公开(公告)号：US5286567A

公开(公告)日：1994-02-15

申请号：US912792

申请日：1992-07-13

申请人： Yoshihiro Kubota ,  Meguru Kashida ,  Yoshihiko Nagata ,  Hitoshi Noguchi

发明人： Yoshihiro Kubota ,  Meguru Kashida ,  Yoshihiko Nagata ,  Hitoshi Noguchi

IPC分类号： C08F214/06 ,  B29C35/08 ,  B29C59/16 ,  C08F34/00 ,  C08F214/26 ,  C08F234/02 ,  G03F1/40 ,  G03F1/62 ,  H01L21/027 ,  B32B27/00

CPC分类号： G03F1/62 ,  B29C59/16 ,  B29C2035/0827 ,  B29C2035/0838 ,  Y10T428/31544

摘要： A pellicle for dust-proofing of a photolithographic mask used for patterning in the manufacturing process of semiconductor devices. The drawback due to dust deposition can be greatly decreased in the use of a pellicle made from a fluorocarbon resin which is a copolymer of tetrafluoroethylene and another fluorocarbon monomer capable of introducing a cyclic perfluoroether group into the molecule when the pellicle film is rendered antistatically hydrophilic, for example, by a plasma treatment.

摘要翻译： 用于在半导体器件的制造过程中用于图案化的光刻掩模的防尘薄膜组件。 在使用由氟树脂制成的防护薄膜树脂时，由于粉尘沉积的缺点可以大大降低，因为当防护薄膜成为抗静电亲水性时，能够将环状全氟醚基团引入到分子中的四氟乙烯与另一氟碳单体的共聚物， 例如通过等离子体处理。

公开(公告)号：US5118573A

公开(公告)日：1992-06-02

申请号：US601659

申请日：1990-10-25

申请人： Yoshio Tawara ,  Katsushi Tokunaga ,  Tadao Nomura ,  Yoshiaki Shimizu ,  Yoshihiro Kubota ,  Meguru Kashida

发明人： Yoshio Tawara ,  Katsushi Tokunaga ,  Tadao Nomura ,  Yoshiaki Shimizu ,  Yoshihiro Kubota ,  Meguru Kashida

IPC分类号： G11B11/105

CPC分类号： G11B11/10586 ,  Y10S428/90

摘要： An improvement is obtained in the stability and recording density of a magneto-optical recording medium having a laminar structure on a transparent substrate plate successively consisting of a first dielectric layer, a magnetic recording layer, a second dielectric layer and a metallic light-reflecting layer by forming the dielectric layer with a unique and specific dielectric material which is an amorphous composite material comprising boron and hydrogen in a specified weight proportion formed by the method of plasma CVD or sputtering. The dielectric material can be a ternary composite of boron, hydrogen and nitrogen or quaternary composite of boron, hydrogen, nitrogen and silicon or carbon.

公开(公告)号：US5098515A

公开(公告)日：1992-03-24

申请号：US627270

申请日：1990-12-14

申请人： Meguru Kashida ,  Yoshihiro Kubota ,  Yoshihiko Nagata

发明人： Meguru Kashida ,  Yoshihiro Kubota ,  Yoshihiko Nagata

IPC分类号： G03F1/22 ,  G03F1/68 ,  H01L21/027

CPC分类号： G03F1/22

摘要： The inventive method provides a membrane for X-ray lithography compositely composed of silicon carbide and silicon nitride having high performance in respect of stability against high energy beam irradiation and transparency to visible light. The method comprises depositing a composite film of a specified SiC:Si.sub.3 N.sub.4 molar proportion by sputtering on a silicon wafer as the substrate under such conditions that the thus deposited film is under a compressively stressed state, annealing the substrate bearing the composite film deposited thereon at a specified temperature so as to bring the composite film under a tensile internal stress and then removing the substrate by etching leaving a frame portion.

公开(公告)号：US4395512A

公开(公告)日：1983-07-26

申请号：US381563

申请日：1982-05-24

申请人： Yoshihiro Kubota ,  Osamu Kuriyama

发明人： Yoshihiro Kubota ,  Osamu Kuriyama

IPC分类号： C08L27/14 ,  C08L1/00 ,  C08L27/00 ,  C08L27/12 ,  C08L27/16 ,  C08L81/00 ,  C08L81/02 ,  H05K1/03 ,  C08K3/10

CPC分类号： C08L81/02 ,  C08L27/12 ,  H05K1/0333 ,  H05K1/0373

摘要： The invention provides a novel resin composition based on a polyphenylenesulfide resin which can be molded into shaped articles imparted with remarkably improved impact strength, cracking resistance and heat shock resistance. The inventive resin composition comprises 100 parts by weight of a polyphenylenesulfide resin, from 10 to 300 parts by weight of an inorganic filler and from 1 to 100 parts by weight of a fluorine-containing rubber such as a copolymer of vinylidene fluoride and hexafluoropropylene having specified Mooney viscosity.

