公开(公告)号：US06545331B1

公开(公告)日：2003-04-08

申请号：US09722041

申请日：2000-11-27

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： H01L3100

CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14687

摘要： Disclosed is a solid state imaging device, comprising: a photodetection diode; and an insulated gate field effect transistor provided adjacent to the photodetection diode for optical signal detection. In this case, a carrier pocket is provided in a second well region, and an element isolation insulating film is formed to isolate adjacent unit pixels from each other. In addition, an element isolation region of an opposite conductivity type is formed to isolate a second semiconductor layer of one conductivity type in such a way as to include the lower surface of the element isolation insulating film and reach a first semiconductor layer.

摘要翻译： 公开了一种固态成像装置，包括：光电检测二极管; 以及与用于光信号检测的光检测二极管相邻设置的绝缘栅场效应晶体管。 在这种情况下，在第二阱区域中设置载流子袋，并且形成元件隔离绝缘膜以隔离相邻的单位像素。 此外，形成相反导电类型的元件隔离区以隔离一个导电类型的第二半导体层，以便包括元件隔离绝缘膜的下表面并到达第一半导体层。

公开(公告)号：US06512547B1

公开(公告)日：2003-01-28

申请号：US09441667

申请日：1999-11-17

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： H04N314

CPC分类号： H04N5/35518 ,  H01L27/14609 ,  H01L27/14679

摘要： The present invention is a method for detecting photo signals using an imaging device, comprising steps of photo-generating holes in a well region 15 of a photo-diode by a signal light, transferring the photo-generated holes through a bulk of the well region 15 to a heavily doped buried layer 25 which is formed in the well region 15 near a source region 16 by doping that region with impurity heavier than the well region (15) of an insulated gate FET, storing the photo-generated holes in the heavily doped buried layer 25 to thereby change the threshold of the FET corresponding to the amount of the photo-generated charge, and reading the change in the threshold as the amount of signal light received by the photo-sensor.

摘要翻译： 本发明是一种使用成像装置检测光信号的方法，包括以下步骤：通过信号光在光电二极管的阱区15中产生空穴，将光产生的空穴传送通过阱区的大部分 15到重掺杂掩埋层25，其通过掺杂具有比绝缘栅FET的阱区（15）重的杂质的区域形成在阱区15附近，在绝缘栅极FET中存储光生孔 掺杂掩埋层25，从而改变对应于光生电荷量的FET的阈值，并且读取阈值的变化作为光传感器接收的信号光量。

公开(公告)号：US06476371B2

公开(公告)日：2002-11-05

申请号：US09750791

申请日：2001-01-02

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： H01J4014

CPC分类号： H01L27/14609 ,  H01L27/14623 ,  H01L27/14643 ,  H04N5/374

摘要： Disclosed is a solid state imaging device, comprising a unit pixel 101 including a photo diode 111 and a MOS transistor 112 for optical signal detection provided with a high-density buried layer 25 for storing optically generated charges generated by light irradiation in the photo diode 111, a vertical scanning signal driving scanning circuit 102 for outputting a scanning signal to a gate electrode 19, and a voltage boost scanning circuit 108 for outputting a boosted voltage higher than a power source voltage to a source region 16. In this case, a boosted voltage is applied from the voltage boost scanning circuit 108 to the source region 16, and the optically generated charges stored in the high-density buried layer 25 are swept out from the high-density buried layer 25 by a source voltage and a gate voltage risen by the boosted voltage.

摘要翻译： 公开了一种固态成像装置，其包括单元像素101，其包括光电二极管111和用于光信号检测的MOS晶体管112，其具有用于存储光电二极管111中由光照射产生的光学产生的电荷的高密度掩埋层25 ，用于向栅极电极19输出扫描信号的垂直扫描信号驱动扫描电路102以及用于将高于电源电压的升压电压输出到源极区域16的升压扫描电路108.在这种情况下， 从升压扫描电路108向源极区域16施加电压，并且通过源极电压和栅极电压上升从高密度掩埋层25扫出存储在高密度掩埋层25中的光学产生的电荷 通过升压电压。

公开(公告)号：US06423958B1

公开(公告)日：2002-07-23

申请号：US09562010

申请日：2000-05-02

申请人： Seishi Okamoto ,  Takashi Miida

发明人： Seishi Okamoto ,  Takashi Miida

IPC分类号： H01L2700

CPC分类号： H01L27/14643 ,  H04N5/357 ,  H04N5/374

摘要： The solid state imaging device comprises a solid state imaging element for storing light generating charges in a high concentration buried layer under a channel, modulating a threshold voltage, and detecting a light signal, a signal output circuit 105 for outputting a difference voltage between a first source potential after light modulation and a second source potential before the light modulation, wherein the signal output circuit 105 stores the first source potential and the second source potential in a first line memory (Lms) and a second line memory (Lmn) each formed of an input capacitor which is connected to a source region of a light signal detecting insulated gate field effect transistor respectively and outputs a difference voltage (Vout=VoutS−VoutN) between the first source potential and the second source potential via switched capacitor circuits.

