公开(公告)号：US5423914A

公开(公告)日：1995-06-13

申请号：US335397

申请日：1994-11-03

申请人： Takao Nakamura ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Michitomo Iiyama

IPC分类号： C01G1/00 ,  C23C14/08 ,  C23C14/24 ,  C23C14/50 ,  C23C14/56 ,  C30B23/02 ,  C30B23/08 ,  C30B25/02 ,  H01L21/203 ,  H01L39/24

CPC分类号： C23C14/087 ,  C23C14/08 ,  C23C14/24 ,  C23C14/505 ,  C23C14/568 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2432 ,  Y10S505/732

摘要： The invention provides a film deposition apparatus comprising a vacuum chamber provided with a partitioning means for dividing the vacuum chamber into a first sub-chamber and a second sub-chamber, the partitioning means including an opening for introducing a vacuum conductance for molecular flows between the first sub-chamber and the second sub-chamber so that a pressure difference can be created between the first sub-chamber and the second sub-chamber even when the opening is open. A gate valve is provided on the partitioning means for hermetically closing the opening of the partitioning means so as to shut off the molecular flows between the first sub-chamber and the second sub-chamber. At least two evaporation source sets each comprising at least one K cell are provided in the vacuum chamber in communication with an internal space of the vacuum chamber and designed to deposit a thin film at different deposition positions in the second sub-chamber and a main evacuating means is coupled to the first sub-chamber for evacuating the first sub-chamber to an ultra high vacuum. A rotatable sample holder is located within the second sub-chamber having at least two heads for holding substrate to be deposited so as to face different directions, the sample holder is rotatable so that the heads can be situated at the different deposition positions. The apparatus further comprises means for heating the substrates, a gas supplying means provided in the second sub-chamber so as to supply a predetermined gas to the second sub-chamber and an auxiliary evacuating means coupled to the second sub-chamber for evacuating the second sub-chamber to an ultra-high vacuum even when the gate valve is closed.

摘要翻译： 本发明提供了一种成膜装置，它包括一个真空室，该真空室设有分隔装置，用于将真空室分成第一子室和第二子室，该分隔装置包括一个用于在真空室之间引入分子流的真空电导的开口 第一子室和第二子室，使得即使当开口打开时也可以在第一子室和第二子室之间产生压力差。 在分隔装置上设有闸阀，用于密封分隔装置的开口，从而切断第一副室与第二副室之间的分子流。 在真空室中设置至少两个包括至少一个K电池的蒸发源组，其与真空室的内部空间连通，并设计成在第二子室中的不同沉积位置沉积薄膜，并且主抽真空 装置联接到第一子室，用于将第一子室抽空至超高真空。 可旋转的样品保持器位于第二子室内，具有至少两个用于保持待沉积的基板朝向不同方向的头，样品保持器可旋转，使得头可以位于不同的沉积位置。 该装置还包括用于加热基板的装置，设置在第二子室中以便向第二子室提供预定气体的气体供给装置和联接到第二子室的辅助抽空装置，用于将第二 即使当闸阀关闭时，也将其分成超高真空。

公开(公告)号：US5422490A

公开(公告)日：1995-06-06

申请号：US83035

申请日：1993-06-29

申请人： Takao Nakamura ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Michitomo Iiyama

IPC分类号： H01J37/147 ,  H01J37/20 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317

CPC分类号： H01J37/1474 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3178

摘要： A focused ion beam implantation apparatus comprises a vacuum chamber, an ion source generating an ion beam, a means for accelerating the ion beam, a means for eliminating unwanted ion species in the ion beam, and a means for focusing the ion beam on a target. The apparatus further includes a means for scanning the ion beam relative to the target and means for inclining the ion beam relative to the target.