摘要翻译： 本发明提供了一种基于聚苯硫醚树脂的新型树脂组合物，其可以模塑成具有显着提高的冲击强度，抗裂性和耐热冲击性的成型制品。 本发明的树脂组合物包含100重量份的聚苯硫醚树脂，10-300重量份的无机填料和1至100重量份的含氟橡胶，例如具有规定的偏二氟乙烯和六氟丙烯的共聚物 门尼粘度。

公开(公告)号：US09064929B2

公开(公告)日：2015-06-23

申请号：US12153519

申请日：2008-05-20

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762 ,  H01L21/3065 ,  H01L21/66

CPC分类号： H01L21/76254 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/014

摘要： There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.

摘要翻译： 公开了一种用于制造SOI晶片的方法，包括：将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚，从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤，其中所述蚀刻步骤包括：执行粗蚀刻的阶段，如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布，进行干蚀刻的精确蚀刻的阶段。 可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。

公开(公告)号：US08765576B2

公开(公告)日：2014-07-01

申请号：US12550340

申请日：2009-08-28

申请人： Shoji Akiyama ,  Atsuo Ito ,  Yoshihiro Kubota ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Atsuo Ito ,  Yoshihiro Kubota ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/30 ,  H01L21/762 ,  H01L21/3105

CPC分类号： H01L21/76254 ,  H01L21/31051 ,  H01L21/76251 ,  H01L31/1892 ,  Y02E10/50

摘要： A method of manufacturing a laminated substrate is provided. The method includes: forming an oxide film on at least a surface of a first substrate having a hardness of equal to or more than 150 GPa in Young's modulus, and then smoothing the oxide film; implanting hydrogen ions or rare gas ions, or mixed gas ions thereof from a surface of a second substrate to form an ion-implanted layer inside the substrate, laminating the first substrate and the second substrate through at least the oxide film, and then detaching the second substrate in the ion-implanted layer to form a laminated substrate; heat-treating the laminated substrate and diffusing outwardly the oxide film.

摘要翻译： 提供一种制造叠层基板的方法。 该方法包括：在杨氏模量下，在硬度为150GPa以上的第一基板的至少表面形成氧化膜，然后平滑氧化膜; 从第二基板的表面注入氢离子或稀有气体离子或其混合气体离子以在基板内部形成离子注入层，至少通过氧化物膜层压第一基板和第二基板，然后将 在离子注入层中形成第二衬底以形成层压衬底; 对层压基板进行热处理并向外扩散氧化膜。

公开(公告)号：US08564108B2

公开(公告)日：2013-10-22

申请号：US13596736

申请日：2012-08-28

申请人： Tomoyuki Fukuda ,  Yoshihiro Kubota ,  Hiroshi Ohtsubo ,  Yuichi Asano

发明人： Tomoyuki Fukuda ,  Yoshihiro Kubota ,  Hiroshi Ohtsubo ,  Yuichi Asano

IPC分类号： H01L23/495

CPC分类号： H01L23/4334 ,  H01L21/561 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20752 ,  H01L2224/05599

摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

公开(公告)号：US08551862B2

公开(公告)日：2013-10-08

申请号：US12685194

申请日：2010-01-11

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L21/30

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L21/76256

摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.

摘要翻译： 为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合， 发生。 一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理 叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理 温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。

公开(公告)号：US08278743B2

公开(公告)日：2012-10-02

申请号：US13023962

申请日：2011-02-09

申请人： Tomoyuki Fukuda ,  Yoshihiro Kubota ,  Hiroshi Ohtsubo ,  Yuichi Asano

发明人： Tomoyuki Fukuda ,  Yoshihiro Kubota ,  Hiroshi Ohtsubo ,  Yuichi Asano

IPC分类号： H01L23/495

CPC分类号： H01L23/4334 ,  H01L21/561 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20752 ,  H01L2224/05599

摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

公开(公告)号：US20120228730A1

公开(公告)日：2012-09-13

申请号：US13476301

申请日：2012-05-21

申请人： Shoji AKIYAMA ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji AKIYAMA ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762 ,  H01L31/0248

CPC分类号： H01L21/76254 ,  H01L21/84

摘要： A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer.

摘要翻译： 对已经形成有离子注入层的单晶Si衬底和石英衬底的各个接合表面施加等离子体处理或臭氧处理，并将衬底接合在一起。 然后，对键合衬底施加冲击力，沿着氢离子注入层从单晶硅的主体部分剥离硅薄膜，从而获得在石英衬底上具有SOI层的SOI衬底。 在如此获得的SOI衬底的石英衬底的表面上形成诸如孔或微流通道的凹部，从而应用DNA芯片或微流体芯片所需的工艺。 在SOI层中形成用于分析/评价附着/保持在该凹部的样品的硅半导体元件。