Semiconductor device and manufacturing method of semiconductor device
    31.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号:US07851886B2

    公开(公告)日:2010-12-14

    申请号:US11812813

    申请日:2007-06-21

    IPC分类号: H01L29/06

    摘要: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

    摘要翻译: 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面,该绝缘层用作用于保护的衬底。 在半导体器件中,绝缘层形成在用作天线的导电层上,使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2,并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外,导电层而不是绝缘层不会在半导体器件的侧面露出,并且绝缘层覆盖TFT和导电层。 此外,在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

    Semiconductor device and manufacturing method of semiconductor device
    32.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号:US08039353B2

    公开(公告)日:2011-10-18

    申请号:US12854060

    申请日:2010-08-10

    摘要: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

    摘要翻译: 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面,该绝缘层用作用于保护的衬底。 在半导体器件中,绝缘层形成在用作天线的导电层上,使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2,并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外,导电层而不是绝缘层不会在半导体器件的侧面露出,并且绝缘层覆盖TFT和导电层。 此外,在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

    Semiconductor device and method of manufacturing semiconductor device
    34.
    发明授权
    Semiconductor device and method of manufacturing semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号:US08227886B2

    公开(公告)日:2012-07-24

    申请号:US12358449

    申请日:2009-01-23

    IPC分类号: H01L31/09

    摘要: An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface. The colors of the chromatic color light transmitting resin layers are different in each of the plurality of semiconductor integrated circuits.

    摘要翻译: 目的是通过半导体器件的外部应力来减少裂纹,裂纹和芯片的外观破损。 另一个目的是提高薄半导体器件的制造成品率。 半导体器件包括安装在插入器上的多个半导体集成电路。 所述多个半导体集成电路中的每一个都包括透光基板,所述透光基板在所述侧表面具有台阶,并且所述透光基板的一部分的宽度比所述透光基板的另一部分的宽度窄,当所述光 发送基板在包括该台阶的平面处被分割,包括设置在透光基板的一个表面上的光电转换元件的半导体元件层和覆盖透光基板的另一个表面的彩色透光树脂层和 侧面的一部分。 多色半导体集成电路中的彩色透光树脂层的颜色不同。

    Method for manufacturing semiconductor device
    37.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08153511B2

    公开(公告)日:2012-04-10

    申请号:US11420889

    申请日:2006-05-30

    IPC分类号: H01L21/00

    摘要: It is an object to improve a yield of a step of cutting off a substrate. A substrate is cut off by using an ablation process. An ablation process uses a phenomenon in which a molecular bond in a portion irradiated with a laser beam, that is, a portion which absorbs the laser beam is cut off, photodegraded, and evaporated. In other words, a substrate is irradiated with a laser beam, a molecular bond in a portion of the substrate is cut off, photodegraded, and evaporated; accordingly, a groove is formed in the substrate. A method for cutting the substrate has steps of selectively emitting a laser beam and forming a groove in the substrate, and selectively emitting a laser beam to the groove and cutting off the substrate. Methods for manufacturing a groove in a substrate and cutting off a substrate are used for manufacturing a semiconductor device.

    摘要翻译: 本发明的目的是提高切割基板的步骤的产量。 通过使用消融工艺来切断衬底。 消融处理使用这样的现象,其中用激光束照射的部分中的分子键即吸收激光束的部分被切断,光降解和蒸发。 换句话说,用激光束照射基板,将基板的一部分中的分子键切断,光降解并蒸发; 因此,在基板中形成槽。 用于切割基板的方法具有选择性地发射激光束并在基板中形成凹槽的步骤,并且选择性地将激光束发射到凹槽并切断基板。 用于制造衬底中的沟槽并切断衬底的方法用于制造半导体器件。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    38.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20060270195A1

