公开(公告)号：US4772925A

公开(公告)日：1988-09-20

申请号：US935171

申请日：1986-11-26

申请人： Tadashi Fukuzawa ,  Ken Yamaguchi ,  Susumu Takahashi ,  Hisao Nakashima ,  Michiharu Nakamura

发明人： Tadashi Fukuzawa ,  Ken Yamaguchi ,  Susumu Takahashi ,  Hisao Nakashima ,  Michiharu Nakamura

IPC分类号： H01L29/80 ,  H01L21/331 ,  H01L21/338 ,  H01L29/10 ,  H01L29/73 ,  H01L29/778 ,  H01L29/812 ,  H01L27/12 ,  H01L29/161 ,  H01L29/205

CPC分类号： H01L29/7783 ,  H01L29/1075

摘要： The semiconductor device of this invention consists at least of a laminate of a semi-insulating or p-type first semiconductor layer having a forbidden band width E.sub.g1, an undoped or p.sup.- -type second semiconductor layer having a forbidden band width E.sub.g2 and an n-type third semiconductor layer having forbidden band width E.sub.g3. The laminate is deposited on a predetermined semiconductor substrate and the forbidden band width has the relation E.sub.g2

摘要翻译： 本发明的半导体器件至少包括具有禁带宽度Eg1的半绝缘或p型第一半导体层的层压体，具有禁带宽度Eg2的未掺杂或p型第二半导体层，以及n 具有禁带宽度Eg3的第三半导体层。 层压体沉积在预定的半导体衬底上，禁带宽度具有关系Eg2

公开(公告)号：US4430741A

公开(公告)日：1984-02-07

申请号：US225399

申请日：1981-01-15

申请人： Tadashi Fukuzawa ,  Michiharu Nakamura ,  Susumu Takahashi

发明人： Tadashi Fukuzawa ,  Michiharu Nakamura ,  Susumu Takahashi

IPC分类号： H01S5/00 ,  H01L27/15 ,  H01S5/026 ,  H01S5/06 ,  H01S5/062 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/06203 ,  H01L27/15 ,  H01S5/227 ,  H01S5/0622 ,  H01S5/2275

摘要： Disclosed is a semiconductor laser device comprising a semiconductor assembly which serves to effect laser oscillation and in which first, second and third semiconductor layers are successively stacked on a predetermined semiconductor body, at least the first and third semiconductor layers being small in the refractive index relative to the second semiconductor layer and great in the forbidden band gap relative thereto and having conductivity types opposite to each other, and means to spread depletion regions within at least a part of a current path for effecting the laser oscillation and in a manner to intersect with the current path. A small-sized semiconductor laser device capable of fast modulation can be realized.

摘要翻译： 公开了一种半导体激光器件，其包括用于实现激光振荡的半导体组件，并且其中第一，第二和第三半导体层被连续堆叠在预定半导体本体上，至少第一和第三半导体层的折射率相对较小 并且相对于第二半导体层具有大的禁带宽度，并且具有彼此相反的导电类型，以及在电流路径的至少一部分内扩散耗尽区以实现激光振荡并以与 当前路径。 能够实现能够进行快速调制的小型半导体激光装置。

公开(公告)号：US4361887A

公开(公告)日：1982-11-30

申请号：US125779

申请日：1980-02-29

申请人： Michiharu Nakamura ,  Motohisa Hirao ,  Shigeo Yamashita ,  Tadashi Fukuzawa ,  Junichi Umeda

发明人： Michiharu Nakamura ,  Motohisa Hirao ,  Shigeo Yamashita ,  Tadashi Fukuzawa ,  Junichi Umeda

IPC分类号： H01L29/80 ,  H01L21/338 ,  H01L27/095 ,  H01L27/15 ,  H01L29/812 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S3/19

CPC分类号： H01S5/0265

摘要： A semiconductor laser light emitting element comprises a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a means for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A means is formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injection means is short-circuited with the first electrode of the field transistor section and a means is formed on the substrate for receiving the current injected from the current injecting means.

