波天线之间的接合单元的微波反射，从而 中等阻抗变化。 因此，提高供电效率，减少放电确保等离子体的稳定形成。
-
公开(公告)号：US07411274B2
公开(公告)日：2008-08-12
申请号：US10543166
申请日：2004-01-29
IPC分类号： H01L29/04
CPC分类号： H01L21/28167 , H01L21/02008 , H01L21/02027 , H01L21/02381 , H01L21/02428 , H01L21/02433 , H01L21/02532 , H01L21/02658 , H01L29/045
摘要： The present invention has been made in order to manufacture a silicon semiconductor substrate used for a semiconductor integrated circuit device, higher in carrier mobility, especially in electron mobility, which is a carrier of an n-type FET, on a {100} plane as a main surface, and provides a silicon semiconductor substrate and a method for manufacturing the same, wherein the conventional RCA cleaning is employed without the use of special cleaning and the surface of the substrate is planarized at an atomic level to thereby decrease the surface roughness thereof without the use of the radical oxidation. The present invention provides a silicon semiconductor substrate comprising: a {110} plane or a plane inclined from a {110} plane as a main surface of the substrate; and steps arranged at an atomic level along a orientation on the main surface.
摘要翻译： 本发明是为了制造用于半导体集成电路器件的硅半导体衬底，在{100}面作为载流子迁移率，尤其是作为n型FET的载流子的电子迁移率中，作为 主表面，并提供硅半导体衬底及其制造方法，其中采用常规的RCA清洗而不使用特殊的清洁，并且基板的表面在原子级平坦化，从而降低其表面粗糙度 而不使用自由基氧化。 本发明提供了一种硅半导体衬底，其包括：{110}面或从{110}面倾斜作为衬底的主表面的平面; 以及沿着主表面沿<110>方向布置在原子水平的台阶。
-
公开(公告)号：US07329609B2
公开(公告)日：2008-02-12
申请号：US10467820
申请日：2002-12-10
IPC分类号： H01L21/302
CPC分类号： H01L21/02247 , C23C8/36 , H01J37/321 , H01J37/32357 , H01L21/02252 , H01L21/3143 , H01L21/318
摘要： In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.
摘要翻译： 在衬底处理装置中，控制电极（131）分离包括待处理衬底和不包括衬底的等离子体形成空间（11B）的处理空间（11C）。 控制电极包括形成在处理容器中并具有用于使等离子体通过的多个孔（131a）的导电构件。 控制电极的表面被氧化铝或导电氮化物覆盖。 在基板处理装置中，将含有He和N 2的气体供给到处理容器中。 在等离子体形成空间中，在原子态氮N *被激发的条件下形成等离子体。 原子态氮N *用于氮化衬底的表面。
-
公开(公告)号：US20070188082A1
公开(公告)日：2007-08-16
申请号：US11675301
申请日：2007-02-15
CPC分类号： G02F1/133385 , G02F1/133603 , H01L23/38 , H01L27/14658 , H01L51/529 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A liquid crystal display including a liquid crystal panel and an organic EL device, which functions as a backlight. The organic EL device includes a Peltier element, which functions as a substrate, and an organic EL element formed on the Peltier element. The organic EL element includes an organic EL layer and first and second electrodes, which sandwich the organic EL layer. The first electrode is shared with a metal layer, which is a heat absorbing electrode of the Peltier element. The second electrode is formed from ITO, which transmits visible light. Light emitted from the organic EL element exits from the second electrode. As a result, the organic EL device is thin and has a superior cooling effect.