摘要翻译： 固态成像装置包括用于在通道下方的高浓度掩埋层中存储光产生电荷的固态成像元件，调制阈值电压和检测光信号;信号输出电路105，用于输出第一 在光调制之后的光源电位和在光调制之前的第二源电位，其中信号输出电路105将第一源电位和第二源电位存储在第一行存储器（Lms）和第二行存储器（Lmn）中，每一个由 输入电容器，分别连接到光信号检测绝缘栅场效应晶体管的源极区域，并通过开关电容电路输出第一源极电位和第二源极电位之间的差分电压（Vout = VoutS-VoutN）。

公开(公告)号：US5376992A

公开(公告)日：1994-12-27

申请号：US114394

申请日：1993-09-01

申请人： Jun Hasegawa ,  Takashi Miida ,  Katsuo Kawamura

发明人： Jun Hasegawa ,  Takashi Miida ,  Katsuo Kawamura

IPC分类号： G01J1/44 ,  G03B7/091 ,  G03B7/099 ,  G03B7/08

CPC分类号： G03B7/091

摘要： An output current of a photodiode is charged in a capacitor, and the voltage change of the capacitor is monitored by a plurality of comparators. The time required for the capacitor voltage to reach a predetermined value is counted by using a clock signal input unit for inputting a clock signal of a predetermined frequency, and a counter for counting an upper part of a number corresponding to a logarithm of a number of clocks of the clock signal generated after the integration start by a photoelectric conversion unit. The outputs of the comparators when the counter counts the upper part are latched, and the lower part of the number is supplied.

摘要翻译： 光电二极管的输出电流被充电到电容器中，电容器的电压变化被多个比较器监视。 通过使用用于输入预定频率的时钟信号的时钟信号输入单元计数电容器电压达到预定值所需的时间，以及用于计数对应于数量的对数的数字的上部的计数器 由光电转换单元在积分开始之后产生的时钟信号的时钟。 当计数器计数上部时，比较器的输出被锁存，并且提供数字的下半部分。

公开(公告)号：US5357310A

公开(公告)日：1994-10-18

申请号：US187136

申请日：1994-01-27

申请人： Kazuo Kawamura ,  Takashi Miida ,  Hiroshi Iwabuchi ,  Jun Hasegawa

发明人： Kazuo Kawamura ,  Takashi Miida ,  Hiroshi Iwabuchi ,  Jun Hasegawa

IPC分类号： G02B7/34 ,  G02B7/28 ,  G03B13/18 ,  G03B3/00 ,  G01C3/08 ,  G01J1/20

CPC分类号： G02B7/28

摘要： A pair of optical systems of the same characteristics are disposed spaced apart by a base line length in the direction perpendicular to an optical axis, to form a focal plane, on which a standard photosensor and a reference photosensor, each having a plurality of photosensor elements, are disposed. An image of an object is focused onto the standard and reference photosensors, to generate a standard optical signal and a reference optical signal which are compared with each other, while changing the phase of the reference optical signal relative to the phase of the standard optical signal to calculate correlation factors. A distance to the object is detected from a phase having an extreme value of the calculated correlation factors. If the calculated correlation factors are asymmetrical relative to the extreme value, one correlation factor change by a unit phase shift before the extreme value is subtracted from the other correlation factor change by the unit phase shift after the extreme value. The subtraction result is divided by a constant. The division result is added to the correlation factors at sampling points adjacent the extreme value on the side of the other correlation factor change. The addition results are used as the corrected correlation factors, to perform an interpolation calculation to obtain a phase having an extreme value of the corrected correlation factors.

摘要翻译： 具有相同特性的一对光学系统在垂直于光轴的方向上以基线长度隔开设置，以形成焦平面，标准光电传感器和参考光电传感器各自具有多个光传感元件 ，被处置。 将对象的图像聚焦到标准和参考光电传感器上，以便在相对于标准光信号的相位改变参考光信号的相位的同时产生相互比较的标准光信号和参考光信号 计算相关因子。 从具有所计算的相关因子的极值的相位检测距物体的距离。 如果所计算的相关因子相对于极值相对不对称，则在从极值之后的单位相移中，从另一个相关因子变化减去极值之前，通过单位相移的一个相关因子改变。 减法结果除以常数。 将除法结果加到邻近另一相关因子变化一侧的极值的采样点处的相关因子。 使用相加结果作为校正后的相关因子，进行插值运算，得到具有校正后的相关因子的极值的相位。

公开(公告)号：US5068738A

公开(公告)日：1991-11-26

申请号：US321851

申请日：1989-03-10

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： G03B13/36 ,  G02B7/28 ,  G02B7/34

CPC分类号： G02B7/34

摘要： A phase-difference detector for use with an auto-focus detecting apparatus of a camera, the detector is capable of performing an arithmetic correlation process for detecting a phase-difference at a high speed with high accuracy. This detector uses an analog correlation arithmetic device for carrying out an analog correlation arithmetic process which generates correlative values associated with a pair of analog electric signals outputted from a pair of optical sensors. An A/D converter converts the generated correlative values outputted from the analog correlation arithmetic device into digital signals. The correlation arithmetic operation is done by directly using the analog signals generated during a photoelectric conversion, and the correlative values obtained by this computation are converted into digital signals, thereby allowing the arithmetic process to be performed at a high speed. Also, since there is substantially no rounding error incidental to a digital correlation arithmetic process because the digital conversion takes place after the correlation process, highly accurate arithmetic results can be obtained.

