公开(公告)号：US11289494B2

公开(公告)日：2022-03-29

申请号：US16913061

申请日：2020-06-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Ching ,  Ka-Hing Fung ,  Chih-Sheng Chang ,  Zhiqiang Wu

IPC分类号： H01L27/11 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/033 ,  H01L21/324 ,  H01L27/092 ,  H01L29/161 ,  H01L29/165 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51

摘要： A method includes providing a substrate having an n-type fin-like field-effect transistor (NFET) region and forming a fin structure in the NFET region. The fin structure includes a first layer having a first semiconductor material, and a second layer under the first layer and having a second semiconductor material different from the first semiconductor material. The method further includes forming a patterned hard mask to fully expose the fin structure in gate regions of the NFET region and partially expose the fin structure in at least one source/drain (S/D) region of the NFET region. The method further includes oxidizing the fin structure not covered by the patterned hard mask, wherein the second layer is oxidized at a faster rate than the first layer. The method further includes forming an S/D feature over the at least one S/D region of the NFET region.

公开(公告)号：US20210202743A1

公开(公告)日：2021-07-01

申请号：US17197319

申请日：2021-03-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Chiang ,  Ka-Hing Fung ,  Chih-Sheng Chang ,  Zhiqiang Wu

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/06 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51 ,  H01L21/762 ,  H01L21/02

摘要： Methods are disclosed herein for forming fin-like field effect transistors (FinFETs) that maximize strain in channel regions of the FinFETs. An exemplary method includes forming a fin having a first width over a substrate. The fin includes a first semiconductor material, a second semiconductor material disposed over the first semiconductor material, and a third semiconductor material disposed over the second semiconductor material. A portion of the second semiconductor material is oxidized, thereby forming a second semiconductor oxide material. The third semiconductor material is trimmed to reduce a width of the third semiconductor material from the first width to a second width. The method further includes forming an isolation feature adjacent to the fin. The method further includes forming a gate structure over a portion of the fin, such that the gate structure is disposed between source/drain regions of the fin.

公开(公告)号：US20200328219A1

公开(公告)日：2020-10-15

申请号：US16913061

申请日：2020-06-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Ching ,  Ka-Hing Fung ,  Chih-Sheng Chang ,  Zhiqiang Wu

IPC分类号： H01L27/11 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/033 ,  H01L21/324 ,  H01L27/092 ,  H01L29/161 ,  H01L29/165 ,  H01L29/49 ,  H01L29/66

摘要： A method includes providing a substrate having an n-type fin-like field-effect transistor (NFET) region and forming a fin structure in the NFET region. The fin structure includes a first layer having a first semiconductor material, and a second layer under the first layer and having a second semiconductor material different from the first semiconductor material. The method further includes forming a patterned hard mask to fully expose the fin structure in gate regions of the NFET region and partially expose the fin structure in at least one source/drain (S/D) region of the NFET region. The method further includes oxidizing the fin structure not covered by the patterned hard mask, wherein the second layer is oxidized at a faster rate than the first layer. The method further includes forming an S/D feature over the at least one S/D region of the NFET region.

公开(公告)号：US20190123050A1

公开(公告)日：2019-04-25

申请号：US16217113

申请日：2018-12-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Ching ,  Ka-Hing Fung ,  Chih-Sheng Chang ,  Zhiqiang Wu

IPC分类号： H01L27/092 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L29/161 ,  H01L29/165 ,  H01L29/16 ,  H01L21/311 ,  H01L21/306 ,  H01L29/78 ,  H01L29/167

CPC分类号： H01L27/0924 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L27/0922 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

摘要： The present disclosure describes a fin-like field-effect transistor (FinFET). The device includes one or more fin structures over a substrate, each with source/drain (S/D) features and a high-k/metal gate (HK/MG). A first HK/MG in a first gate region wraps over an upper portion of a first fin structure, the first fin structure including an epitaxial silicon (Si) layer as its upper portion and an epitaxial growth silicon germanium (SiGe), with a silicon germanium oxide (SiGeO) feature at its outer layer, as its middle portion, and the substrate as its bottom portion. A second HK/MG in a second gate region, wraps over an upper portion of a second fin structure, the second fin structure including an epitaxial SiGe layer as its upper portion, an epitaxial Si layer as it upper middle portion, an epitaxial SiGe layer as its lower middle portion, and the substrate as its bottom portion.

公开(公告)号：US10090205B2

公开(公告)日：2018-10-02

申请号：US15018175

申请日：2016-02-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ka-Hing Fung

IPC分类号： H01L21/8238 ,  H01L29/78 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66

摘要： A finFET semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a first fin formed in a first semiconducting layer, a second fin formed in a second semiconducting layer, and an insulating layer disposed between the first fin and the second fin. The first fin, the second fin, and the insulating layer form a stacked structure above a substrate.

公开(公告)号：US20180012989A1

公开(公告)日：2018-01-11

申请号：US15699226

申请日：2017-09-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Ching ,  Ka-Hing Fung ,  Zhiqiang Wu

IPC分类号： H01L29/78 ,  H01L29/165 ,  H01L29/66 ,  H01L29/06

CPC分类号： H01L29/785 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848

摘要： A device includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate. A semiconductor fin is between opposite portions of the isolation regions, wherein the semiconductor fin is over top surfaces of the isolation regions. A gate stack overlaps the semiconductor fin. A source/drain region is on a side of the gate stack and connected to the semiconductor fin. The source/drain region includes an inner portion thinner than the semiconductor fin, and an outer portion outside the inner portion. The semiconductor fin and the inner portion of the source/drain region have a same composition of group IV semiconductors.