摘要翻译： 一种液晶显示器，包括用作背光源的液晶面板和有机EL器件。 有机EL器件包括用作衬底的珀尔帖元件和形成在珀尔帖元件上的有机EL元件。 有机EL元件包括有机EL层和夹着有机EL层的第一和第二电极。 第一电极与作为珀耳帖元件的吸热电极的金属层共享。 第二电极由透明可见光的ITO形成。 从有机EL元件发射的光从第二电极排出。 结果，有机EL器件薄且具有优异的冷却效果。
-
公开(公告)号：US07239084B2
公开(公告)日：2007-07-03
申请号：US10809755
申请日：2004-03-25
IPC分类号： H05B33/02
CPC分类号： G02F1/133385 , G02F1/133603 , H01L23/38 , H01L27/14658 , H01L51/529 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A liquid crystal display including a liquid crystal panel and an organic EL device, which functions as a backlight. The organic EL device includes a Peltier element, which functions as a substrate, and an organic EL element formed on the Peltier element. The organic EL element includes an organic EL layer and first and second electrodes, which sandwich the organic EL layer. The first electrode is shared with a metal layer, which is a heat absorbing electrode of the Peltier element. The second electrode is formed from ITO, which transmits visible light. Light emitted from the organic EL element exits from the second electrode. As a result, the organic EL device is thin and has a superior cooling effect.
摘要翻译： 一种液晶显示器，包括用作背光源的液晶面板和有机EL器件。 有机EL器件包括用作衬底的珀尔帖元件和形成在珀尔帖元件上的有机EL元件。 有机EL元件包括有机EL层和夹着有机EL层的第一和第二电极。 第一电极与作为珀耳帖元件的吸热电极的金属层共享。 第二电极由透明可见光的ITO形成。 从有机EL元件发射的光从第二电极排出。 结果，有机EL器件薄且具有优异的冷却效果。
-
公开(公告)号：US07179746B2
公开(公告)日：2007-02-20
申请号：US10725063
申请日：2003-12-02
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L21/3185 , H01L21/30604 , H01L21/31654 , H01L21/318 , H01L29/6659
摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.
摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面， 或低OH密度气氛，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。
-
38.发明授权Microwave plasma processing apparatus, plasma ignition method, plasma forming method, and plasma processing method 失效微波等离子体处理装置，等离子体点火方法，等离子体成形方法和等离子体处理方法公开(公告)号：US07141756B2
公开(公告)日：2006-11-28
申请号：US10473062
申请日：2002-03-28
CPC分类号： H01J37/32192 , C23C16/517 , H01J37/32009 , H01J37/32339
摘要： A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.
摘要翻译： 公开了一种微波等离子体处理装置，其能够在等离子体处理的压力下实现快速容易的等离子体点火。在微波等离子体处理装置中，提供等离子体点火促进单元以促进由微波引起的等离子体点火。 等离子体点火促进单元包括发射真空紫外线的氘灯和允许真空紫外线穿透和照射等离子体激发空间的透射窗。 传输窗是凸透镜，聚焦真空紫外线以增强等离子体激发气体的离子化。 通过这样的结构，能够容易且快速地引起等离子体点火。
-
公开(公告)号：US07097735B2
公开(公告)日：2006-08-29
申请号：US10296614
申请日：2002-03-28
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/511 , C30B25/105 , H01J37/32192
摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot antenna to make an intimate contact with a cover plate that forms a part of an outer wall of the processing chamber and makes an intimate contact with the shower plate.
摘要翻译： 在使用径向线槽天线的微波等离子体处理装置中，优化喷淋板的冷却效率，同时通过使径向线槽天线的辐射面进行紧密接触，微波激发的效率最优化 具有形成处理室的外壁的一部分并与淋浴板紧密接触的盖板。
-
40.发明申请Circuit board, electronic device employing circuit board, and mehtod of producing circuit board 审中-公开电路板，采用电路板的电子设备，以及电路板生产线公开(公告)号：US20060158865A1
公开(公告)日：2006-07-20
申请号：US10525329
申请日：2003-08-25
CPC分类号： H05K1/024 , H05K3/4676 , H05K3/4688
摘要： A circuit board (100) having an insulator layer and a conductor (104) buried in the insulator layer, wherein the insulator layer has a first insulator (101) satisfying a relation μr≧εr, assuming εr is the dielectric constant and μr is the relative permeability, and the conductor is substantially surrounded by the first insulator.
摘要翻译： 一种电路板（100），具有绝缘体层和埋在所述绝缘体层中的导体（104），其中所述绝缘体层具有第一绝缘体（101），所述第一绝缘体（101）满足关系式，其中，ε=介电常数， 相对导磁率和导体基本上被第一绝缘体包围。
-
-
-
-
-
-
-
-
-
搜索结果
900 条记录 (耗时 0.036 秒)