摘要翻译： 半导体激光发光元件包括半导体衬底，半导体层的层叠区域，其至少形成在衬底上并具有限定在其中的p-n结的第一，第二和第三半导体层。 第一和第三半导体层具有比第二半导体层更小的折射率和更大的禁带宽度，并且与导电类型相反。 在基板上设置有具有第一和第二电极的场效应晶体管部分和设置在第一和第二电极之间的栅电极，用作用于在p-n结的长度方向上发光的光谐振器的装置。 在层叠区域的一个表面上形成用于将电流注入到第三半导体层中的装置，电流注入装置与场晶体管部分的第一电极短路，并且在基板上形成用于接收注入电流的装置 从目前的注射手段。

公开(公告)号：US07421858B2

公开(公告)日：2008-09-09

申请号：US11679460

申请日：2007-02-27

申请人： Tadashi Fukuzawa ,  Masaki Hasegawa

发明人： Tadashi Fukuzawa ,  Masaki Hasegawa

IPC分类号： C03B37/032 ,  C03B37/022 ,  C03B37/01 ,  G02B6/12 ,  G02B6/26 ,  G02B6/42 ,  G02B6/10

CPC分类号： G02B6/30 ,  G02B6/125 ,  G02B6/4214 ,  G02B6/43 ,  G02B2006/12104 ,  H05K1/0274 ,  H05K1/144

摘要： Provided is an optical transmission substrate including: a first substrate; an optical waveguide which has clad covering a core and a periphery of the core and extends on an upper surface of the first substrate; a second substrate provided parallel to the first substrate so that a lower surface thereof contacts an upper surface of the optical waveguide; a reflection surface which is provided on a cross section of the core at an end of the optical waveguide and reflects light, which travels through the core of the optical waveguide, toward the second substrate; and a light guide which is provided in the second substrate and guides the light, which is reflected toward the second substrate, toward an upper surface of the second substrate from a position closer to the core than an upper surface of the clad.

摘要翻译： 提供一种光传输基板，包括：第一基板; 光波导，其具有包覆芯和芯的周边并且在第一基板的上表面上延伸的光导体; 第二基板，其平行于第一基板设置，使得其下表面接触光波导的上表面; 在所述光波导的端部设置在所述芯的截面上并反射穿过所述光波导的芯的光朝向所述第二基板的反射面; 以及导光体，其设置在所述第二基板中，并且从所述包层的上表面的距离更靠近所述芯的位置将从所述第二基板反射的光导向所述第二基板的上表面。

公开(公告)号：US07373044B2

公开(公告)日：2008-05-13

申请号：US11151750

申请日：2005-06-13

申请人： Kazuo Sekiya ,  Tadashi Fukuzawa

发明人： Kazuo Sekiya ,  Tadashi Fukuzawa

IPC分类号： G02B6/34 ,  G02B6/26 ,  G02B6/42 ,  G02B5/04 ,  H04B10/06

CPC分类号： G02B6/4209 ,  G02B6/32 ,  G02B6/3885 ,  G02B6/4214 ,  G02B6/4249 ,  G02B6/4292 ,  G02B6/43

摘要： An optical link module of the present invention for connecting light beams by deflection and including light-emitting devices arranged in a planar manner; an optical fiber bundle that is an optical waveguide for receiving the light beams from the light-emitting devices, and an optical turn which includes a plurality of aspherical lenses which are disposed between the light-emitting devices and the optical fiber bundle and are formed while corresponding to the number of the light-emitting devices and the number of optical fibers.

摘要翻译： 本发明的用于通过偏转连接光束并包括以平面方式布置的发光器件的光连杆模块; 作为用于接收来自发光装置的光束的光波导的光纤束，以及包括设置在发光元件与光纤束之间的多个非球面透镜的光学转向，并且形成为同时 对应于发光装置的数量和光纤的数量。

公开(公告)号：US06295106B1

公开(公告)日：2001-09-25

申请号：US09482151

申请日：2000-01-12

申请人： Tadashi Fukuzawa ,  Sayuri Kohara ,  Victor Yee Way Lee ,  Robert D. Miller ,  John Campbell Scott ,  Sally A. Swanson

发明人： Tadashi Fukuzawa ,  Sayuri Kohara ,  Victor Yee Way Lee ,  Robert D. Miller ,  John Campbell Scott ,  Sally A. Swanson

