公开(公告)号：US20160370705A1

公开(公告)日：2016-12-22

申请号：US15249989

申请日：2016-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh Chien ,  Shu-Hao Chang ,  Jui-Ching Wu ,  Tsung-Yu Chen ,  Tzu-Hsiang Chen ,  Ming-Chin Chien ,  Chia-Chen Chen ,  Jeng-Horng Chen

IPC: G03F7/20 ,  G02B7/182 ,  G21K1/06 ,  G02B5/08

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/1821 ,  G03F7/2008 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G03F7/70925 ,  G21K1/067

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

公开(公告)号：US09429858B2

公开(公告)日：2016-08-30

申请号：US14035268

申请日：2013-09-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh Chien ,  Shu-Hao Chang ,  Jui-Ching Wu ,  Tsung-Yu Chen ,  Tzu-Hsiang Chen ,  Ming-Chin Chien ,  Chia-Chen Chen ,  Jeng-Horng Chen

IPC: G03F7/20

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/1821 ,  G03F7/2008 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G03F7/70925 ,  G21K1/067

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract translation: EUV收集器在EUV光刻系统的操作期间或之间旋转。 旋转EUV收集器导致污染物更均匀地分布在收集器的表面上。 这降低了EUV光刻系统随着污染增加而失去图像保真度并从而增加了集电器寿命的速率。 在EUV光刻系统运行期间旋转收集器可以引起对流并降低污染率。 通过以足够的速度旋转收集器，可以通过离心力的作用去除一些污染的碎屑。

公开(公告)号：US09046776B2

公开(公告)日：2015-06-02

申请号：US13758114

申请日：2013-02-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Hsu ,  Chia-Chen Chen ,  Jui-Ching Wu ,  Shang-Chieh Chien ,  Chia-Jen Chen ,  Chia-Ching Huang

IPC: G03F1/22 ,  G03F1/24 ,  G03F1/00

CPC classification number: H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract translation: 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。

公开(公告)号：US09034665B2

公开(公告)日：2015-05-19

申请号：US14051683

申请日：2013-10-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ching Huang ,  Tzu-Hsiang Chen ,  Chia-Hao Hsu ,  Chia-Chen Chen

IPC: G03F7/20 ,  G03F1/52 ,  H01L21/00 ,  G01N21/956

CPC classification number: G03F7/20 ,  G03F7/70191 ,  G03F7/70266 ,  G03F7/70291 ,  G03F7/70633 ,  G03F7/70783

Abstract: Some embodiments of the present disclosure relate to a tool configuration and method for EUV patterning with a deformable reflective surface comprising a mirror or reticle. A radiation source provides EUV radiation which is reflected off the deformable reflective surface to transfer a reticle pattern to a semiconductor workpiece. A metrology tool measures a residual vector formed between a first shape of the semiconductor workpiece and a second shape of the reticle pattern. And, a topology of the deformable reflective surface is changed based upon the residual vector to minimize a total magnitude of the residual vector.

Abstract translation: 本公开的一些实施例涉及用于EUV图案化的工具配置和方法，其具有包括反射镜或掩模版的可变形反射表面。 辐射源提供从可变形反射表面反射的EUV辐射，以将掩模版图案转印到半导体工件。 测量工具测量形成在半导体工件的第一形状和标线图案的第二形状之间的残余矢量。 并且，基于残差向量来改变可变形反射表面的拓扑，以最小化残差向量的总大小。

公开(公告)号：US09003337B2

公开(公告)日：2015-04-07

申请号：US13671581

申请日：2012-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Hsu ,  Pei-Cheng Hsu ,  Chia-Ching Huang ,  Chih-Ming Chen ,  Chia-Chen Chen

IPC: G06F17/50 ,  H01L21/02 ,  G03F1/00

CPC classification number: H01L22/12 ,  G03F1/00 ,  G06F17/5068 ,  H01L21/02697 ,  H01L21/31144 ,  H01L21/32051 ,  H01L21/3212 ,  H01L21/32133

Abstract: A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.

Abstract translation: 一种在半导体工艺中补偿局部焦点误差的系统和方法。 该方法包括提供掩模版并且在掩模版的第一部分处施加基于与掩模版的第一部分对应的晶片的第一部分的估计局部聚焦误差的台阶高度。 在掩模版上形成多层涂层，并在多层涂层上形成吸收层。 在吸收层上形成光致抗蚀剂。 对光致抗蚀剂进行图案化，对吸收层进行蚀刻并除去残留的光致抗蚀剂。