公开(公告)号：US07820244B2

公开(公告)日：2010-10-26

申请号：US11589716

申请日：2006-10-31

申请人： Jung-Hun Seo ,  Jin-Gi Hong ,  Yun-Ho Choi ,  Hyun-Chul Kwun ,  Eun-Taeck Lee ,  Jin-Ho Kim

发明人： Jung-Hun Seo ,  Jin-Gi Hong ,  Yun-Ho Choi ,  Hyun-Chul Kwun ,  Eun-Taeck Lee ,  Jin-Ho Kim

IPC分类号： C23C16/00

CPC分类号： H01L21/76841 ,  C23C16/4405 ,  C23C16/45508 ,  H01L21/28556

摘要： In a method of forming a layer, a titanium layer and a titanium nitride layer may be successively formed on a first wafer. By-products adhered to the inside of a chamber during the formation of the titanium nitride layer may be removed from the chamber. Processes of forming the titanium layer, forming the titanium nitride layer, and removing the by-products may be repeated relative to a second wafer.

摘要翻译： 在形成层的方法中，可以在第一晶片上依次形成钛层和氮化钛层。 在形成氮化钛层期间附着在室内部的副产物可以从室中除去。 可以相对于第二晶片重复形成钛层，形成氮化钛层和除去副产物的工艺。

公开(公告)号：US20100226579A1

公开(公告)日：2010-09-09

申请号：US12718511

申请日：2010-03-05

申请人： Hee-Chan Park ,  Sung-Dae Cho ,  Min-Kyu Park ,  Jin-Ho Kim ,  Ji-Hye Kim ,  Yun-Je Oh

发明人： Hee-Chan Park ,  Sung-Dae Cho ,  Min-Kyu Park ,  Jin-Ho Kim ,  Ji-Hye Kim ,  Yun-Je Oh

IPC分类号： G06K9/48

CPC分类号： G06T7/13 ,  G06T2207/20021

摘要： An image processing method and apparatus capable of easily detecting an edge of an object from an input image, in which the edge is detected using one step, without a pre-processing step, and a complicated trigonometric function is not used for gradient detection. The image processing method includes setting a window within an input image, analyzing the window to determine directions of edges of objects within the image included in the window, detecting edge information including the edge directions, and processing and outputting the window using the edge information.

摘要翻译： 一种图像处理方法和装置，其不需要用于梯度检测，能够容易地从输入图像中检测出物体的边缘，其中使用一个步骤检测边缘，而无需预处理步骤，并且复杂的三角函数不用于梯度检测。 图像处理方法包括设置输入图像内的窗口，分析窗口以确定包括在窗口中的图像内的对象的边缘的方向，检测包括边缘方向的边缘信息，以及使用边缘信息来处理和输出窗口。

公开(公告)号：US20100202355A1

公开(公告)日：2010-08-12

申请号：US12702751

申请日：2010-02-09

申请人： Jin-Hyoung Kim ,  Sun-Gi Kim ,  Dae-Hyung Kwon ,  Choong-Seon Hong ,  Jin-Ho Kim ,  Byung-Goo Choi

发明人： Jin-Hyoung Kim ,  Sun-Gi Kim ,  Dae-Hyung Kwon ,  Choong-Seon Hong ,  Jin-Ho Kim ,  Byung-Goo Choi

IPC分类号： H04W8/02

CPC分类号： H04W36/385 ,  Y02D70/144 ,  Y02D70/22

摘要： A method is provided for registering a mobile router in an Internet Protocol version 6 over Low power Wireless Personal Area Network (6LoWPAN) network. The mobile router detects movement into a wireless network through the reception of a beacon message, and sends a Router Solicitation (RS) message requesting registration in the wireless network to a gateway. The gateway acquires an address of the mobile router from the RS message, stores the acquired address, assigns a new address to be used in the wireless network to the mobile router, and sends a Router Advertisement (RA) message with assigned address information and gateway address information, to the mobile router. The mobile router acquires the assigned address information and the gateway address information from the RA message.

