公开(公告)号：US06924542B2

公开(公告)日：2005-08-02

申请号：US10901948

申请日：2004-07-29

申请人： Hua Ji ,  Dong Jun Kim ,  Jin-Ho Kim ,  Chuck Jang

发明人： Hua Ji ,  Dong Jun Kim ,  Jin-Ho Kim ,  Chuck Jang

IPC分类号： H01L21/762 ,  H01L29/00 ,  H01L21/8238

CPC分类号： H01L21/76229

摘要： A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

公开(公告)号：US06787409B2

公开(公告)日：2004-09-07

申请号：US10305464

申请日：2002-11-26

申请人： Hua Ji ,  Dong Jun Kim ,  Jin-Ho Kim ,  Chuck Jang

发明人： Hua Ji ,  Dong Jun Kim ,  Jin-Ho Kim ,  Chuck Jang

IPC分类号： H01L218238

CPC分类号： H01L21/76229

摘要： A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

摘要翻译： 提供了一种形成没有沟槽氧化物开槽的浅沟槽隔离区的方法和结构。 特别地，一种方法包括两步氧化法，其中氧化物衬垫在沟槽的内表面上划线，并且沟槽填充有本体氧化物层，优选使用高密度等离子体化学气相沉积（HDP-CVD）工艺 。 氧化物衬垫和本体氧化物层被形成为具有相似的蚀刻速率。 因此，当在堆叠结构之间蚀刻氧化物衬垫和本体氧化物层时，形成基本平坦且没有凹槽的公共电介质顶表面。

公开(公告)号：US20100317868A1

公开(公告)日：2010-12-16

申请号：US12517980

申请日：2007-11-20

申请人： Nam Du Kim ,  Wooseob Shin ,  Jaehyuk Jung ,  Dong Jun Kim ,  Gi Jeong Kim ,  Young Ho Moon ,  Young-Kil Chang ,  Gwan Sun Lee ,  Tae Jin Choi

发明人： Nam Du Kim ,  Wooseob Shin ,  Jaehyuk Jung ,  Dong Jun Kim ,  Gi Jeong Kim ,  Young Ho Moon ,  Young-Kil Chang ,  Gwan Sun Lee ,  Tae Jin Choi

IPC分类号： C07D263/06 ,  C07D305/14

CPC分类号： C07D305/14 ,  Y02P20/55

摘要： The present invention relates to a novel method of preparing a taxane derivative having an anti-tumor and anti-leukemia activity, and intermediates used therein.

摘要翻译： 本发明涉及一种制备具有抗肿瘤和抗白血病活性的紫杉烷衍生物的新方法及其中使用的中间体。

公开(公告)号：US20100280543A1

公开(公告)日：2010-11-04

申请号：US12738478

申请日：2008-10-16

申请人： Dong Jun Kim ,  Jun Woo Park ,  Yung Ho Jo

发明人： Dong Jun Kim ,  Jun Woo Park ,  Yung Ho Jo

IPC分类号： A61B17/29 ,  A61B17/00

CPC分类号： A61B34/70 ,  A61B34/71 ,  A61B34/72 ,  A61B2017/00398 ,  A61B2017/2902 ,  A61B2017/2905 ,  A61B2017/2932 ,  A61B2017/2936

摘要： A laparoscopic surgical instrument includes a shaft and a head having a distal end to which a variety of surgical instruments are attached. The laparoscopic surgical instrument also includes a flexible joint installed between the shaft and the head; a longitudinal-driving unit including a longitudinal-driving wire connected with both longitudinal ends of the head and a longitudinal-driving roller turning the longitudinal-driving wire and a transverse-driving unit including a transverse-driving wire connected with both transverse ends of the head and a transverse-driving roller turning the transverse-driving wire. The longitudinal-driving unit turns the flexible joint in the longitudinal direction, the transverse-driving unit turns the flexible joint in the transverse direction, and the shaft has a small diameter.

摘要翻译： 腹腔镜手术器械包括轴和具有远端的头部，多个外科器械附接到该远端。 腹腔镜手术器械还包括安装在轴和头部之间的柔性接头; 纵向驱动单元，包括与头部的两个纵向端连接的纵向驱动线和转动纵向驱动线的纵向驱动辊;以及横向驱动单元，横向驱动单元包括横向驱动线，该横向驱动线与 头部和横向驱动辊转动横向驱动线。 纵向驱动单元沿纵向旋转柔性接头，横向驱动单元使柔性接头在横向上转动，并且轴具有小的直径。

公开(公告)号：US06864148B1

公开(公告)日：2005-03-08

申请号：US10655705

申请日：2003-09-05

申请人： Chia-Shun Hsiao ,  Dong Jun Kim

发明人： Chia-Shun Hsiao ,  Dong Jun Kim

IPC分类号： H01L21/311 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/423 ,  H01L21/76 ,  H01L21/31 ,  H01L21/3205

CPC分类号： H01L21/76232 ,  H01L21/31111 ,  H01L21/823481 ,  H01L29/42368

摘要： A method and structure are provided with reduced gate wrap around to advantageously control for threshold voltage and increase stability in semiconductor devices. A spacer is provided aligned to field dielectric layers to protect the dielectric layers during subsequent etch processes. The spacer is then removed prior to subsequently forming a part of a gate oxide layer and a gate conductor layer. Advantageously, the spacer protects the corner area o the field dielectric and also allows for enhanced thickness of the gate oxide near the corners.

