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    OPTICAL TRANSMISSION SUBSTRATE, METHOD FOR MANUFACTURING OPTICAL TRANSMISSION SUBSTRATE AND OPTOELECTRONIC INTEGRATED CIRCUIT
    4.
    发明申请
    OPTICAL TRANSMISSION SUBSTRATE, METHOD FOR MANUFACTURING OPTICAL TRANSMISSION SUBSTRATE AND OPTOELECTRONIC INTEGRATED CIRCUIT 有权
    光传输基板，制造光传输基板和光电集成电路的方法

    公开(公告)号：US20070137254A1

    公开(公告)日：2007-06-21

    申请号：US11679460

    申请日：2007-02-27

    申请人： Tadashi Fukuzawa ,  Masaki Hasegawa

    发明人： Tadashi Fukuzawa ,  Masaki Hasegawa

    IPC分类号： C03B37/022

    CPC分类号： G02B6/30 ,  G02B6/125 ,  G02B6/4214 ,  G02B6/43 ,  G02B2006/12104 ,  H05K1/0274 ,  H05K1/144

    摘要： Provided is an optical transmission substrate including: a first substrate; an optical waveguide which has clad covering a core and a periphery of the core and extends on an upper surface of the first substrate; a second substrate provided parallel to the first substrate so that a lower surface thereof contacts an upper surface of the optical waveguide; a reflection surface which is provided on a cross section of the core at an end of the optical waveguide and reflects light, which travels through the core of the optical waveguide, toward the second substrate; and a light guide which is provided in the second substrate and guides the light, which is reflected toward the second substrate, toward an upper surface of the second substrate from a position closer to the core than an upper surface of the clad.

    摘要翻译： 提供一种光传输基板，包括：第一基板; 光波导，其具有包覆芯和芯的周边并且在第一基板的上表面上延伸的光导体; 第二基板，其平行于第一基板设置，使得其下表面接触光波导的上表面; 在所述光波导的端部设置在所述芯的截面上并反射穿过所述光波导的芯的光朝向所述第二基板的反射面; 以及导光体，其设置在所述第二基板中，并且从所述包层的上表面的距离更靠近所述芯的位置将从所述第二基板反射的光导向所述第二基板的上表面。

    Semiconductor laser having a multiple quantum well structure doped with impurities
    6.
    发明授权
    Semiconductor laser having a multiple quantum well structure doped with impurities 失效
    具有掺杂有杂质的多量子阱结构的半导体激光器

    公开(公告)号：US4881235A

    公开(公告)日：1989-11-14

    申请号：US41410

    申请日：1987-04-23

    申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    IPC分类号： H01S5/227 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/309 ,  H01S5/3407 ,  Y10S372/704

    摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.

    摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。 理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。

    Radiographic phosphor screen
    8.
    发明授权
    Radiographic phosphor screen 失效
    射线荧光屏

    公开(公告)号：US4041319A

    公开(公告)日：1977-08-09

    申请号：US670833

    申请日：1976-03-26

    申请人： Tadashi Fukuzawa ,  Teruki Suzuki ,  Shigeru Sato

    发明人： Tadashi Fukuzawa ,  Teruki Suzuki ,  Shigeru Sato

    IPC分类号： G01T1/20 ,  C09K11/08 ,  C09K11/77 ,  C09K11/83 ,  G21K4/00 ,  H01J29/38 ,  G01J1/58

    CPC分类号： C09K11/7708 ,  C09K11/7709 ,  G21K4/00

    摘要： A radiographic phosphor screen to be used as an intensifying screen, a direct viewing fluorescent screen, an input screen of an image intensifier tube for radiography and the like, which comprises a substrate and, supported thereon, a phosphor represented by the following general formula:M(P.sub.x, V.sub.1.sub.-x)0.sub.4wherein M stands for at least one element selected from the group consisting of yttrium (Y), lanthanum (La), gadolium (Gd) and lutetium (Lu) and x is a number of from 0.7 to 0.99,Or a phosphate formed by activating said phosphor with 0.01 to 0.5 mole % of thulium (Tm).

    摘要翻译： 用作增强屏幕的放射线照相荧光屏，直视荧光屏，用于放射线照相的图像增强管的输入屏幕等，其包括基底，并且在其上支撑由以下通式表示的荧光体：