摘要翻译： 提供了一种用于通过低功率无线个人区域网（6LoWPAN）网络在互联网协议版本6中注册移动路由器的方法。 移动路由器通过接收信标消息来检测到无线网络的移动，并且向无线网络发送请求在无线网络中注册的路由器请求（RS）消息。 网关从RS消息中获取移动路由器的地址，存储获取的地址，将无线网络中要使用的新地址分配给移动路由器，并发送具有分配的地址信息和网关的路由器通告（RA）消息 地址信息，到移动路由器。 移动路由器从RA消息获取分配的地址信息和网关地址信息。

公开(公告)号：US07615859B2

公开(公告)日：2009-11-10

申请号：US12076044

申请日：2008-03-13

申请人： Jin-Ho Kim ,  Sung-Hwan Yoon

发明人： Jin-Ho Kim ,  Sung-Hwan Yoon

IPC分类号： H01L23/495 ,  H01L21/784

CPC分类号： H01L23/4951 ,  H01L23/3107 ,  H01L23/49551 ,  H01L24/48 ,  H01L25/105 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/07802 ,  Y10T428/24207 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided is a thin semiconductor package comprising a semiconductor chip and a lead frame, the lead frame including a paddle portion configured for mounting the semiconductor chip in a manner that exposes bonding pads within an aperture formed in a center portion of the lead frame and a peripheral terminal pad portion for establishing external contacts. A plurality of bonding wires are used to establish electrical connection between a lower surface of the paddle part and corresponding bonding pads with intermediate leads providing connection to the terminal pad portions. The semiconductor chip, lead frame and bonding wires may then be encapsulated to form a thin semiconductor package having a thickness substantially equal to that of the terminal pad portions. The thin semiconductor packages may, in turn, be used to form multi-chip stack packages using known good semiconductor chips to form a high-density compound semiconductor packages.

摘要翻译： 提供了一种薄半导体封装，其包括半导体芯片和引线框架，该引线框架包括：配置用于以形成在引线框的中心部分中的孔内露出焊盘的方式安装半导体芯片的桨形部分， 端子焊盘部分，用于建立外部触点。 多个接合线用于在桨形部分的下表面和相应的接合焊盘之间建立电连接，中间引线提供与端子焊盘部分的连接。 然后可以将半导体芯片，引线框和接合线封装成具有基本上等于端子焊盘部分的厚度的薄的半导体封装。 薄的半导体封装又可以用于使用已知的良好半导体芯片形成多芯片堆叠封装以形成高密度化合物半导体封装。

公开(公告)号：US20090194736A1

公开(公告)日：2009-08-06

申请号：US11396910

申请日：2006-04-04

申请人： Jai-Young Lee ,  Jeung-Ku Kang ,  Hyun-Seok Kim ,  Kyu-Sung Han ,  Min-Sang Song ,  Ho Lee ,  Jin-Ho Kim

发明人： Jai-Young Lee ,  Jeung-Ku Kang ,  Hyun-Seok Kim ,  Kyu-Sung Han ,  Min-Sang Song ,  Ho Lee ,  Jin-Ho Kim

IPC分类号： C09K3/00 ,  B01J13/02

CPC分类号： H01M8/04216 ,  B01J20/0225 ,  B01J20/20 ,  B01J20/205 ,  B01J20/3204 ,  B01J20/3236 ,  B01J20/3295 ,  B82Y30/00 ,  B82Y40/00 ,  C01B3/0021 ,  C01B32/162 ,  C01B32/168 ,  F17C11/005 ,  H01M8/0612 ,  Y02E60/321 ,  Y02E60/325

摘要： Disclosed herein is a method of doping nanosized nickel (Ni) on the surface of carbon nanotubes to improve the hydrogen storage capacity of the carbon nanotubes. The method comprises: sonicating carbon nanotube samples produced by vapor deposition, in sulfuric acid solution, followed by filtration to remove a metal catalyst from the carbon nanotube samples; and doping the carbon nanotube samples in liquid phase solution, followed by drying and reduction, so as to dope nanosized nickel on the surface of the carbon nanotubes.