公开(公告)号：US20170373066A1

公开(公告)日：2017-12-28

申请号：US15700377

申请日：2017-09-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Ching ,  Ka-Hing Fung ,  Chih-Sheng Chang ,  Zhiqiang Wu

IPC分类号： H01L27/092 ,  H01L21/02 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L29/165 ,  H01L29/161 ,  H01L29/16 ,  H01L21/8238 ,  H01L21/311 ,  H01L21/306 ,  H01L29/78 ,  H01L29/167 ,  H01L29/06

CPC分类号： H01L27/0924 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L27/0922 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66803 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

摘要： The present disclosure describes a fin-like field-effect transistor (FinFET). The device includes one or more fin structures over a substrate, each with source/drain (S/D) features and a high-k/metal gate (HK/MG). A first HK/MG in a first gate region wraps over an upper portion of a first fin structure, the first fin structure including an epitaxial silicon (Si) layer as its upper portion and an epitaxial growth silicon germanium (SiGe), with a silicon germanium oxide (SiGeO) feature at its outer layer, as its middle portion, and the substrate as its bottom portion. A second HK/MG in a second gate region, wraps over an upper portion of a second fin structure, the second fin structure including an epitaxial SiGe layer as its upper portion, an epitaxial Si layer as it upper middle portion, an epitaxial SiGe layer as its lower middle portion, and the substrate as its bottom portion.

公开(公告)号：US09761586B2

公开(公告)日：2017-09-12

申请号：US15256313

申请日：2016-09-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Ching ,  Ka-Hing Fung ,  Chih-Sheng Chang ,  Zhiqiang Wu

IPC分类号： H01L29/76 ,  H01L27/092 ,  H01L29/16 ,  H01L29/165 ,  H01L29/161 ,  H01L29/49 ,  H01L29/51 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/306 ,  H01L21/311 ,  H01L29/78 ,  H01L29/167 ,  H01L29/06

CPC分类号： H01L27/0924 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L27/0922 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66803 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

摘要： The present disclosure describes a fin-like field-effect transistor (FinFET). The device includes one or more fin structures over a substrate, each with source/drain (S/D) features and a high-k/metal gate (HK/MG). A first HK/MG in a first gate region wraps over an upper portion of a first fin structure, the first fin structure including an epitaxial silicon (Si) layer as its upper portion and an epitaxial growth silicon germanium (SiGe), with a silicon germanium oxide (SiGeO) feature at its outer layer, as its middle portion, and the substrate as its bottom portion. A second HK/MG in a second gate region, wraps over an upper portion of a second fin structure, the second fin structure including an epitaxial SiGe layer as its upper portion, an epitaxial Si layer as it upper middle portion, an epitaxial SiGe layer as its lower middle portion, and the substrate as its bottom portion.

公开(公告)号：US09698058B2

公开(公告)日：2017-07-04

申请号：US14924422

申请日：2015-10-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Ching ,  Ka-Hing Fung ,  Chih-Sheng Chang ,  Zhiqiang Wu

IPC分类号： H01L21/8238 ,  H01L29/78 ,  H01L29/06 ,  H01L27/092 ,  H01L29/423 ,  H01L29/772 ,  H01L27/088 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L21/84 ,  H01L29/165

CPC分类号： H01L21/823821 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0603 ,  H01L29/0607 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/165 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/772 ,  H01L29/7831 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7855

摘要： The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having a first gate region, a first fin structure over the substrate in the first gate region. The first fin structure includes an upper semiconductor material member, a lower semiconductor material member, surrounded by an oxide feature and a liner wrapping around the oxide feature of the lower semiconductor material member, and extending upwards to wrap around a lower portion of the upper semiconductor material member. The device also includes a dielectric layer laterally proximate to an upper portion of the upper semiconductor material member. Therefore the upper semiconductor material member includes a middle portion that is neither laterally proximate to the dielectric layer nor wrapped by the liner.

公开(公告)号：US20160104776A1

公开(公告)日：2016-04-14

申请号：US14555128

申请日：2014-11-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Ching ,  Ka-Hing Fung ,  Zhiqiang Wu

IPC分类号： H01L29/10 ,  H01L29/167 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/266 ,  H01L27/088 ,  H01L29/16

CPC分类号： H01L29/1083 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/823892 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/66545

摘要： An embodiment semiconductor device includes a fin extending upwards from a semiconductor substrate. The fin includes an anti-punch through (APT) layer having APT dopants and a channel region over the APT layer. The channel region is substantially free of APT dopants. The semiconductor device further includes a conductive gate stack on a sidewall and a top surface of the channel region.

摘要翻译： 实施例半导体器件包括从半导体衬底向上延伸的鳍片。 翅片包括具有APT掺杂剂的抗穿透（APT）层和APT层上的沟道区。 通道区域基本上不含APT掺杂剂。 半导体器件还包括在沟道区域的侧壁和顶表面上的导电栅极堆叠。