    公开(公告)日:2006-11-30

    申请号:US11420889

    申请日:2006-05-30

    IPC分类号: H01L21/00

    摘要: It is an object to improve a yield of a step of cutting off a substrate. A substrate is cut off by using an ablation process. An ablation process uses a phenomenon in which a molecular bond in a portion irradiated with a laser beam, that is, a portion which absorbs the laser beam is cut off, photodegraded, and evaporated. In other words, a substrate is irradiated with a laser beam, a molecular bond in a portion of the substrate is cut off, photodegraded, and evaporated; accordingly, a groove is formed in the substrate. A method for cutting the substrate has steps of selectively emitting a laser beam and forming a groove in the substrate, and selectively emitting a laser beam to the groove and cutting off the substrate. Methods for manufacturing a groove in a substrate and cutting off a substrate are used for manufacturing a semiconductor device.

    摘要翻译: 本发明的目的是提高切割基板的步骤的产量。 通过使用消融工艺来切断衬底。 消融处理使用这样的现象,其中用激光束照射的部分中的分子键即吸收激光束的部分被切断,光降解和蒸发。 换句话说,用激光束照射基板,将基板的一部分中的分子键切断,光降解并蒸发; 因此,在基板中形成槽。 用于切割基板的方法具有选择性地发射激光束并在基板中形成凹槽的步骤,并且选择性地将激光束发射到凹槽并切断基板。 用于制造衬底中的沟槽并切断衬底的方法用于制造半导体器件。

    Pickup device and pickup method
    39.
    发明申请
    Pickup device and pickup method 有权
    拾取装置和拾取方法

    公开(公告)号:US20070069340A1

    公开(公告)日:2007-03-29

    申请号:US11524071

    申请日:2006-09-20

    IPC分类号: H01L29/40

    摘要: It is an object of the present invention to provide a device which can pick up a chip from an adhesive film while preventing damage to the chip. In addition, a device which can pick up a chip over an adhesive film with a high yield is provided. A pickup device includes: a frame for holding a film to which a chip is attached, which is fixed to a support; a pressing jig which presses a surface of the film, to which a chip is not attached, while rotated or moved; a holding jig which holds the chip simultaneously with or after the pressing jig pressing the film; and a moving unit which moves the holding jig.

    摘要翻译: 本发明的目的是提供一种能够从粘合膜拾取芯片同时防止损坏芯片的装置。 此外,提供了一种可以以高产率在粘合膜上拾取芯片的装置。 拾取装置包括:固定在支撑体上的用于保持安装了芯片的胶片的框架; 在旋转或移动的同时按压未安装芯片的膜的表面的按压夹具; 保持夹具,其与压制夹具同时或者在压制膜之后保持芯片; 以及使保持夹具移动的移动单元。

    Pickup device and pickup method
    40.
    发明授权
    Pickup device and pickup method 有权
    拾取装置和拾取方法

    公开(公告)号:US08137050B2

    公开(公告)日:2012-03-20

    申请号:US11524071

    申请日:2006-09-20

    IPC分类号: H01L29/40

    摘要: It is an object of the present invention to provide a device which can pick up a chip from an adhesive film while preventing damage to the chip. In addition, a device which can pick up a chip over an adhesive film with a high yield is provided. A pickup device includes: a frame for holding a film to which a chip is attached, which is fixed to a support; a pressing jig which presses a surface of the film, to which a chip is not attached, while rotated or moved; a holding jig which holds the chip simultaneously with or after the pressing jig pressing the film; and a moving unit which moves the holding jig.

    摘要翻译: 本发明的目的是提供一种能够从粘合膜拾取芯片同时防止损坏芯片的装置。 此外,提供了一种可以以高产率在粘合膜上拾取芯片的装置。 拾取装置包括:固定在支撑体上的用于保持安装了芯片的胶片的框架; 在旋转或移动的同时按压未安装芯片的膜的表面的按压夹具; 保持夹具,其与压制夹具同时或者在压制膜之后保持芯片; 以及使保持夹具移动的移动单元。