摘要翻译： 本文公开了在纳米碳管表面掺杂纳米尺寸镍（Ni）以提高碳纳米管的储氢能力的方法。 该方法包括：在硫酸溶液中超声处理气相沉积产生的碳纳米管样品，然后过滤以从碳纳米管样品中除去金属催化剂; 并将碳纳米管样品掺杂在液相中，然后进行干燥和还原，从而将纳米尺寸的镍掺杂在碳纳米管的表面上。

公开(公告)号：US07511333B2

公开(公告)日：2009-03-31

申请号：US11246447

申请日：2005-10-06

申请人： Yue-Song He ,  Chung Wai Leung ,  Jin-Ho Kim ,  Kwok Kwok Ng

发明人： Yue-Song He ,  Chung Wai Leung ,  Jin-Ho Kim ,  Kwok Kwok Ng

IPC分类号： H01L27/115 ,  H01L29/66

CPC分类号： H01L29/42336 ,  G11C16/0458 ,  G11C16/0491 ,  H01L27/115 ,  H01L27/11521

摘要： A memory cell (110) has a plurality of floating gates (120L, 120R). The channel region (170) comprises a plurality of sub-regions (220L, 220R) adjacent to the respective floating gates, and a connection region (210) between the floating gates. The connection region has the same conductivity type as the source/drain regions (160) to increase the channel conductivity. Therefore, the floating gates can be brought closer together even though the inter-gate dielectric (144) becomes thick between the floating gates, weakening the control gate's (104) electrical field in the channel.

摘要翻译： 存储单元（110）具有多个浮动栅极（120L，120R）。 沟道区域（170）包括与相应浮动栅极相邻的多个子区域（220L，220R），以及浮置栅极之间的连接区域（210）。 连接区域具有与源极/漏极区域（160）相同的导电类型以增加沟道导电性。 因此，即使栅极间电介质（144）在浮置栅极之间变厚，削弱了沟道中的控制栅极（104）电场，浮动栅极也可以更靠近在一起。

公开(公告)号：US20070153175A1

公开(公告)日：2007-07-05

申请号：US11643499

申请日：2006-12-20

申请人： Sung-Soo Chang ,  Woo-Hyun Kim ,  Jin-Ho Kim

发明人： Sung-Soo Chang ,  Woo-Hyun Kim ,  Jin-Ho Kim

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133504 ,  G02F1/133514

摘要： A liquid crystal display device includes an array substrate having reflective and transmissive regions in a pixel region, wherein the array substrate includes a reflective electrode corresponding to the reflective region and a pixel electrode on a first substrate. A color filter substrate defines the reflective region and the transmissive region in the pixel region. The color filter substrate includes a color filter with first and second portions that correspond to the respective transmissive and reflective regions on a second substrate. The thickness of the second portion is less than a thickness of the first portion. The combined thickness of the scatter and the thickness of the second portion is greater than the thickness of the first portion; and a liquid crystal layer between the array and color filter substrates.

摘要翻译： 一种液晶显示装置，具备在像素区域具有反射和透射区域的阵列基板，其中阵列基板包括对应于反射区域的反射电极和在第一基板上的像素电极。 滤色器基板限定像素区域中的反射区域和透射区域。 滤色器基板包括滤色器，滤色器具有对应于第二基板上的相应透射和反射区域的第一和第二部分。 第二部分的厚度小于第一部分的厚度。 第二部分的散射和厚度的组合厚度大于第一部分的厚度; 以及阵列和滤色器基板之间的液晶层。

公开(公告)号：US20060292810A1

公开(公告)日：2006-12-28

申请号：US11448769

申请日：2006-06-08

申请人： Jung-Hun Seo ,  Hyun-Young Kim ,  Young-Wook Park ,  Jin-Gi Hong ,  Kun-Sang Park ,  Jin-Ho Kim ,  Kyung-Bum Koo

发明人： Jung-Hun Seo ,  Hyun-Young Kim ,  Young-Wook Park ,  Jin-Gi Hong ,  Kun-Sang Park ,  Jin-Ho Kim ,  Kyung-Bum Koo