IPC分类号： G02F11335

CPC分类号： G02F1/133617 ,  C09B69/101 ,  C09B69/102 ,  G02F1/133603 ,  G02F1/13362 ,  G02F1/133621 ,  G02F2001/133614

摘要： Novel liquid crystal display (LCD) structures for full-color liquid crystal displays using photoluminescent (PL) fibers. The new architectures simplify the LCD fabrication process by replacing complicated, time consuming photolithography steps for color filter fabrication to a low-cost, high-throughput fiber spinning technology. The new LCD architecture implementing the approach has a higher power efficiency than conventional LCDs. Three structures of LCD devices utilizing photoluminescent (PL) fiber arrays includes: a first structure having PL fiber arrays situated behind the LC shutter (relative to viewers); a second structure having PL fiber arrays situated on top of the LC shutter; and a third structure where the PL fiber arrays are located outside the LC cell. In one of these structures, the fibers not only photoluminesce, but also polarize incident light thus reducing LCD fabrication cost.

摘要翻译： 使用光致发光（PL）光纤的全色液晶显示器的新型液晶显示器（LCD）结构。 新架构简化了LCD制造工艺，将复杂，耗时的彩色滤光片制作步骤替代为低成本，高通量的纤维纺丝技术。 实现该方法的新型LCD架构具有比传统LCD更高的功率效率。 利用光致发光（PL）光纤阵列的三种LCD装置结构包括：具有位于LC快门（相对于观看者）后面的PL光纤阵列的第一结构; 具有位于所述LC快门顶部的PL光纤阵列的第二结构; 以及其中PL光纤阵列位于LC单元外部的第三结构。 在这些结构之一中，光纤不仅光致发光，而且使入射光偏振，从而降低LCD制造成本。

公开(公告)号：US5638207A

公开(公告)日：1997-06-10

申请号：US516468

申请日：1995-08-17

申请人： Tadashi Fukuzawa ,  Teiji Hisano ,  Yasuji Ozawa ,  Yasuyuki Takahashi ,  Hiroshi Watabe

发明人： Tadashi Fukuzawa ,  Teiji Hisano ,  Yasuji Ozawa ,  Yasuyuki Takahashi ,  Hiroshi Watabe

IPC分类号： G11B5/455 ,  G01B11/14 ,  G02B27/00 ,  G02B27/28 ,  G11B5/60 ,  G11B33/10 ,  G02B21/20 ,  G01J4/00 ,  G02B5/30 ,  G11B13/04

CPC分类号： G11B5/6005 ,  G02B27/0018 ,  G02B27/28 ,  G11B33/10

摘要： An optical system is provided in which flare is prevented and, when the light reflected from a reflection component is modulated by a photoelastic phenomenon, the effect of the modulation on the measurement of the intensity of the reflected light can be eliminated, and, further, a flying height tester for a magnetic head is provided using such optical system. A multilambda plate is provided in the flare-prevention optical system for allowing the light reaching a reflection component and the light reflected from the reflection component to pass, and for allowing the phase difference between the ordinary ray and the extraordinary ray to vary by 2.pi. or more depending on the wavelength of light. Since the light passed through the multilambda plate only varies in the peak position and the peak height varies little even if the light has experienced modulation, no error occurs in the spectrum intensity of the light. A depolarizer may be substituted for the multilambda plate.

摘要翻译： 提供了一种光学系统，其中防止闪光，并且当通过光弹现象调制从反射分量反射的光时，可以消除调制对反射光强度的测量的影响，此外， 使用这种光学系统提供用于磁头的飞行高度测试仪。 在防火光学系统中设置有多射极板，用于允许光到达反射分量，并且从反射分量反射的光通过，并且为了允许普通光线和非凡光线之间的相位差变化2π 或更多取决于光的波长。 由于通过多谱板的光仅在峰值位置变化，并且峰值高度变化很小，即使光经过调制，光的光谱强度也不会发生错误。 去极化器可以代替多极板。

公开(公告)号：US5281543A

公开(公告)日：1994-01-25

申请号：US912939

申请日：1992-07-13

申请人： Tadashi Fukuzawa ,  Hiro Munekata

发明人： Tadashi Fukuzawa ,  Hiro Munekata

IPC分类号： H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812

CPC分类号： B82Y10/00 ,  H01L21/182 ,  H01L21/2654 ,  H01L25/0657 ,  H01L29/66469 ,  H01L29/66924 ,  H01L2225/06541 ,  H01L2924/0002 ,  Y10S438/962