摘要翻译： 聚焦离子束注入装置包括真空室，产生离子束的离子源，用于加速离子束的装置，用于消除离子束中不需要的离子种类的装置，以及用于将离子束聚焦在靶上的装置 。 该装置还包括用于相对于目标扫描离子束的装置和用于相对于目标倾斜离子束的装置。

公开(公告)号：US5407903A

公开(公告)日：1995-04-18

申请号：US766184

申请日：1991-09-27

申请人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

IPC分类号： H01L39/14 ,  H01L39/22 ,  H01B12/00

CPC分类号： H01L39/146 ,  Y10S505/701 ,  Y10S505/728

摘要： For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.

摘要翻译： 为了制造超导装置，在基板的主表面上形成具有非常薄的厚度的第一c轴取向的氧化物超导薄膜，并且在绝缘体的一部分上形成栅极绝缘体和栅电极的层叠结构 第一氧化物超导体薄膜。 使用栅电极作为掩模来生长a轴取向的氧化物超导体薄膜，使得在栅电极的两侧形成具有较厚厚度的第二和第三超导区域，与栅电极电隔离。 这样形成的超导器件可以用作超级FET。

公开(公告)号：US5236896A

公开(公告)日：1993-08-17

申请号：US771986

申请日：1991-10-08

申请人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

IPC分类号： H01L39/14

CPC分类号： H01L39/146 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/729 ,  Y10T29/413

摘要： A superconducting device includes a superconducting channel consituted of an oxide superconductor thin film formed on a substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode. A gate electrode is located through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The oxide superconductor thin film of the superconducting channel is formed of a c-axis oriented oxide superconductor crystal, and the oxide superconductor thin film of the superconductor source electrode and the superconductor drain electrode are formed of an a-axis oriented oxide superconductor crystal. The superconducting channel is continuous with the superconductor source electrode and the superconductor drain electrode.

公开(公告)号：US5202810A

公开(公告)日：1993-04-13

申请号：US513609

申请日：1990-04-24

申请人： Takao Nakamura ,  Nobuya Sekiyama ,  Masaki Ohura ,  Yoshiki Kato ,  Noriaki Okamoto ,  Masami Masuda

发明人： Takao Nakamura ,  Nobuya Sekiyama ,  Masaki Ohura ,  Yoshiki Kato ,  Noriaki Okamoto ,  Masami Masuda

IPC分类号： G11B5/82 ,  G11B5/84

CPC分类号： G11B5/8404 ,  G11B5/82 ,  Y10S428/90

摘要： A magnetic disk includes a non-magnetic substrate with a surface processed layer having fine irregularities formed at least on a main surface thereof, and at least thin film magnetic film and a protective film formed in that order on the non-magnetic substrate in such a manner that the fine irregularities are duplicated thereof. The surface of the surface processed layer of the non-magnetic substrate has protrusions whose surfaces are made flat and a configuration which exhibits a three-dimensional bearing curve in which the bearing ratio at a section taken at a depth from the top of the surface which corresponds to the portion of the top portion deformed by the head load during the contact start-stops drive is between 0.1% and 10%. The protrusions formed on the surface processed layer have a height ranging from several nm to several tens of nm. The bearing ratio is a value obtained at a depth of 5 to 10 nm from the top of the protrusions.

摘要翻译： 磁盘包括具有至少在其主表面上形成有细微凹凸的表面处理层的非磁性基板，以及至少在非磁性基板上形成的薄膜磁性膜和保护膜。 方式是细微的不规则被复制。 非磁性基板的表面处理层的表面具有突起，其表面是平坦的，并且具有三维轴承曲线的构造，其中在从表面的顶部开始的深度处截取的截面的轴承比 对应于在接触开始 - 停止期间头部负载变形的顶部的部分在0.1％和10％之间。 形成在表面处理层上的突起具有几nm至几十nm的高度。 轴承比是从突起的顶部开始的深度为5〜10nm的值。