公开(公告)号：US06326259B1

公开(公告)日：2001-12-04

申请号：US09852602

申请日：2001-05-10

申请人： Kyong Min Kim ,  Han Sang Song ,  Dong Jun Kim

发明人： Kyong Min Kim ,  Han Sang Song ,  Dong Jun Kim

IPC分类号： H01L218242

CPC分类号： H01L28/56 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/91

摘要： A method of manufacturing a capacitor in a semiconductor device uses a metal as an upper electrode and a lower electrode, and forms a dielectric film in a double structure of a titanium-containing tantalum oxide film and an amorphous tantalum oxide film. Therefore, the invention can secure a sufficient capacitance while improving an electrical characteristic of the capacitor.

摘要翻译： 在半导体器件中制造电容器的方法使用金属作为上部电极和下部电极，并且在含钛的钽氧化物膜和非晶形氧化钽膜的双重结构中形成电介质膜。 因此，本发明可以确保足够的电容，同时改善电容器的电特性。

公开(公告)号：US09105572B2

公开(公告)日：2015-08-11

申请号：US14203400

申请日：2014-03-10

申请人： Hiroyuki Kanaya ,  Dong Jun Kim ,  Sung Hoon Lee

发明人： Hiroyuki Kanaya ,  Dong Jun Kim ,  Sung Hoon Lee

IPC分类号： H01L27/00 ,  H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  G11C7/18

CPC分类号： H01L27/228 ,  G11C7/18 ,  G11C11/16 ,  G11C11/161 ,  H01L27/222 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory includes a cell transistor including a first source/drain diffusion layer and a second source/drain diffusion layer, a first contact on the first source/drain diffusion layer, a memory element on the first contact, and a second contact on the second source/drain diffusion layer, the second contact including a first plug on the second source/drain diffusion layer, and a second plug on the first plug.

摘要翻译： 根据一个实施例，磁存储器包括单元晶体管，其包括第一源极/漏极扩散层和第二源极/漏极扩散层，第一源极/漏极扩散层上的第一触点，第一触点上的存储元件，以及 在第二源/漏扩散层上的第二触点，第二触点包括在第二源极/漏极扩散层上的第一插头和第一插头上的第二插头。

公开(公告)号：US08702748B2

公开(公告)日：2014-04-22

申请号：US12738478

申请日：2008-10-16

申请人： Dong Jun Kim ,  Jun Woo Park ,  Yung Ho Jo

发明人： Dong Jun Kim ,  Jun Woo Park ,  Yung Ho Jo

IPC分类号： A61B17/00

CPC分类号： A61B34/70 ,  A61B34/71 ,  A61B34/72 ,  A61B2017/00398 ,  A61B2017/2902 ,  A61B2017/2905 ,  A61B2017/2932 ,  A61B2017/2936

摘要： A laparoscopic surgical instrument includes a shaft and a head having a distal end to which a variety of surgical instruments are attached. The laparoscopic surgical instrument also includes a flexible joint installed between the shaft and the head; a longitudinal-driving unit including a longitudinal-driving wire connected with both longitudinal ends of the head and a longitudinal-driving roller turning the longitudinal-driving wire and a transverse-driving unit including a transverse-driving wire connected with both transverse ends of the head and a transverse-driving roller turning the transverse-driving wire. The longitudinal-driving unit turns the flexible joint in the longitudinal direction, the transverse-driving unit turns the flexible joint in the transverse direction, and the shaft has a small diameter.

摘要翻译： 腹腔镜手术器械包括轴和具有远端的头部，多个外科器械附接到该远端。 腹腔镜手术器械还包括安装在轴和头部之间的柔性接头; 纵向驱动单元，包括与头部的两个纵向端连接的纵向驱动线和转动纵向驱动线的纵向驱动辊;以及横向驱动单元，横向驱动单元包括横向驱动线，该横向驱动线与 头部和横向驱动辊转动横向驱动线。 纵向驱动单元沿纵向旋转柔性接头，横向驱动单元使柔性接头在横向上转动，并且轴具有小的直径。

公开(公告)号：US08624026B2

公开(公告)日：2014-01-07

申请号：US13502260

申请日：2010-10-19

申请人： Nam Du Kim ,  Ji Yeon Chang ,  Dong Jun Kim ,  Hyun Seung Lee ,  Jae Hyuk Jung ,  Young Kil Chang ,  Gwan Sun Lee

发明人： Nam Du Kim ,  Ji Yeon Chang ,  Dong Jun Kim ,  Hyun Seung Lee ,  Jae Hyuk Jung ,  Young Kil Chang ,  Gwan Sun Lee

IPC分类号： C07D487/00

CPC分类号： A61K31/4985 ,  C07D487/04

摘要： Disclosed are a novel, simple and low-cost method for preparing sitagliptin of formula (I), as DPP-IV (dipeptidyl peptidase IV) inhibitor, which is useful in treating type 2 diabetes mellitus and key intermediates used in said preparation of sitagliptin:

摘要翻译： 公开了用于制备式（I）的西他列汀的新型，简单和低成本的方法，DPP-IV（二肽基肽酶IV）抑制剂，其可用于治疗所述西他列汀制备中使用的2型糖尿病和关键中间体：

公开(公告)号：US06410381B1

公开(公告)日：2002-06-25

申请号：US09867658

申请日：2001-05-31

申请人： Kyong Min Kim ,  Kyung Cheol Jeong ,  Han Sang Song ,  Dong Jun Kim

发明人： Kyong Min Kim ,  Kyung Cheol Jeong ,  Han Sang Song ,  Dong Jun Kim

IPC分类号： H01L218242

摘要： The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of depositing a cap oxide film on a semiconductor substrate, patterning the cap oxide film to expose a capacitor region of the semiconductor substrate, consecutively depositing an Ru film for a lower electrode on the patterned cap oxide film and the semiconductor substrate in in-situ according to a low pressure chemical vapor deposition(LPCVD) and a plasma enhanced chemical vapor deposition(PECVD), forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and removing the cap oxide film, forming an amorphous TaON film having a high dielectric constant on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.