IPC分类号： H01L21/20

CPC分类号： H01L28/91 ,  H01L21/28562 ,  H01L27/10817 ,  H01L27/10852

摘要： In methods of manufacturing capacitors, a first metal compound may be deposited on a substrate using first and second source gases. The first and the second source gases may be provided onto the substrate by a first flow rate ratio in which a deposition rate of the first metal compound by surface reaction between the source gases is higher than that by mass transfer between the source gases. A second metal compound may be deposited on the first metal compound and undesired materials may be removed by providing the source gases with a second flow rate ratio different from the first flow rate ratio. Depositing the first and the second metal compounds may be repeated to form a lower electrode. A dielectric layer and an upper electrode may be formed on the lower electrode. Accordingly, permeation of an etching liquid or gas may be reduced during an etching process.

摘要翻译： 在制造电容器的方法中，可以使用第一和第二源气体在基板上沉积第一金属化合物。 可以通过第一流量比将第一和第二源气体提供到基底上，其中通过源气体之间的表面反应使第一金属化合物的沉积速率高于源气体之间的质量传递的沉积速率。 可以将第二金属化合物沉积在第一金属化合物上，并且可以通过提供不同于第一流速比的第二流量比来提供源气体来除去不需要的物质。 可以重复沉积第一和第二金属化合物以形成下电极。 电介质层和上电极可以形成在下电极上。 因此，在蚀刻过程中可能会减少蚀刻液体或气体的渗透。

公开(公告)号：US20050227437A1

公开(公告)日：2005-10-13

申请号：US10821100

申请日：2004-04-07

申请人： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chunchieh Huang ,  Jin-Ho Kim ,  Vei-Han Chan ,  Chung Leung ,  Chia-Shun Hsiao ,  George Kovall ,  Steven Yang

发明人： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chunchieh Huang ,  Jin-Ho Kim ,  Vei-Han Chan ,  Chung Leung ,  Chia-Shun Hsiao ,  George Kovall ,  Steven Yang

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788

CPC分类号： H01L21/28273 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/7881

摘要： Conventional fabrication of sidewall oxide around an ONO-type memory cell stack usually produces Bird's Beak because prior to the fabrication, there is an exposed sidewall of the ONO-type memory cell stack that exposes side parts of a plurality of material layers respectively composed of different materials. Certain materials in the stack such as silicon nitrides are more difficult to oxidize than other materials in the stack such polysilicon. As a result oxidation does not proceed uniformly along the multi-layered height of the sidewall. The present disclosure shows how radical-based fabrication of sidewall dielectric can help to reduce the Bird's Beak formation. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse as deeply through already oxidized layers of the sidewall such as silicon oxide layers. As a result, a more uniform sidewall dielectric can be fabricated with more uniform breakdown voltages along it height.

摘要翻译： 通常在ONO型存储单元堆叠周围制造侧壁氧化物通常产生鸟喙，因为在制造之前，存在ONO型存储单元堆叠的暴露的侧壁，其暴露分别由不同的多个材料层组成的多个材料层的侧面部分 材料 堆叠中的某些材料如氮化硅比堆叠中的其它材料更难以氧化，这样的多晶硅。 结果，氧化不沿着侧壁的多层高度均匀地进行。 本公开显示了基于侧壁电介质的基于基础的制造有助于减少鸟喙形成。 更具体地，表明短寿命氧化剂（例如原子氧）能够更好地氧化难以氧化的材料如氮化硅，并且表明短寿命氧化剂交替地或另外不扩散为 深深地通过侧壁的已氧化层，例如氧化硅层。 结果，可以制造更均匀的侧壁电介质，沿其高度具有更均匀的击穿电压。

公开(公告)号：US06924542B2

公开(公告)日：2005-08-02

申请号：US10901948

申请日：2004-07-29

申请人： Hua Ji ,  Dong Jun Kim ,  Jin-Ho Kim ,  Chuck Jang

发明人： Hua Ji ,  Dong Jun Kim ,  Jin-Ho Kim ,  Chuck Jang

IPC分类号： H01L21/762 ,  H01L29/00 ,  H01L21/8238

CPC分类号： H01L21/76229

摘要： A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.