公开(公告)号：US4177307A

公开(公告)日：1979-12-04

申请号：US883948

申请日：1978-03-06

申请人： Yukio Torii ,  Takao Nakamura

发明人： Yukio Torii ,  Takao Nakamura

IPC分类号： B01D53/86 ,  B01J35/04 ,  F01N3/28 ,  F16S5/00 ,  F23G7/07 ,  B32B3/12

CPC分类号： F01N3/2828 ,  B01D53/86 ,  B01J35/04 ,  F01N2330/06 ,  Y10T428/24149 ,  Y10T428/24744

摘要： Thermal shock resistant ceramic honeycomb structures in which the shape of the vertical cross-section of the honeycomb structure is elliptical, and the shape of the channels is quadrilateral, one group of the partitions of the channels being inclined against the long diameter direction of the ellipse-shaped honeycomb structure and another group of the partitions of the channels being parallel to or inclined against the short diameter direction, the two groups of partitions are being crossed to form the quadrilateral channels.

摘要翻译： 蜂窝结构体的垂直截面形状为椭圆形，通道形状为四边形的耐热冲击陶瓷蜂窝结构体，通道的一组隔壁相对于椭圆的长径方向倾斜 形状的蜂窝结构，另一组通道的隔板与短径方向平行或倾斜，两组隔板正交以形成四边形通道。

公开(公告)号：US4133755A

公开(公告)日：1979-01-09

申请号：US818650

申请日：1977-07-25

申请人： Ryohkichi Tarao ,  Kanji Kaku ,  Masaki Hayashi ,  Takao Nakamura ,  Shigeo Ohishi ,  Hajime Yamano

发明人： Ryohkichi Tarao ,  Kanji Kaku ,  Masaki Hayashi ,  Takao Nakamura ,  Shigeo Ohishi ,  Hajime Yamano

IPC分类号： B01J20/00 ,  B01J20/22 ,  C02F1/28 ,  C02B1/42 ,  B01J31/02 ,  C09K3/00

CPC分类号： B01J20/22 ,  B01J20/00 ,  C02F1/288

摘要： As an agent for removing heavy metals such as mercury from waste waters containing the same, a composition and granule based on the composition are provided. Also a method for preparing the granule is provided. The composition consists mainly of a dithiocarbamate bond-containing low molecular weight compound, amorphous silica and active carbon powder. The granule consists mainly of said composition and a vinyl acetate polymer resin as a binder. The method is carried out by kneading and extruding the composition of the granule together with a clay as an excipient. Treated water through said agent can pass the current very severe effluent standards.

摘要翻译： 作为从含有该金属的废水中去除重金属如汞的试剂，提供了基于该组合物的组合物和颗粒。 还提供了制备颗粒的方法。 该组合物主要由含二硫代氨基甲酸酯键的低分子量化合物，无定形二氧化硅和活性炭粉末组成。 颗粒主要由所述组合物和作为粘合剂的乙酸乙烯酯聚合物树脂组成。 该方法通过将颗粒的组合物与作为赋形剂的粘土一起捏合和挤出来进行。 通过所述试剂处理的水可以通过目前非常严格的污水标准。

公开(公告)号：US09004673B2

公开(公告)日：2015-04-14

申请号：US13297701

申请日：2011-11-16

申请人： Keisei Hakamata ,  Hiroyuki Saito ,  Takao Nakamura

发明人： Keisei Hakamata ,  Hiroyuki Saito ,  Takao Nakamura

IPC分类号： B41J11/42 ,  B41J11/48 ,  B41J13/076

CPC分类号： B41J11/485 ,  B41J13/076

摘要： This invention includes an input operation unit which accepts the operation of selecting a first or a second printing medium and outputs information indicating the selected printing medium, a conveyance path, a conveyance mechanism which conveys the selected printing medium in the conveyance direction, and a control unit. The conveyance mechanism includes a main roller, a driven roller which presses the main roller through the selected printing medium, a rotation member having a cam shape, and an elastic member which deforms to change a pressing force in accordance with the rotational position of the rotation member. The control unit rotates the rotation member to the first rotational position when the first printing medium is selected, and rotates the rotation member to the second rotational position where the pressing force becomes smaller than that at the first rotational position when the second printing medium is selected.