摘要翻译： 一种与相机的自动对焦检测装置一起使用的相位差检测器，该检测器能够以高精度执行用于高速检测相位差的算术相关处理。 该检测器使用模拟相关运算装置来执行模拟相关运算处理，其产生与从一对光学传感器输出的一对模拟电信号相关联的相关值。 A / D转换器将从模拟相关运算装置输出的相关值转换为数字信号。 通过直接使用光电转换时产生的模拟信号进行相关算术运算，将通过该运算获得的相关值转换为数字信号，从而允许高速执行运算处理。 另外，由于在相关处理之后发生数字转换，所以基本上没有与数字相关运算处理相关的舍入误差，因此可以获得高精度的运算结果。

公开(公告)号：US4849619A

公开(公告)日：1989-07-18

申请号：US95493

申请日：1987-09-11

申请人： Takashi Miida ,  Ryuji Kondo ,  Jin Murayama ,  Masatoshi Tabei ,  Nozomu Ozaki

发明人： Takashi Miida ,  Ryuji Kondo ,  Jin Murayama ,  Masatoshi Tabei ,  Nozomu Ozaki

IPC分类号： G02B7/34

CPC分类号： G02B7/346

摘要： A phase difference detector of the type capable of distinguishing a focused state by detecting relative positions of a pair of optical images obtained from an object, comprises sensor means adapted to photoelectrically convert the pair of optical images and to output a first analog electrical signal corresponding to one of the optical images and a second analog electrical signal corresponding to the other optical image, the signals being generated by the photoelectric conversion, at a predetermined period and in a non-destructive manner, and analog arithmetic means for subjecting the pair of analog electrical signals output from the sensor means to a correlative arithmetic operation.

摘要翻译： 一种能够通过检测从物体获得的一对光学图像的相对位置来区分聚焦状态的相位差检测器，包括适于对该对光学图像进行光电转换的传感器装置，并输出对应于 光学图像中的一个和对应于另一光学图像的第二模拟电信号，信号是以预定的周期和非破坏性方式通过光电转换产生的，以及模拟计算装置，用于使一对模拟电气 从传感器装置输出的信号到相关算术运算。

公开(公告)号：US4716466A

公开(公告)日：1987-12-29

申请号：US738331

申请日：1985-05-28

申请人： Takashi Miida ,  Akira Takei ,  Kiyoshi Tashiro

发明人： Takashi Miida ,  Akira Takei ,  Kiyoshi Tashiro

IPC分类号： H01L21/339 ,  H01L27/148 ,  H01L29/76 ,  H01L29/762 ,  H01L29/772 ,  H04N3/14 ,  H04N5/235 ,  H04N5/335 ,  H04N5/353 ,  H04N5/355 ,  H04N5/372 ,  H04N5/378 ,  H01L29/78

CPC分类号： H04N5/2351 ,  H04N3/1575 ,  H04N5/2353

摘要： An image sensor includes charge storage regions which gradually store charges corresponding to the amount of light received, a plurality of image transfer elements which gradually transfer the charges, and transfer gates which transfer the charges in the charge storage regions to the charge transfer elements. The image sensor provides further a device which changes an electric potential of an electrode of the charge storage regions in accordance with the amount stored of the charges, and a device which detects the electric potential of the electrode and outputs the detected electric potential as a switchover timing control signal of the transfer gates.

摘要翻译： 图像传感器包括电荷存储区域，其逐渐地存储对应于接收的光量的电荷，逐渐转移电荷的多个图像传送元件，以及将电荷存储区域中的电荷转移到电荷转移元件的传输门。 图像传感器还提供根据存储的电荷量来改变电荷存储区域的电极的电位的装置，以及检测电极的电位并输出检测出的电位作为切换的装置 传输门的定时控制信号。

公开(公告)号：US20110310666A1

公开(公告)日：2011-12-22

申请号：US13203612

申请日：2009-04-30

申请人： Takashi Miida ,  Riichiro Shirota ,  Hideki Arakawa ,  Ching Sung Yang ,  Tzung Ling Lin

发明人： Takashi Miida ,  Riichiro Shirota ,  Hideki Arakawa ,  Ching Sung Yang ,  Tzung Ling Lin

IPC分类号： G11C16/10

CPC分类号： G11C16/3427 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/102 ,  G11C16/3418 ,  H01L27/11524 ,  H01L27/11526

摘要： In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.

摘要翻译： 在NAND闪速存储器件的编程方法中，使用自增强方案来消除否则会导致编程干扰的抑制单元串的通道中的多余电子。 在增强通道之前，通过对连接到禁止单元串的字线施加负电压来实现消除，并且这导致高程序抗扰性。 还描述了实现编程操作的行解码器电路和基于编程方案的文件系统架构以提高文件管理的效率。