摘要： Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electronic device with high speed and low power consumption, using a combination of low-temperature-growth molecular beam epitaxy (LTG-MBE) and focused ion beam (FIB) implantation. The compound semiconductor (GaAs) epitaxial layers, which are made by LTG-MBE, are used as targets of Ga FIB implantation to make Ga wire or dot arrays. Precipitation of arsenic microcrystals, which are initially embedded in a single crystal GaAs layer and act as Schottky barriers, are typically observed in an LTG GaAs layer. A thermal annealing process, after implantation, changes the arsenic microcrystals to GaAs crystals if the arsenic microcrystals are in the region in which the Ga ions are implanted. A wire-like shape free of As microcrystals then acts as a quantum wire for electrons or holes whereas a dot-like shape free of As microcrystals acts as a quantum dot. The co-existence of Ga ions and dopant ions, which provides conductivity type carriers opposite to the conductivity type of the majority carriers of a channel region of an FET, provides the fabrication of very narrow junction gate region for any FET.

摘要翻译： 公开了适用于制造高度集成的量子线阵列，单晶化合物半导体中的量子点阵列和小于0.1微米栅极长度的FET的新方法。 这使得可以使用低温生长分子束外延（LTG-MBE）和聚焦离子束（FIB）植入的组合来构建具有高速度和低功耗的高性能电子器件。 将由LTG-MBE制成的化合物半导体（GaAs）外延层用作Ga FIB注入的靶，以制造Ga线或点阵列。 通常在LTG GaAs层中观察到最初嵌入单晶GaAs层中并作为肖特基势垒的砷微晶的析出。 如果砷微晶处于植入Ga离子的区域，则在植入后的热退火工艺将砷微晶变为GaAs晶体。 没有As微晶的线状形状作为电子或空穴的量子线，而没有As微晶的点状形状作为量子点。 提供与FET的沟道区域的多数载流子的导电类型相反的导电型载流子的Ga离子和掺杂离子的共存提供了用于任何FET的非常窄的结栅极区域的制造。

公开(公告)号：US5091980A

公开(公告)日：1992-02-25

申请号：US580599

申请日：1990-09-11

申请人： Kensuke Ogawa ,  Toshio Katsuyama ,  Tadashi Fukuzawa

发明人： Kensuke Ogawa ,  Toshio Katsuyama ,  Tadashi Fukuzawa

IPC分类号： G02F1/015 ,  G02F1/017 ,  G02F1/21 ,  G02F1/225 ,  G02F1/35 ,  G02F3/00 ,  H01L29/66

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  G02F1/01708 ,  G02F1/225 ,  G02F1/3517 ,  H01L29/66977 ,  G02F1/01716 ,  G02F2001/212 ,  Y10S359/90

摘要： A device structure is provided for optical modulation using a quantum interference effect in an excited state of electron-systems. The optical modulation is performed by causing the effect of modulation on the excited state of electron-systems represented by excitons to be executed on light via the state in which the light and the excited state of electron-systems represented by the excitonic polaritons are coupled.

公开(公告)号：US5001536A

公开(公告)日：1991-03-19

申请号：US298764

申请日：1989-01-17

申请人： Tadashi Fukuzawa ,  Michiharu Nakamura ,  Eizaburo Yamada

发明人： Tadashi Fukuzawa ,  Michiharu Nakamura ,  Eizaburo Yamada

IPC分类号： H01L27/06 ,  H01L29/267 ,  H01L29/51 ,  H01L29/778

CPC分类号： H01L29/517 ,  H01L27/0605 ,  H01L29/267 ,  H01L29/7783 ,  H01L29/7787

摘要： In a semiconductor device having, at least, a first semiconductor layer which contains substantially no impurity, a second semiconductor layer which has a band gap greater than that of the first semiconductor layer and which contains an impurity, an interface between the first and second semiconductor layers forming a heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers developing at the heterojunction interface; a semiconductor device characterized in that the first semiconductor layer is a Ge layer, while the second semiconductor layer is a group III-V compound semiconductor layer.

摘要翻译： 在具有至少包含基本上不含杂质的第一半导体层的半导体器件中，具有大于第一半导体层的带隙的第二半导体层并且含有杂质的第二半导体层在第一和第二半导体之间的界面 形成异质结的层，与第一半导体层电子连接的至少一对电极，以及控制在异质结界面处显影的载体的装置; 其特征在于，所述第一半导体层为Ge层，所述第二半导体层为III-V族化合物半导体层。