摘要翻译： 本发明包括输入操作单元，其接受选择第一或第二打印介质的操作并输出指示所选择的打印介质的信息，输送路径，在输送方向上传送所选择的打印介质的输送机构，以及控制 单元。 传送机构包括：主辊，通过所选择的打印介质按压主辊的从动辊，具有凸轮形状的旋转构件，以及根据旋转的旋转位置变形以改变按压力的弹性构件 会员。 当选择第一打印介质时，控制单元将旋转构件旋转到第一旋转位置，并且当选择第二打印介质时，将旋转构件旋转到第二旋转位置，在第二旋转位置处按压力变得小于在第一旋转位置处的按压力 。

公开(公告)号：US08561400B2

公开(公告)日：2013-10-22

申请号：US13060405

申请日：2008-11-04

申请人： Takao Nakamura ,  Akihiro Yamanaka ,  Hiroshi Yukutomo ,  Kenji Fujii

发明人： Takao Nakamura ,  Akihiro Yamanaka ,  Hiroshi Yukutomo ,  Kenji Fujii

IPC分类号： F15B13/044

CPC分类号： B22D17/32 ,  Y10T137/87249

摘要： A hydraulic circuit of an injection cylinder in a die-casting apparatus, which can achieve IN restriction and OUT restriction in a quickly switchable manner with a single circuit and which allows manufacturing of a high-quality molded product. The hydraulic circuit includes: a first pressure oil path supplying pressure oil to the injection cylinder; a second pressure oil path returning the pressure oil from the injection cylinder; a first flow control valve controlling a flow of the pressure oil through the first pressure oil path; a second flow control valve controlling a flow of the pressure oil through the second pressure oil path; a bypass pressure oil path connected to the second pressure oil path for bypassing the second flow control valve; a bypass on-off valve provided on the bypass pressure oil path and opening/closing the bypass pressure oil path with the pressure oil; and a controller controlling each valve.

摘要翻译： 压铸装置中的注射缸的液压回路，其能够通过单个回路以快速切换的方式实现IN限制和OUT限制，并且允许制造高品质的模制产品。 液压回路包括：向注射缸供给压力油的第一压力油路; 第二压力油路将来自注射缸的压力油返回; 控制压力油通过第一压力油路的流量的第一流量控制阀; 控制压力油通过第二压力油路的流量的第二流量控制阀; 连接到所述第二压力油路以绕过所述第二流量控制阀的旁路压力油路; 设置在旁通压力油路上的旁通开闭阀，并且用压力油打开/关闭旁路压力油路; 以及控制每个阀门的控制器。

公开(公告)号：US08513645B2

公开(公告)日：2013-08-20

申请号：US12532077

申请日：2008-02-20

申请人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L29/12

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  C30B29/403 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/16 ,  H01S5/0201 ,  H01S5/34333

摘要： A source gas flows through a flow channel 23 of a metal-organic vapor phase epitaxy reactor 21. The source gas is fed in a direction across a main surface 25a of a susceptor 25. GaN substrates 27a to 27c are placed on the susceptor main surface 25a. An off-angle monotonically varies on a line segment extending from one point on the edges of the main surfaces of the gallium nitride substrates 27a to 27c to another point on the edges. The orientations of the GaN substrates 27a to 27c are represented by the orientations of the orientation flats. By placing the plurality of gallium nitride substrates 27a to 27c on the susceptors 25 of the metal-organic vapor phase epitaxy reactor 21 in these orientations, the influence of the off-angle distribution can be reduced by using the influence originated from the flow of the source gas.

摘要翻译： 源气体流过金属 - 有机气相外延反应器21的流动通道23.源气体沿着穿过基座25的主表面25a的方向进给。将GaN衬底27a至27c放置在基座主表面 25a。 在从氮化镓衬底27a至27c的主表面的边缘上的一个点延伸到边缘上的另一个点的线段上，偏角单调变化。 GaN衬底27a至27c的取向由取向平面的取向表示。 通过将这些取向中的多个氮化镓基板27a〜27c配置在金属 - 有机气相外延反应器21的基座25上，可以通过使用源自该流动的影响来减小偏角分布的影响 源气。