中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

120 records (took 0.03 seconds)

    Vacuum wafer chuck for manufacturing semiconductor devices
    31.
    发明授权
    Vacuum wafer chuck for manufacturing semiconductor devices 有权

    公开(公告)号：US12191185B2

    公开(公告)日：2025-01-07

    申请号：US17883589

    申请日：2022-08-08

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chien-Fa Lee ,  Chin-Lin Chou ,  Shang-Ying Tsai ,  Shou-Wen Kuo ,  Kuei-Sung Chang ,  Jiun-Rong Pai ,  Hsu-Shui Liu ,  Chun-Wen Cheng

    IPC: H01L21/683 ,  B25B11/00

    Abstract: Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.

    Stacked Semiconductor Structure and Method of Forming the Same
    33.
    发明申请
    Stacked Semiconductor Structure and Method of Forming the Same 有权

    公开(公告)号：US20220380208A1

    公开(公告)日：2022-12-01

    申请号：US17884946

    申请日：2022-08-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.,

    Inventor： Chia-Hua Chu ,  Chun-Wen Cheng

    IPC: B81C1/00

    Abstract: A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.

    MEMS MICROPHONE HAVING DIAPHRAGM
    37.
    发明申请
    MEMS MICROPHONE HAVING DIAPHRAGM 审中-公开

    公开(公告)号：US20190394573A1

    公开(公告)日：2019-12-26

    申请号：US16016996

    申请日：2018-06-25

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Chun Yin Tsai

    IPC: H04R19/04 ,  H04R19/00 ,  H04R31/00

    Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.

    Backside sensing BioFET with enhanced performance
    38.
    发明授权
    Backside sensing BioFET with enhanced performance 有权

    公开(公告)号：US10184912B2

    公开(公告)日：2019-01-22

    申请号：US15958053

    申请日：2018-04-20

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Yi-Shao Liu ,  Fei-Lung Lai ,  Wei-Cheng Lin ,  Ta-Chuan Liao ,  Chien-Kuo Yang

    IPC: G01N27/414

    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

    Semiconductor structure for MEMS Device
    39.
    发明授权
    Semiconductor structure for MEMS Device 有权

    公开(公告)号：US10160639B2

    公开(公告)日：2018-12-25

    申请号：US15193410

    申请日：2016-06-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Chun-Wen Cheng ,  Jung-Huei Peng

    IPC: H01L29/84 ,  B81C1/00

    Abstract: The present disclosure relates to a semiconductor structure for a MEMS device. In some embodiments, the structure includes an interlayer dielectric (ILD) region positioned over a substrate. Further the structure includes an inter-metal dielectric region. The IMD region includes a passivation layer overlying a stacked structure. The stacked structure includes dielectric layers and etch stop layers that are stacked in an alternating fashion. Metal wire layers are disposed within the stacked structure of the IMD region. The structure also includes a sensing electrode electrically connected to the IMD region with an electrode extension via. The structure includes a MEMS substrate comprising a MEMS device having a soft mechanical structure positioned adjacent to the sensing electrode.

Patent Agency Ranking