摘要:
A device structure is provided for optical modulation using a quantum interference effect in an excited state of electron-systems. The optical modulation is performed by causing the effect of modulation on the excited state of electron-systems represented by excitons to be executed on light via the state in which the light and the excited state of electron-systems represented by the excitonic polaritons are coupled.
摘要:
A device structure is provided for optical modulation using a quantum interference effect in an excited state of electron-systems. The optical modulation is performed by causing the effect of modulation on the excited state of electron-systems represented by excitons to be executed on light via the state in which the light and the excited state of electron-systems represented by the excitonic polaritons are coupled.
摘要:
An optical device utilizes a polariton substance and utilizes the absorption wavelength band of excitonic polaritons. Further, an external stimulus such as electric field, magnetic field, stress, current or electromagnetic wave (light) is continuously or intermittently given to the polariton substance, thereby to modulate light which enters the optical device. Thus, a modulating operation of ultra-high speed is possible.
摘要:
A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.
摘要:
A semiconductor light-emitting device includes a plurality of semiconductor rods, each of which has a pn junction. The semiconductor rods are formed on a semiconductor substrate such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from the semiconductor rod. With such devices, various novel optical devices such as a micro-cavity laser of which the threshold current is extremely small and a coherent light-emitting device having no threshold value can be realized.
摘要:
The present invention provides an ultra-mini and low cost refractive index measuring device applicable to biochemical measurements of an extremely minute amount of a sample. The refractive index measuring device uses a photonic crystal without any requirement of an external spectrograph or the like. The micro sensor device according to the present invention includes a light source emitting light with a single wavelength, a microcavity in which a resonant wavelength varies depending on a position thereof. A refractive index of a material to be measured is measured based on positional information by detecting a transmitting position of light changing in response to a change of a refractive index of the measured material. The micro sensor device according to the present invention enables measurement of a refractive index of a material to be measured without using a large-scale spectrograph.
摘要:
In a semiconductor device wherein a signal transmission in a semiconductor integrated electronic circuit is carried out partly or entirely by means of a light, the signal transmission on the light is carried out with multi-wavelength, waveguides or a photoelectric converter and an electronic integrated device are provided on a circuit board having an optical waveguide, thus providing a high performance and practical technique.
摘要:
A selenium-base chalcogenide glass for use as optical fibers suitable for transmitting with low loss infrared rays, particularly that of 10.6 .mu.m in wavelength, is provided. The infrared optical fibers with low transmission loss, which is suitable for practical use, are obtained by incorporating 2 to 100 ppm of at least one of Al Ga, and In into a selenium-base chalcogenide glass, thereby to reduce the absorption due to the vibration of Ge--O bond formed by the contamination with oxygen. The infrared optical fibers made of such a glass material show a transmission loss of 3-4 dB/m which is less than 1/2.5 of the loss (10 dB/m) of a reference glass.
摘要:
An electric-field measuring apparatus utilizing electrooptic effect for measuring the intensity of an electric DC field includes a material exhibiting both electrooptic effect and photoelectric effect or both a material exhibiting the electrooptic effect and a material exhibiting the photoelectric effect which material or materials are irradiated with a continuous light ray of a wavelength capable of inducing the electrooptic effect and an intermittently interrupted light ray of a wavelength capable of inducing the photoelectric effect.
摘要:
In a measuring method and a measuring apparatus which are suited for observing a dynamic physical phenomenon particularly in a microdevice, a signal for generating a physical phenomenon in a specimen is inputted to the specimen, and a signal which is caused by this dynamic physical phenomenon is detected by a probe which is close to or in contact with the specimen surface in correspondence with a signal input to the specimen on the basis of the specific time. The measuring apparatus has a scanning probe microscope with a probe (tip) which is close to or in contact with the specimen surface, a pulse voltage application control unit for applying respective pulse voltages to the specimen and probe, and a signal measuring unit for measuring a signal from the specimen detected by the probe. The measuring apparatus causes a dynamic physical phenomenon in the specimen by applying the pulse voltage to the specimen, applies a bias voltage between the probe and specimen by applying the pulse voltage to the probe, and detects the signal caused by the dynamic physical phenomenon in the specimen. Pulse voltage application to the probe is executed by the pulse voltage application control unit in correspondence with pulse voltage application to the specimen on the basis of the specific time. A dynamic physical phenomenon in a microarea of a specimen which is caused by the particle property or wave property of electrons can thus be observed.